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SCT3017ALHRC11

SCT3017ALHRC11
Mfr. #:
SCT3017ALHRC11
제조사:
Rohm Semiconductor
설명:
MOSFET 650V 118A 427W SIC 17mOhm TO-247N
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SCT3017ALHRC11 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SCT3017ALHRC11 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
MOSFET
RoHS:
Y
기술:
SiC
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247N-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
118 A
Rds On - 드레인 소스 저항:
17 mOhms
Vgs th - 게이트 소스 임계 전압:
2.7 V
Vgs - 게이트 소스 전압:
- 4 V, 22 V
Qg - 게이트 차지:
172 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
427 W
구성:
하나의
채널 모드:
상승
포장:
튜브
시리즈:
SCT3x
트랜지스터 유형:
1 N-Channel
상표:
로옴 반도체
순방향 트랜스컨덕턴스 - 최소:
16 S
가을 시간:
31 ns
상품 유형:
MOSFET
상승 시간:
44 ns
공장 팩 수량:
30
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
64 ns
일반적인 켜기 지연 시간:
30 ns
Tags
SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
부분 # 제조 설명 재고 가격
SCT3017ALHRC11
DISTI # SCT3017ALHRC11-ND		ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 25:$96.1000
  • 10:$98.7880
  • 1:$104.1600
SCT3017ALHRC11
DISTI # 02AH4678		ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W,Transistor Polarity:N Channel,Continuous Drain Current Id:118A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 100:$83.5200
  • 50:$88.8600
  • 25:$90.1800
  • 10:$91.5300
  • 5:$94.2400
  • 1:$96.8400
SCT3017ALHRC11
DISTI # 755-SCT3017ALHRC11		ROHM SemiconductorMOSFET 650V 118A 427W SIC 17mOhm TO-247N
RoHS: Compliant		0
  • 1:$107.5200
  • 5:$105.5400
  • 10:$100.8000
  • 25:$96.1000
SCT3017ALHRC11
DISTI # TMOS2736		ROHM SemiconductorSiC N-CH 650V 118A 17mOhm
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$96.9300
SCT3017ALHRC11
DISTI # 3052180		ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W0
  • 10:£73.3200
  • 5:£77.6800
  • 1:£82.0300
SCT3017ALHRC11
DISTI # 3052180		ROHM SemiconductorMOSFET, N-CH, 650V, 118A, 175DEG C, 427W
RoHS: Compliant		0
  • 1:$146.5300
SCT3017ALHRC11ROHM SemiconductorMOSFET 650V 118A 427W SIC 17mOhm TO-247N
RoHS: Compliant		Americas -
    영상 부분 # 설명
    SCT3017ALHRC11

    Mfr.#: SCT3017ALHRC11

    OMO.#: OMO-SCT3017ALHRC11

    		 MOSFET 650V 118A 427W SIC 17mOhm TO-247N
    SCT3017ALGC11

    Mfr.#: SCT3017ALGC11

    OMO.#: OMO-SCT3017ALGC11-1190

    		 MOSFET, N-CH, 650V, 118A, 175DEG C, 427W, Transistor Polarity:N Channel, Continuous Drain Current Id:118A, Drain Source Voltage Vds:650V, On Resistance Rds(on):0.017ohm, Rds(on) Test Voltage Vgs:
    SCT3017ALHRC11

    Mfr.#: SCT3017ALHRC11

    OMO.#: OMO-SCT3017ALHRC11-ROHM-SEMI

    		 AUTOMOTIVE GRADE N-CHANNEL SIC P
    유효성
    재고:
    Available
    주문 시:
    4000
    수량 입력:
    SCT3017ALHRC11의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$107.52
    US$107.52
    5
    US$105.54
    US$527.70
    10
    US$100.80
    US$1 008.00
    25
    US$96.10
    US$2 402.50
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