2SC5245A-4-TL-E

Mfr. #:: 2SC5245A-4-TL-E
제조사:: ON Semiconductor
설명:: Bipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIER
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 2SC5245A-4-TL-E 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-323-3

트랜지스터 극성:: NPN

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 10 V

컬렉터-베이스 전압 VCBO:: 20 V

이미터-베이스 전압 VEBO:: 1.5 V

최대 DC 수집기 전류:: 30 mA

이득 대역폭 곱 fT:: 8 GHz

최대 작동 온도:: + 150 C

시리즈:: 2SC5245A

DC 전류 이득 hFE 최대:: 270

포장:: 릴

상표:: 온세미컨덕터

DC 수집기/기본 이득 hfe 최소:: 60

Pd - 전력 손실:: 150 mW

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

단위 무게:: 0.000176 oz

Tags: 2SC5245A-4, 2SC5245A, 2SC5245, 2SC524, 2SC52, 2SC5, 2SC

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SC5245A-4-TL-E 설명

***emi: RF Transistor, NPN Single MCP, 10 V, 30 mA, fT = 8 GHz

***r Electronics: RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, NPN

***ark: RF Transistor, 10V, 30mA, fT=8GHz, NPN Single MCP / REEL

***ical: Trans RF BJT NPN 10V 0.03A 150mW Automotive 3-Pin SC-70 T/R

***emi: RF Transistor, NPN Single, 10 V, 30 mA, fT = 8 GHz

***ure Electronics: Bipolar Transistors - BJT BIP NPN 30MA 10V

***ark: RF Transistor, 10V, 30mA, fT=8GHz, NPN Single SSFP / REEL

***W: RF Transistor, NPN, 2 GHz, Max. Gain in dB is 18.5 @ 900 MHz, 3 pin SOT323, Silicon

***ure Electronics: BFU520W Series 12 V 30 mA 450 mW NPN Wideband Silicon RF Transistor - SOT-323-3

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN

***ical: Trans RF BJT NPN 16V 0.05A 450mW Automotive 3-Pin SC-70 T/R

***enic: 1nA 12V 450mW 5mA 95@5mA8V 10GHz NPN -40¡Í~+150¡Í@(Tj) SOT-323-3 Bipolar Transistors - BJT ROHS

***et: Transistor RF BJT NPN 24V 30mA 3-Pin SOT-323

***ment14 APAC: RF Transistor, NPN, 12V, 10GHZ, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:10GHz; Power

***nell: RF TRANSISTOR, NPN, 12V, 10GHZ, SOT-323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10GHz; Power Dissipation Pd: 450mW; DC Collector Current: 30mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ca Corp: RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB

***ical: Trans RF BJT NPN 16V 0.05A 450mW Automotive 3-Pin TO-236AB T/R

***W: RF Transistor, NPN, 2 GHz, 12 V, Silicon, SOT23

***ukat: NPN-HF 12V 30mA 450mW 10GHz SOT23

***et: Trans GP NPN 12V 0.03A 3-Pin SOT-23 T/R

*** Semiconductors SCT: NPN Wideband Silicon RF Transistor, TO-236AB, RoHS

***nell: RF TRANSISTOR, AEC-Q101, 10GHZ, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10GHz; Power Dissipation Pd: 450mW; DC Collector Current: 30mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***emi: RF Transistor, NPN Single, 12 V, 30 mA, fT = 10 GHz

***r Electronics: RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, NPN

***enic: 1Ã×A 12V 350mW 30mA 60@5mA5V 10GHz NPN +150¡Í@(Tj) MCPH-4 Bipolar Transistors - BJT ROHS

***emi: RF Transistor, NPN Single, 12 V, 30 mA, fT = 10 GHz

***enic: 1Ã×A 12V 350mW 30mA 60@5mA5V 10GHz NPN +150¡Í@(Tj) MCPH-4 Bipolar Transistors - BJT ROHS

***r Electronics: RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

***ical: Trans RF BJT NPN 16V 0.05A 450mW Automotive 6-Pin TSSOP T/R

***ure Electronics: BFU520Y Series 12 V 30 mA 450 mW Dual NPN Wideband Silicon RF Transistor-SOT-363

*** Stop Electro: RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN

*** Semiconductors SCT: Dual NPN Wideband Silicon RF Transistor, TSSOP6, RoHS

***et: Trans GP NPN 12V 0.03A 6-Pin TSSOP T/R

***nell: RF TRANSISTOR, AUTO, DUAL NPN, SOT363; Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 10GHz; Power Dissipation Pd: 450mW; DC Collector Current: 30mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Market price

부분 #	제조	설명	재고	가격
2SC5245A-4-TL-E DISTI # V72:2272_07305253	ON Semiconductor	Trans RF BJT NPN 10V 0.03A Automotive 3-Pin Case MCP T/R RoHS: Compliant	3016	3000:$0.1868 1000:$0.2053 500:$0.2405 250:$0.2672 100:$0.2774 25:$0.4364 10:$0.4371 1:$0.5202
2SC5245A-4-TL-E DISTI # 2SC5245A-4-TL-EOSCT-ND	ON Semiconductor	RF TRANS NPN 10V 8GHZ 3MCP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2826In Stock	1000:$0.2390 500:$0.3093 100:$0.3937 10:$0.5270 1:$0.6200
2SC5245A-4-TL-E DISTI # 2SC5245A-4-TL-EOSDKR-ND	ON Semiconductor	RF TRANS NPN 10V 8GHZ 3MCP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2826In Stock	1000:$0.2390 500:$0.3093 100:$0.3937 10:$0.5270 1:$0.6200
2SC5245A-4-TL-E DISTI # 2SC5245A-4-TL-EOSTR-ND	ON Semiconductor	RF TRANS NPN 10V 8GHZ 3MCP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.1843 6000:$0.1979 3000:$0.2116
2SC5245A-4-TL-E DISTI # 26638855	ON Semiconductor	Trans RF BJT NPN 10V 0.03A Automotive 3-Pin Case MCP T/R RoHS: Compliant	66000	3000:$0.1650
2SC5245A-4-TL-E DISTI # 30293455	ON Semiconductor	Trans RF BJT NPN 10V 0.03A Automotive 3-Pin Case MCP T/R RoHS: Compliant	3016	3000:$0.1868 1000:$0.2052 500:$0.2403 250:$0.2670 100:$0.2773 35:$0.4360
2SC5245A-4-TL-E DISTI # 2SC5245A-4-TL-E	ON Semiconductor	Trans GP BJT NPN 10V 0.03A 3-Pin MCP - Tape and Reel (Alt: 2SC5245A-4-TL-E) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1689 6000:$0.1679 12000:$0.1659 18000:$0.1639 30000:$0.1599
2SC5245A-4-TL-E	ON Semiconductor	RoHS: Not Compliant	8000	1000:$0.1800 500:$0.1900 100:$0.2000 25:$0.2100 1:$0.2300
2SC5245A-4-TL-E DISTI # 863-2SC5245A-4-TL-E	ON Semiconductor	Bipolar Transistors - BJT HIGH-FREQUENCY AMPLIFIER RoHS: Compliant	2658	1:$0.5700 10:$0.4700 100:$0.2870 1000:$0.2220 3000:$0.1890
2SC5245A-4-TL-E DISTI # C1S541901652337	ON Semiconductor	GP BJT RoHS: Compliant	3016	250:$0.2670 100:$0.2773 25:$0.4360 10:$0.4368

영상	부분 #	설명
	Mfr.#: SESD0402X1BN-0010-098 OMO.#: OMO-SESD0402X1BN-0010-098	TVS Diodes / ESD Suppressors 1-CH 0402 9V Bi-Di .10pF 20kV SESD
	Mfr.#: MCH3007-TL-H OMO.#: OMO-MCH3007-TL-H	Bipolar Transistors - BJT SWITCHING DEVICE
	Mfr.#: 15GN03MA-TL-E OMO.#: OMO-15GN03MA-TL-E	Bipolar Transistors - BJT BIP NPN 70MA 10V FT=1.5G
	Mfr.#: NSVF3007SG3T1G OMO.#: OMO-NSVF3007SG3T1G	RF Bipolar Transistors RF-TR 12V 30MA FT=8G NPN
	Mfr.#: TPS22810DRVR OMO.#: OMO-TPS22810DRVR	Power Switch ICs - Power Distribution TPS22810 18-V 2-A 72-MOHM ON-RESISTANCE
	Mfr.#: 15GN03MA-TL-E OMO.#: OMO-15GN03MA-TL-E-ON-SEMICONDUCTOR	Bipolar Transistors - BJT BIP NPN 70MA 10V FT=1.5G
	Mfr.#: SESD0402X1BN-0010-098 OMO.#: OMO-SESD0402X1BN-0010-098-LITTELFUSE	TVS Diodes - Transient Voltage Suppressors 1-CH 0402 9V Bi-Di .10pF 20kV SESD
	Mfr.#: NSVF3007SG3T1G OMO.#: OMO-NSVF3007SG3T1G-ON-SEMICONDUCTOR	RF TRANS NPN 12V 8GHZ 3MCPH
	Mfr.#: TPS22810DRVR OMO.#: OMO-TPS22810DRVR-TEXAS-INSTRUMENTS	IC PWR SWITCH N-CHAN 1:1 6WSON
	Mfr.#: QRD1114 OMO.#: OMO-QRD1114-ON-SEMICONDUCTOR	SENSR OPTO TRANS 1.27MM REFL PCB

2SC5245A-4-TL-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes