RGT40NS65DGC9

RGT40NS65DGC9
Mfr. #:
RGT40NS65DGC9
제조사:
Rohm Semiconductor
설명:
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
RGT40NS65DGC9 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
RGT40NS65DGC9 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
패키지/케이스:
TO-262-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
650 V
수집기-이미터 포화 전압:
1.65 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
40 A
Pd - 전력 손실:
161 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 175 C
포장:
튜브
상표:
로옴 반도체
게이트-이미터 누설 전류:
200 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
50
하위 카테고리:
IGBT
부품 번호 별칭:
RGT40NS65D(TO-262)
Tags
RGT40N, RGT4, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, ROHM RGT40NS65DGC9 P-Channel IGBT, 40 A 650 (Minimum) V, 3+Tab-Pin I2PAK
***ical
Trans IGBT Chip N-CH 650V 40A 161000mW 3-Pin(2+Tab) LPDS Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 40A 161000mW Tube
***
IGBT HIGH VOLT AND CURRENT AP
***ark
Igbt, 650V, 40A, 175Deg C, 161W; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-262; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, 175DEG C, 161W; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:161W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
IGBT, 650V, 40A, 175°C, 161W; Corrente di Collettore CC:40A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:161W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
부분 # 제조 설명 재고 가격
RGT40NS65DGC9
DISTI # RGT40NS65DGC9-ND
ROHM SemiconductorIGBT
RoHS: Compliant
Min Qty: 1
Container: Tube
1000In Stock
  • 3000:$1.3734
  • 1000:$1.4224
  • 100:$2.0895
  • 25:$2.4524
  • 10:$2.6000
  • 1:$2.8900
RGT40NS65DGC9
DISTI # 755-RGT40NS65DGC9
ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant
1000
  • 1:$2.8800
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7100
  • 1000:$1.4200
  • 2500:$1.3200
  • 5000:$1.2700
RGT40NS65DGC9ROHM Semiconductor 40
  • 33:$2.1600
  • 10:$2.3760
  • 1:$3.2400
RGT40NS65DGC9ROHM SemiconductorIGBT Transistors IGBT HIGHVOLT AND CURRENT AP
RoHS: Compliant
Americas -
    RGT40NS65DGC9ROHM SemiconductorRoHS(ship within 1day)50
    • 1:$3.0000
    • 10:$2.2500
    • 50:$1.5000
    • 100:$1.2000
    • 500:$1.1200
    • 1000:$1.0800
    RGT40NS65DGC9
    DISTI # 3132324
    ROHM SemiconductorIGBT, 650V, 40A, 175DEG C, 161W
    RoHS: Compliant
    0
    • 1000:$1.8000
    • 500:$2.1100
    • 250:$2.2700
    • 100:$2.3900
    • 10:$2.7900
    • 1:$3.6800
    RGT40NS65DGC9
    DISTI # 3132324
    ROHM SemiconductorIGBT, 650V, 40A, 175DEG C, 161W0
    • 500:£1.2100
    • 250:£1.3000
    • 100:£1.3700
    • 10:£1.6000
    • 1:£2.1100
    영상 부분 # 설명
    RGT40NS65DGC9

    Mfr.#: RGT40NS65DGC9

    OMO.#: OMO-RGT40NS65DGC9

    IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    RGT40NS65DGTL

    Mfr.#: RGT40NS65DGTL

    OMO.#: OMO-RGT40NS65DGTL

    IGBT Transistors 650V 20A IGBT Stop Trench
    RGT40NL65DGTL

    Mfr.#: RGT40NL65DGTL

    OMO.#: OMO-RGT40NL65DGTL

    IGBT Transistors FIELD STOP TRENCH IGBT
    RGT40NS65DGTL

    Mfr.#: RGT40NS65DGTL

    OMO.#: OMO-RGT40NS65DGTL-ROHM-SEMI

    IGBT Transistors 650V 20A Field Stop Trench IGBT
    RGT40NL65DGTL

    Mfr.#: RGT40NL65DGTL

    OMO.#: OMO-RGT40NL65DGTL-1190

    FIELD STOP TRENCH IGBT
    RGT40NS65DGC9

    Mfr.#: RGT40NS65DGC9

    OMO.#: OMO-RGT40NS65DGC9-1190

    IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    유효성
    재고:
    Available
    주문 시:
    1984
    수량 입력:
    RGT40NS65DGC9의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.88
    US$2.88
    10
    US$2.45
    US$24.50
    100
    US$1.96
    US$196.00
    500
    US$1.71
    US$855.00
    1000
    US$1.42
    US$1 420.00
    2500
    US$1.32
    US$3 300.00
    5000
    US$1.27
    US$6 350.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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