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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| RFD8P05 DISTI # RFD8P05-ND | ON Semiconductor | MOSFET P-CH 50V 8A I-PAK RoHS: Not compliant Min Qty: 1800 Container: Tube | Limited Supply - Call | |
| RFD8P05SM DISTI # RFD8P05SM-ND | ON Semiconductor | MOSFET P-CH 50V 8A TO-252AA RoHS: Not compliant Min Qty: 1800 Container: Tube | Limited Supply - Call | |
| RFD8P05SM DISTI # RFD8P05SM | ON Semiconductor | - Bulk (Alt: RFD8P05SM) Min Qty: 1667 Container: Bulk | Americas - 0 |
|
| RFD8P05SM9A DISTI # RFD8P05SM9A | Renesas Electronics Corporation | Trans MOSFET P-CH 50V 8A 3-Pin TO-252AA T/R - Bulk (Alt: RFD8P05SM9A) RoHS: Not Compliant Min Qty: 391 Container: Bulk | Americas - 0 |
|
| RFD8P05 DISTI # 512-RFD8P05 | ON Semiconductor | MOSFET TO-251AA P-Ch Power RoHS: Not compliant | 0 | |
| RFD8P05SM9A DISTI # 512-RFD8P05SM9A | ON Semiconductor | MOSFET TO-252 RoHS: Not compliant | 0 | |
| RFD8P05SM DISTI # 512-RFD8P05SM | ON Semiconductor | MOSFET TO-252AA P-Ch Power RoHS: Not compliant | 0 | |
| RFD8P05SM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 3600 |
|
| RFD8P05SM9A | Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 3171 |
|
| RFD8P05SM9AS2463 | Harris Semiconductor | RoHS: Not Compliant | 2500 |
|
| RFD8P05 | Intersil Corporation | 327 |
| |
| RFD8P05 | Intersil Corporation | MOSFET Transistor, P-Channel, TO-251AA | 261 |
|
| RFD8P05SM | Harris Semiconductor | 8 A, 50 V, 0.3 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-252AA | 431 |
|
| RFD8P05SM | N/A | 8 A, 50 V, 0.3 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-252AA | 932 |
|
| RFD8P05SM9A | HARTING Technology Group | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 54200 | |
| RFD8P05SM | HARTING Technology Group | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | 3017 | |
| RFD8P05SM96 | HARTING Technology Group | RoHS: Not Compliant | 750 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: RFDA2015TR13 OMO.#: OMO-RFDA2015TR13-279 |
RF Amplifier 0.5 - 2.5 GHz 25 dBm, 11.5 dB |
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Mfr.#: RFD10N05SM96 OMO.#: OMO-RFD10N05SM96-1190 |
신규 및 오리지널 |
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Mfr.#: RFD14N05LSM9AS2515 OMO.#: OMO-RFD14N05LSM9AS2515-1190 |
신규 및 오리지널 |
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Mfr.#: RFD15P06SM9AS2463 OMO.#: OMO-RFD15P06SM9AS2463-1190 |
신규 및 오리지널 |
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Mfr.#: RFD16N06LE OMO.#: OMO-RFD16N06LE-1190 |
신규 및 오리지널 |
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Mfr.#: RFD16N06LESM OMO.#: OMO-RFD16N06LESM-1190 |
MOSFET FET 60V 47.0 MOHM DPAK |
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Mfr.#: RFD8P06LE OMO.#: OMO-RFD8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
Mfr.#: RFD90101 OMO.#: OMO-RFD90101-RF-DIGITAL |
RFDUINO TEASER KIT |
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|
Mfr.#: RFDB1B02/3007655 OMO.#: OMO-RFDB1B02-3007655-1190 |
신규 및 오리지널 |
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Mfr.#: RFDIP2520080TMOT OMO.#: OMO-RFDIP2520080TMOT-1190 |
신규 및 오리지널 |