SIDR870ADP-T1-GE3

Name: Vishay - SIDR870ADP-T1-GE3
Brand: Vishay
SKU: OMO-3590006
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIDR870ADP-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 100V 95A SO-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIDR870ADP-T1-GE3 데이터 시트
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추가 정보:: SIDR870ADP-T1-GE3 추가 정보

제품 속성
속성 값

Tags: SIDR, SID

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIDR870ADP-T1-GE3 설명

***et: TrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R

***ical: Trans MOSFET N-CH 100V 95A 8-Pin PowerPAK SO EP T/R

***i-Key: MOSFET N-CH 100V 95A SO-8

***ark: Mosfet, N-Ch, 100V, 95A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0055Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 100V, 95A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, CA-N, 100V, 95A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:95A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0055ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

SIDR870ADP-T1-GE3 추가 정보

TrenchFET® Gen IV Top-Side Double Cooling MOSFETs: Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.

Market price

부분 #	제조	설명	재고	가격
SIDR870ADP-T1-GE3 DISTI # V72:2272_21388906	Vishay Intertechnologies	SIDR870ADP-T1-GE3	5870	75000:$0.8958 30000:$0.9084 15000:$0.9209 6000:$0.9335 3000:$0.9460 1000:$0.9585 500:$1.1163 250:$1.1842 100:$1.3246 50:$1.5084 25:$1.6760 10:$1.6987 1:$2.2457
SIDR870ADP-T1-GE3 DISTI # V99:2348_21388906	Vishay Intertechnologies	SIDR870ADP-T1-GE3	0	6000:$0.9696
SIDR870ADP-T1-GE3 DISTI # SIDR870ADP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 95A SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5514In Stock	1000:$1.0374 500:$1.2520 100:$1.5238 10:$1.8960 1:$2.1100
SIDR870ADP-T1-GE3 DISTI # SIDR870ADP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 95A SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5514In Stock	1000:$1.0374 500:$1.2520 100:$1.5238 10:$1.8960 1:$2.1100
SIDR870ADP-T1-GE3 DISTI # SIDR870ADP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 95A SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	6000:$0.9030 3000:$0.9377
SIDR870ADP-T1-GE3 DISTI # 31950099	Vishay Intertechnologies	SIDR870ADP-T1-GE3	5870	7:$2.2457
SIDR870ADP-T1-GE3 DISTI # SIDR870ADP-T1-GE3	Vishay Intertechnologies	TrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR870ADP-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.8479 30000:$0.8709 18000:$0.8959 12000:$0.9339 6000:$0.9619
SIDR870ADP-T1-GE3 DISTI # 59AC7342	Vishay Intertechnologies	N-CHANNEL 100-V (D-S) MOSFET	0	10000:$0.8270 6000:$0.8600 4000:$0.8930 2000:$0.9930 1000:$1.0500 1:$1.1200
SIDR870ADP-T1-GE3 DISTI # 50AC9645	Vishay Intertechnologies	MOSFET, N-CH, 100V, 95A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	5622	500:$1.1700 250:$1.2600 100:$1.3400 50:$1.4700 25:$1.6000 10:$1.7300 1:$2.0800
SIDR870ADP-T1-GE3 DISTI # 78-SIDR870ADP-T1-GE3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC RoHS: Compliant	8917	1:$2.0600 10:$1.7100 100:$1.3300 500:$1.1600 1000:$0.9600 3000:$0.8940 6000:$0.8600 9000:$0.8270
SIDR870ADP-T1-GE3 DISTI # 2846628	Vishay Intertechnologies	MOSFET, N-CH, 100V, 95A, POWERPAK SO RoHS: Compliant	5622	1000:$1.5600 500:$1.8800 100:$2.2800 10:$2.8400 1:$3.1600
SIDR870ADP-T1-GE3 DISTI # 2846628	Vishay Intertechnologies	MOSFET, N-CH, 100V, 95A, POWERPAK SO	5652	500:£0.8910 250:£0.9560 100:£1.0200 10:£1.3400 1:£1.8000

SIDR870ADP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes