SIR470DP-T1-GE3

Mfr. #:: SIR470DP-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 40V 60A PPAK SO-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIR470DP-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SIR470DP-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SIR814DP-T1-GE3

단위 무게: 0.017870 oz

장착 스타일: SMD/SMT

패키지 케이스: PowerPAKR SO-8

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: PowerPAKR SO-8

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 104W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 40V

입력-커패시턴스-Ciss-Vds: 5660pF @ 20V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 60A (Tc)

Rds-On-Max-Id-Vgs: 2.3 mOhm @ 20A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Charge-Qg-Vgs: 155nC @ 10V

Pd 전력 손실: 6.25 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 39 ns

상승 시간: 31 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 60 A

Vds-드레인-소스-고장-전압: 40 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.5 V

Rds-On-Drain-Source-Resistance: 2.2 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 85 ns

일반 켜기 지연 시간: 40 ns

순방향 트랜스컨덕턴스-최소: 190 S

채널 모드: 상승

Tags: SIR470DP-T1-G, SIR470DP-T, SIR470, SIR47, SIR4, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIR470DP-T1-GE3 설명

***ure Electronics: Single N-Channel 40 V 0.0023 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8

***nell: N CHANNEL MOSFET, 40V, 60A, SOIC, FULL R

***ical: Trans MOSFET N-CH 40V 60A 8-Pin PowerPAK SO EP T/R

***ment14 APAC: N CHANNEL MOSFET, 40V, 60A, SOIC; Transi; N CHANNEL MOSFET, 40V, 60A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:40V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.5V; No. of Pins:8

SIR470DP-T1-GE3 추가 정보

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

ThunderFET® Power MOSFETs: Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

Market price

부분 #	제조	설명	재고	가격
SIR470DP-T1-GE3 DISTI # V72:2272_09215740	Vishay Intertechnologies	Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R RoHS: Compliant	3061	3000:$0.9248 1000:$1.0275 500:$1.1417 250:$1.2685 100:$1.4095 25:$1.5432 10:$1.7148 1:$1.9734
SIR470DP-T1-GE3 DISTI # V36:1790_09215740	Vishay Intertechnologies	Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R RoHS: Compliant	3000	3000:$1.1663
SIR470DP-T1-GE3 DISTI # SIR470DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 40V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7200In Stock	1000:$1.4950 500:$1.8043 100:$2.3198 10:$2.8870 1:$3.2000
SIR470DP-T1-GE3 DISTI # SIR470DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 40V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7200In Stock	1000:$1.4950 500:$1.8043 100:$2.3198 10:$2.8870 1:$3.2000
SIR470DP-T1-GE3 DISTI # SIR470DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 40V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$1.3514
SIR470DP-T1-GE3 DISTI # 25789916	Vishay Intertechnologies	Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R RoHS: Compliant	3061	3000:$0.9248 1000:$1.0275 500:$1.1417 250:$1.2685 100:$1.4095 25:$1.5432 10:$1.7148 9:$1.9734
SIR470DP-T1-GE3 DISTI # 26960935	Vishay Intertechnologies	Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R RoHS: Compliant	3000	3000:$1.1663
SIR470DP-T1-GE3 DISTI # SIR470DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R (Alt: SIR470DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 3000	3000:€1.7659 6000:€1.2369 12000:€1.0199 18000:€0.9059 30000:€0.8569
SIR470DP-T1-GE3 DISTI # SIR470DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SIR470DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 2071	1:$0.8239 30:$0.8219 75:$0.8199 150:$0.8179 375:$0.8159 750:$0.8139 1500:$0.8119
SIR470DP-T1-GE3 DISTI # SIR470DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR470DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7809 6000:$0.7569 12000:$0.7269 18000:$0.7069 30000:$0.6879
SIR470DP-T1-GE3 DISTI # 69W7167	Vishay Intertechnologies	Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 69W7167) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$3.4000 25:$2.8200 50:$2.5100 100:$2.1800 250:$2.0500 500:$1.9200 1000:$1.8200
SIR470DP-T1-GE3 DISTI # 69W7167	Vishay Intertechnologies	MOSFET, N CHANNEL, 40V, 60A, POWERPAK SO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes	0	1:$3.4000 25:$2.8200 50:$2.5100 100:$2.1800 250:$2.0500 500:$1.9200 1000:$1.8200
SIR470DP-T1-GE3 DISTI # 16P3655	Vishay Intertechnologies	N CHANNEL MOSFET, 40V, 60A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0019ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V , RoHS Compliant: Yes	0	1:$1.5200 3000:$1.5200
SIR470DP-T1-GE3. DISTI # 30AC0120	Vishay Intertechnologies	N-CHANNEL 40-V (D-S) MOSFET , ROHS COMPLIANT: YES	0	1:$1.5200 3000:$1.5200
SIR470DP-T1-GE3 DISTI # 781-SIR470DP-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	4162	1:$2.8300 10:$2.3500 100:$1.8200 500:$1.6000 1000:$1.5500 3000:$1.5200
SIR470DP-T1-GE3	Vishay Intertechnologies		1438
SIR470DP-T1-GE3 DISTI # C1S803601363615	Vishay Intertechnologies	Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R RoHS: Compliant	3100	250:$1.2639 100:$1.4043 25:$1.5360 10:$1.7066
SIR470DP-T1-GE3 DISTI # C1S806001173655	Vishay Intertechnologies	Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R RoHS: Compliant	3000	3000:$1.1623
SIR470DP-T1-GE3 DISTI # 2335403	Vishay Intertechnologies	MOSFET, N CH, 40V, 60A, POWERPAK SO RoHS: Compliant	2477	1:$4.4800 10:$3.7200 100:$2.8800 500:$2.5400 1000:$2.4100 3000:$2.4100
SIR470DP-T1-GE3 DISTI # 2335403	Vishay Intertechnologies	MOSFET, N CH, 40V, 60A, POWERPAK SO RoHS: Compliant	2547	1:£2.1800 10:£1.8200 100:£1.4000 250:£1.3200 500:£1.2300
SIR470DP-T1-GE3 DISTI # XSFP00000063578	Vishay Siliconix	RoHS: Compliant	4038	3000:$1.5200 4038:$1.3800
SIR470DP-T1-GE3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas - 24000	3000:$0.7360 6000:$0.6960 12000:$0.6740 24000:$0.6640
SIR470DP-T1-GE3.	Vishay Intertechnologies	MOSFET 40V 60A 104W 2.3mohm @ 10V RoHS: Compliant	Americas - 460	10:$1.3200 100:$1.0160 250:$0.9330 500:$0.8480 1000:$0.7710

영상	부분 #	설명
	Mfr.#: SIR470DP-T1-GE3 OMO.#: OMO-SIR470DP-T1-GE3	MOSFET 40V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SIR470DP OMO.#: OMO-SIR470DP-1190	신규 및 오리지널
	Mfr.#: SIR470DP-T1-E3 OMO.#: OMO-SIR470DP-T1-E3-1190	신규 및 오리지널
	Mfr.#: SIR470DP-T1-GE3 OMO.#: OMO-SIR470DP-T1-GE3-VISHAY	MOSFET N-CH 40V 60A PPAK SO-8
	Mfr.#: SIR470DP-T1-GE3 BSC017 OMO.#: OMO-SIR470DP-T1-GE3-BSC017-1190	신규 및 오리지널
	Mfr.#: SIR470DP-T1-GE3-Z OMO.#: OMO-SIR470DP-T1-GE3-Z-1190	신규 및 오리지널
	Mfr.#: SIR470DP-T1-GE3. OMO.#: OMO-SIR470DP-T1-GE3--1190	N CHANNEL MOSFET, 40V, 60A, SOIC, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0019ohm, Rds(on) Test Voltage Vg

SIR470DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes