STW18NM60ND

STW18NM60ND
Mfr. #:
STW18NM60ND
제조사:
STMicroelectronics
설명:
MOSFET N-CH 600V 13A TO-247
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STW18NM60ND 데이터 시트
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추가 정보:
STW18NM60ND 추가 정보 STW18NM60ND Product Details
제품 속성
속성 값
제조사
제품 카테고리
FET - 단일
시리즈
N-채널 MDmesh
포장
튜브
단위 무게
1.340411 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
130 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
18 ns
상승 시간
15.5 ns
Vgs 게이트 소스 전압
25 V
Id-연속-드레인-전류
13 A
Vds-드레인-소스-고장-전압
650 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Resistance
290 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
13 ns
일반 켜기 지연 시간
55 ns
Qg-Gate-Charge
34 nC
Tags
STW18NM6, STW18NM, STW18, STW1, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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MOSFET, N CH, 600V, 14A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: -; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 3V; Power Dissi
***ark
MOSFET N CH 600V 14A TO-247; Transistor Polarity:N Channel; On State Resistance:270mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; Case Style:TO-247; Cont Current Id:7A; Termination Type:Through Hole;;RoHS Compliant: Yes
***icroelectronics
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
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N-Channel 600 V 0.28 O 110 W Flange Mount MDmesh II Plus Power Mosfet - TO-247-3
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Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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MOSFET, N-CH, 600V, 13A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.255ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
N CHANNEL MOSFET, 600V, 16A, TO-247; Tra; N CHANNEL MOSFET, 600V, 16A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
***nell
MOSFET, N, 600V, 16A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:16A; Resistance, Rds On:0.4ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:64A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds:600V; Voltage, Vds Max:600V
***ure Electronics
Single N-Channel 600 V 0.4 Ohms Flange Mount Power Mosfet - TO-247
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N TO-247AC 600V 16A; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:600V; On Resistance Rds(on):400mohm; Power Dissipation Pd:280W; Transistor Case Style:TO-247AC; No. of Pins:3; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:280W; Power Dissipation Pd:280W; Pulse Current Idm:64A; Voltage Vds:600V
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IRFP17N50L Series N-Channel 500 V 0.28 Ohm 220 W Power Mosfet - TO-247AC
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MOSFET, N, 500V, 16A, TO-247AC; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 320ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 220W; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Junction to Case Thermal Resistance A: 0.56°C/W; On State resistance @ Vgs = 10V: 320mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 64A; Voltage Vds Typ: 500V; Voltage Vgs Rds on Measurement: 10V
부분 # 제조 설명 재고 가격
STW18NM60ND
DISTI # 497-13887-5-ND
STMicroelectronicsMOSFET N-CH 600V 13A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube
254In Stock
  • 120:$5.1345
  • 30:$5.5967
  • 1:$6.8700
STW18NM60NDSTMicroelectronicsN-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-247
RoHS: Compliant
300Tube
  • 600:$3.0000
STW18NM60ND
DISTI # 511-STW18NM60ND
STMicroelectronicsMOSFET N-CH 600V 0.25Ohm 13A Fdmesh II
RoHS: Compliant
0
    STW18NM60NDSTMicroelectronicsAVAILABLE1899
      STW18NM60ND
      DISTI # XSFP00000145774
      STMicroelectronics 
      RoHS: Compliant
      202
      • 34:$6.0000
      • 202:$5.4500
      영상 부분 # 설명
      STW18N60DM2

      Mfr.#: STW18N60DM2

      OMO.#: OMO-STW18N60DM2

      MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package
      STW18N60M2

      Mfr.#: STW18N60M2

      OMO.#: OMO-STW18N60M2

      MOSFET N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
      STW18NM60N

      Mfr.#: STW18NM60N

      OMO.#: OMO-STW18NM60N

      MOSFET N-channel 600 V 0.27ohms 13A Mdmesh
      STW18N65M5

      Mfr.#: STW18N65M5

      OMO.#: OMO-STW18N65M5

      MOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET
      STW18NK60Z

      Mfr.#: STW18NK60Z

      OMO.#: OMO-STW18NK60Z

      MOSFET N-Ch 600 Volt 16 Amp
      STW18N60M2

      Mfr.#: STW18N60M2

      OMO.#: OMO-STW18N60M2-STMICROELECTRONICS

      IGBT Transistors MOSFET POWER MOSFET
      STW18NM60N

      Mfr.#: STW18NM60N

      OMO.#: OMO-STW18NM60N-STMICROELECTRONICS

      MOSFET N-CH 600V 13A TO-247
      STW18N65M5

      Mfr.#: STW18N65M5

      OMO.#: OMO-STW18N65M5-STMICROELECTRONICS

      MOSFET N CH 650V 15A TO-247
      STW18NM60N,W18NM60N

      Mfr.#: STW18NM60N,W18NM60N

      OMO.#: OMO-STW18NM60N-W18NM60N-1190

      신규 및 오리지널
      STW18NM80,18NM80

      Mfr.#: STW18NM80,18NM80

      OMO.#: OMO-STW18NM80-18NM80-1190

      신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      4500
      수량 입력:
      STW18NM60ND의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$4.50
      US$4.50
      10
      US$4.28
      US$42.75
      100
      US$4.05
      US$405.00
      500
      US$3.82
      US$1 912.50
      1000
      US$3.60
      US$3 600.00
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