CSD75301W1015

CSD75301W1015
Mfr. #:
CSD75301W1015
설명:
MOSFET P-Ch-Dual Common Source Pwr MOSFETs
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
CSD75301W1015 데이터 시트
배달:
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추가 정보:
CSD75301W1015 추가 정보 CSD75301W1015 Product Details
제품 속성
속성 값
제조사:
텍사스 인스트루먼트
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
DSBGA-6
채널 수:
2 Channel
트랜지스터 극성:
P-채널
Vds - 드레인 소스 항복 전압:
20 V
Id - 연속 드레인 전류:
1.2 A
Rds On - 드레인 소스 저항:
100 mOhms
Vgs - 게이트 소스 전압:
8 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
800 mW
구성:
듀얼
채널 모드:
상승
상표명:
넥스펫
포장:
키:
0.625 mm
길이:
1.5 mm
제품:
MOSFET 소신호
시리즈:
CSD75301W1015
트랜지스터 유형:
2 P-Channel
너비:
1 mm
상표:
텍사스 인스트루먼트
가을 시간:
16 ns
상품 유형:
MOSFET
상승 시간:
1.7 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
38 ns
일반적인 켜기 지연 시간:
3 ns
단위 무게:
0.000060 oz
Tags
CSD75, CSD7, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
P-Channel Dual Common Source NexFET™ Power MOSFET 6-DSBGA -55 to 150
***ical
Trans MOSFET P-CH 20V 1.2A 6-Pin DSBGA T/R
***et
Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key
MOSFET 2P-CH 20V 1.2A 6DSBGA
***th Star Micro
the device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.
***ark
P CH DUAL COMMON SOURCE POWER MOSFET, -20V, -1.2A, DSBGA-6; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, PP CH, 20V, 1.2A, 6DSBGA; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:800mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:DSBGA; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-1.2A; Drain Source Voltage Vds:-20V; Module Configuration:Dual P Channel; On Resistance Rds(on):0.08ohm; Power Dissipation Pd:800mW
***nell
MOSFET, 2 CANALI P, 20V, 1.2A, 6DSBGA; Polarità Transistor:Canale P Doppio; Corrente Continua di Drain Id:-1.2A; Tensione Drain Source Vds:-20V; Resistenza di Attivazione Rds(on):0.08ohm; Tensione Vgs di Misura Rds(on):-4.5V; Tensione di Soglia Vgs:-700mV; Dissipazione di Potenza Pd:800mW; Modello Case Transistor:DSBGA; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Configurazione Modulo:Doppio a Canale P; Corrente Continua di Drain Id, Canale P:-1.2A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza di Attivazione Rds(on), Canale P:0.15ohm; Temperatura di Esercizio Min:-55°C; Tensione Drain Source Vds, Canale P:-20V
부분 # 설명 재고 가격
CSD75301W1015
DISTI # 296-24261-2-ND
MOSFET 2P-CH 20V 1.2A 6DSBGA
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    CSD75301W1015
    DISTI # 296-24261-1-ND
    MOSFET 2P-CH 20V 1.2A 6DSBGA
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      CSD75301W1015
      DISTI # 296-24261-6-ND
      MOSFET 2P-CH 20V 1.2A 6DSBGA
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        CSD75301W1015
        DISTI # CSD75301W1015
        Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET (Alt: CSD75301W1015)
        RoHS: Compliant
        Min Qty: 962
        Americas - 0
        • 962:$0.3769
        • 964:$0.3589
        • 1926:$0.3469
        • 4810:$0.3349
        • 9620:$0.3259
        CSD75301W1015
        DISTI # 595-CSD75301W1015
        MOSFET P-Ch-Dual Common Source Pwr MOSFETs
        RoHS: Compliant
        0
          CSD75301W1015Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant
          1760
          • 1000:$0.3800
          • 500:$0.4000
          • 100:$0.4200
          • 25:$0.4400
          • 1:$0.4700
          CSD75301W1015
          DISTI # 1892455
          MOSFET, PP CH, 20V, 1.2A, 6DSBGA
          RoHS: Compliant
          988
          • 5:£0.6490
          • 25:£0.5860
          • 100:£0.4450
          • 250:£0.4190
          • 500:£0.3940
          영상 부분 # 설명
          CSD75301W1015

          Mfr.#: CSD75301W1015

          OMO.#: OMO-CSD75301W1015

          MOSFET P-Ch-Dual Common Source Pwr MOSFETs
          CSD75301W1015

          Mfr.#: CSD75301W1015

          OMO.#: OMO-CSD75301W1015-TEXAS-INSTRUMENTS

          IGBT Transistors MOSFET P-Ch-Dual Common Source Pwr MOSFETs
          유효성
          재고:
          Available
          주문 시:
          4500
          수량 입력:
          CSD75301W1015의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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