NGTB30N120FL2WG

Mfr. #:: NGTB30N120FL2WG
제조사:: ON Semiconductor
설명:: IGBT Transistors 1200V/30A FAST IGBT FSII
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NGTB30N120FL2WG 데이터 시트
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HTML Datasheet:: NGTB30N120FL2WG Datasheet NGTB30N120FL2WG Datasheet (P4-P6)NGTB30N120FL2WG Datasheet (P7-P8)
ECAD Model:
추가 정보:: NGTB30N120FL2WG 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-247

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 1200 V

수집기-이미터 포화 전압:: 2 V

최대 게이트 이미터 전압:: 30 V

25C에서 연속 수집기 전류:: 60 A

Pd - 전력 손실:: 452 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

시리즈:: NGTB30N120FL2

포장:: 튜브

상표:: 온세미컨덕터

게이트-이미터 누설 전류:: 200 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 30

하위 카테고리:: IGBT

단위 무게:: 0.229281 oz

Tags: NGTB30N12, NGTB30N1, NGTB30, NGTB3, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB30N120FL2WG 설명

***ical: Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube

***Semiconductor: IGBT, 1200V 30A FS2 Solar/UPS

***i-Key: IGBT 1200V 60A 452W TO247

***S: new, original packaged

NGTB30N120FL2WG 추가 정보

NGTB 25-75A Insulated Gate Bipolar Transistors: ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

NGTBxxN120L Motor Drive IGBTs: ON Semiconductor's NGTBxxN120L Motor Drive IGBTs feature a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. They are available 1200 V in 15 A, 20 A and 25 A rated versions. These IGBTs are well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.Learn More

Market price

부분 #	제조	설명	재고	가격
NGTB30N120FL2WG DISTI # NGTB30N120FL2WGOS-ND	ON Semiconductor	IGBT 1200V 60A 452W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	42In Stock	2520:$3.1304 510:$3.9071 120:$4.5897 30:$5.2957 10:$5.6020 1:$6.2400
NGTB30N120FL2WG DISTI # NGTB30N120FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 1200V 60A 3-Pin TO-247 Rail - Bulk (Alt: NGTB30N120FL2WG) RoHS: Compliant Min Qty: 66 Container: Bulk	Americas - 0	660:$4.5900 198:$4.7900 330:$4.7900 66:$4.8900 132:$4.8900
NGTB30N120FL2WG DISTI # NGTB30N120FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 1200V 60A 3-Pin TO-247 Rail (Alt: NGTB30N120FL2WG) RoHS: Compliant Min Qty: 90	Asia - 0	4500:$5.7000 2250:$5.7966 900:$5.8966 450:$6.1071 270:$6.3333 180:$6.5769 90:$6.8400
NGTB30N120FL2WG DISTI # 28X8010	ON Semiconductor	IGBT, SINGLE, 1.2KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:452W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes	0	2500:$4.7200 1000:$5.1000 500:$5.6100 250:$6.1200 100:$6.6700 25:$7.3600 10:$8.0400 1:$8.8900
NGTB30N120FL2WG DISTI # 863-NGTB30N120FL2WG	ON Semiconductor	IGBT Transistors 1200V/30A FAST IGBT FSII RoHS: Compliant	198	1:$8.1400 10:$7.3600 25:$7.0200 100:$6.0900
NGTB30N120FL2WG	ON Semiconductor	Insulated Gate Bipolar Transistor RoHS: Compliant	3660	1000:$3.2800 500:$3.4500 100:$3.5900 25:$3.7400 1:$4.0300
NGTB30N120FL2WG DISTI # 7961337P	ON Semiconductor	IGBT 1200V 30A FIELD STOP 2DIODE TO247, TU	101	40:£5.2650 20:£5.5150
NGTB30N120FL2WG DISTI # 2399107	ON Semiconductor	RoHS: Compliant	0	100:$9.3700 25:$10.8000 10:$11.3200 1:$12.5200

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