IS43LR32800F-6BL-TR

Mfr. #:: IS43LR32800F-6BL-TR
제조사:: ISSI
설명:: DRAM 256M,1.8V,MobileDDR 166Mhz,90 ball BGA
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IS43LR32800F-6BL-TR 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IS43LR32800F-6BL-TR 추가 정보

제품 속성
속성 값

제조사:: ISSI

제품 카테고리:: 적은 양

RoHS:: Y

유형:: SDRAM Mobile - LPDDR1

데이터 버스 폭:: 32 bit

조직:: 8 M x 32

패키지/케이스:: TFBGA-90

메모리 크기:: 256 Mbit

최대 클록 주파수:: 166 MHz

액세스 시간:: 6 ns

공급 전압 - 최대:: 1.95 V

공급 전압 - 최소:: 1.7 V

공급 전류 - 최대:: 130 mA

최소 작동 온도:: 0 C

최대 작동 온도:: + 70 C

시리즈:: IS43LR32800F

포장:: 릴

상표:: ISSI

장착 스타일:: SMD/SMT

습기에 민감한:: 네

작동 공급 전압:: 1.8 V

상품 유형:: 적은 양

공장 팩 수량:: 2500

하위 카테고리:: 메모리 및 데이터 저장

상표명:: RLDRAM2

Tags: IS43LR32800F, IS43LR328, IS43LR3, IS43LR, IS43L, IS43, IS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS43LR32800F-6BL-TR 설명

***et: DRAM Chip Mobile DDR SDRAM 256M-Bit 8M x 32 1.8V 90-Pin TFBGA T/R

***or: IC DRAM 256MBIT PARALLEL 90TFBGA

***i-Key: IC DDR 256M 166MHZ 90BGA

IS43LR32800F-6BL-TR 추가 정보

IS43LR16800F 2Mx16 Mobile DDR SDRAM: ISSI IS43LR16800F 2Mx16 Mobile DDR SDRAM is 134,217,728 bits Mobile Double Data Rate (DDR) Synchronous DRAM (SDRAM) organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock.

Market price

부분 #	제조	설명	재고
IS43LR32800F-6BL-TR DISTI # IS43LR32800F-6BL-TR-ND	Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 90TFBGA RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
IS43LR32800F-6BL-TR DISTI # IS43LR32800F-6BL-TR	Integrated Silicon Solution Inc	DRAM Chip Mobile DDR SDRAM 256M-Bit 8M x 32 1.8V 90-Pin TFBGA T/R - Tape and Reel (Alt: IS43LR32800F-6BL-TR) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0
IS43LR32800F-6BL-TR DISTI # 870-IS43LR32800F6BLR	Integrated Silicon Solution Inc	DRAM 256M,1.8V,MobileDDR 166Mhz,90 ball BGA RoHS: Compliant	0

관련 상품

영상	부분 #	설명
	Mfr.#: IS43LR32800G-6BLI-TR OMO.#: OMO-IS43LR32800G-6BLI-TR	DRAM 256M, 1.8V, 166Mhz Mobile DDR
	Mfr.#: IS43LR32800G-6BL OMO.#: OMO-IS43LR32800G-6BL	DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
	Mfr.#: IS43LR32800F-6BLI-TR OMO.#: OMO-IS43LR32800F-6BLI-TR	DRAM 256M,1.8V,Mobile DDR 166Mhz,90 ball BGA
	Mfr.#: IS43LR32800G-6BLI OMO.#: OMO-IS43LR32800G-6BLI	DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
	Mfr.#: IS43LR32800F-6BL OMO.#: OMO-IS43LR32800F-6BL	DRAM 256M 1.8V, 166Mhz Mobile DDR SDRAM
	Mfr.#: IS43LR32800F-6BLI OMO.#: OMO-IS43LR32800F-6BLI	DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
	Mfr.#: IS43LR32800F-6BLI-TR OMO.#: OMO-IS43LR32800F-6BLI-TR-INTEGRATED-SILICON-SOLUTION	DRAM 256M,1.8V,Mobile DDR 166Mhz,90 ball BGA
	Mfr.#: IS43LR32800F-6BL-TR OMO.#: OMO-IS43LR32800F-6BL-TR-INTEGRATED-SILICON-SOLUTION	DRAM 256M,1.8V,MobileDDR 166Mhz,90 ball BGA
	Mfr.#: IS43LR32800G-6BL OMO.#: OMO-IS43LR32800G-6BL-INTEGRATED-SILICON-SOLUTION	DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM
	Mfr.#: IS43LR32800G-6BLI/BL OMO.#: OMO-IS43LR32800G-6BLI-BL-1190	신규 및 오리지널