IXYJ20N120C3D1

Mfr. #:: IXYJ20N120C3D1
제조사:: Littelfuse
설명:: IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IXYJ20N120C3D1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IXYJ20N120C3D1 Datasheet IXYJ20N120C3D1 Datasheet (P4-P6)IXYJ20N120C3D1 Datasheet (P7)
ECAD Model:
추가 정보:: IXYJ20N120C3D1 추가 정보

제품 속성
속성 값

제조사:: 익시스

제품 카테고리:: IGBT 트랜지스터

기술:: 시

패키지/케이스:: TO-247-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 1200 V

수집기-이미터 포화 전압:: 4 V

최대 게이트 이미터 전압:: 30 V

25C에서 연속 수집기 전류:: 21 A

Pd - 전력 손실:: 105 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: IXYJ20N120

포장:: 튜브

연속 수집가 현재 IC 최대:: 21 A

상표:: 익시스

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 30

하위 카테고리:: IGBT

상표명:: XPT

단위 무게:: 1.340411 oz

Tags: IXY

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXYJ20N120C3D1 설명

***ical: Trans IGBT Chip N-CH 1200V 21A 105000mW Automotive 3-Pin(3+Tab) TO-247 ISO

***el Electronic: IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT

***i-Key: IGBT 1200V 21A 105W TO247

***ark: Igbt, Single, 1.2Kv, 36A, To 247Ad Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 1200V 36A 230000mW 3-Pin(3+Tab) TO-247AD

***el Electronic: IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT

***nell: IGBT, SINGLE, 1.2KV, 36A, TO-247AD; DC Collector Current: 36A; Collector Emitter Saturation Voltage Vce(on): 4V; Power Dissipation Pd: 230W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of P

***p One Stop Global: Trans IGBT Chip N-CH 1200V 20A 100000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PH30 Series 1200 V 20 A Through Hole UltraFast IGBT - TO-247AC

***el Electronic: Inductor RF Chip Thin Film 4.1nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R

***ineon SCT: 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 4.2 V Current release time: 330 ns Power dissipation: 100 W

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Max:170ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:23ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***el Electronic: Inductor RF Chip Thin Film 4.2nH 0.1nH 500MHz 14Q-Factor 350mA 400mOhm DCR 0201 T/R

***ure Electronics: IRG4PH30KDPBF Series 1200 V 10 A N-Channel UltraFast IGBT - TO-247AC

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:20A; Collector Emitter Saturation Voltage, Vce(sat):4.2V; Power Dissipation, Pd:100W; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ment14 APAC: SINGLE IGBT, 1.2KV, 20A; Transistor Type; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:3.1V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Current Temperature:25°C; Fall Time Typ:97ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:40A; Rise Time:79ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ure Electronics: GenX3 XPT IGBT 1200 V 64 A Flange Mount High-Speed IGBT - TO-247AD

***el Electronic: IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT

***i-Key: IGBT 1200V 64A 480W TO247

***trelec: IGBT, 1.2kV, 80A, TO-247AD

***S: new, original packaged

***el Nordic: Contact for details

***ure Electronics: IXYH50N120C3D1 Series 1200 V 105 A Flange Mount Siode GENX3 IGBT - TO-247AD

***el Electronic: Trans IGBT Chip N-CH 1.2KV 90A 3-Pin(3+Tab) TO-247AD

***i-Key: IGBT 1200V 90A 625W TO247

***S: new, original packaged

***(Formerly Allied Electronics): Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC

***p One Stop Global: Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube

***ure Electronics: IRG4PH50U Series N-Channel 1.2 kV 45 A Ultrafast Speed IGBT - TO-247AC

***trelec: IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.78 V Current release time: 280 ns Power dissipation: 200 W

***ment14 APAC: SINGLE IGBT, 1.2KV, 45A; Transistor Type; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:3.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Fall Time Max:500ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:180A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

IXYJ20N120C3D1 추가 정보

1200V XPT High Speed IGBTs: IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More

Electrical Vehicle DC Fast Chargers: DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Market price

부분 #	제조	설명	재고	가격
IXYJ20N120C3D1 DISTI # 30283793	IXYS Corporation	1200V High-Speed IGBT For 20-50KHz Switching RoHS: Compliant	60	500:$7.4208 250:$7.9296 100:$8.6976 50:$8.9184 30:$9.4656
IXYJ20N120C3D1 DISTI # IXYJ20N120C3D1-ND	IXYS Corporation	IGBT 1200V 21A 105W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	58In Stock	510:$8.1149 270:$8.6746 120:$9.5141 30:$10.3537 10:$11.1930 1:$12.3100
IXYJ20N120C3D1 DISTI # C1S331700111339	IXYS Corporation	Trans IGBT Chip N-CH 1200V 21A 105000mW Automotive 3-Pin(3+Tab) TO-247 ISO RoHS: Compliant	60	30:$12.1000
IXYJ20N120C3D1 DISTI # 747-IXYJ20N120C3D1	IXYS Corporation	IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT	30	1:$11.7300 10:$10.6600 25:$9.8600 50:$9.2900 100:$9.0600 250:$8.2600 500:$7.7300
IXYJ20N120C3D1 DISTI # 8080209P	IXYS Corporation	IGBT 1200V 9A XPT GENX3 DIODE ISO TO247, TU	60	5:£4.7000

IXYJ20N120C3D1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes