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FFSB20120A

FFSB20120A
Mfr. #:
FFSB20120A
제조사:
ON Semiconductor
설명:
Schottky Diodes & Rectifiers SIC TO263 SBD 20A 1 200V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FFSB20120A 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FFSB20120A 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
쇼트키 다이오드 및 정류기
RoHS:
Y
제품:
쇼트키 탄화규소 다이오드
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
If - 순방향 전류:
32 A
Vrrm - 반복적인 역전압:
1200 V
Vf - 순방향 전압:
1.45 V
Ifsm - 순방향 서지 전류:
135 A
구성:
하나의
기술:
SiC
Ir - 역전류:
200 uA
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
포장:
릴
상표:
온세미컨덕터
Pd - 전력 손실:
333 W
상품 유형:
쇼트키 다이오드 및 정류기
공장 팩 수량:
800
하위 카테고리:
다이오드 및 정류기
Vr - 역 전압:
1200 V
Tags
FFSB2, FFSB, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
영상 부분 # 설명
FFSB2065BDN-F085

Mfr.#: FFSB2065BDN-F085

OMO.#: OMO-FFSB2065BDN-F085

 Schottky Diodes & Rectifiers Auto SiC Schottky Diode, 650 V
FFSB20120A

Mfr.#: FFSB20120A

OMO.#: OMO-FFSB20120A

 Schottky Diodes & Rectifiers SIC TO263 SBD 20A 1 200V
FFSB20120A-F085

Mfr.#: FFSB20120A-F085

OMO.#: OMO-FFSB20120A-F085-ON-SEMICONDUCTOR

 Silicon Carbide Schottky Diode
FFSB2065B-F085

Mfr.#: FFSB2065B-F085

OMO.#: OMO-FFSB2065B-F085-1190

 650V 20A SIC SBD GEN1.5
FFSB2065BDN-F085

Mfr.#: FFSB2065BDN-F085

OMO.#: OMO-FFSB2065BDN-F085-1190

 SIC DIODE 650V
유효성
재고:
Available
주문 시:
1500
수량 입력:
FFSB20120A의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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