SCT10N120

SCT10N120
Mfr. #:
SCT10N120
제조사:
STMicroelectronics
설명:
MOSFET N-CH 1.2KV TO247-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SCT10N120 데이터 시트
배달:
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지불:
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추가 정보:
SCT10N120 추가 정보 SCT10N120 Product Details
제품 속성
속성 값
Tags
SCT10, SCT1, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 1200 V 520 mO 22 nC Silicon Carbide power Mosfet - HiP247
***ical
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
***et
Trans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube
***i-Key
MOSFET N-CH 1.2KV TO247-3
***ronik
SiC-N 1200V 12A 690mOhm HiP247
***ark
Mosfet, N-Ch, 1.2Kv, 12A, 150W, Hip247; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2Kv; On Resistance Rds(On):0.5Ohm; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 1.2KV, 12A, 150W, HIP247; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2kV; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:150W; Transistor Case Style:HiP247; No. of Pins:3Pins; Operating Temperature Max:200°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, CA-N, 1,2KV, 12A, 150W, HIP247; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:1.2kV; Resistenza di Attivazione Rds(on):0.5ohm; Tensione Vgs di Misura Rds(on):20V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:150W; Modello Case Transistor:HiP247; No. di Pin:3Pin; Temperatura di Esercizio Max:200°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Silicon Carbide Power MOSFETs
STMicroelectronics (SiC) MOSFETs feature very low RDS(on) area for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems. They have increased switching efficiency and operating frequency with the lowest Eoff vs. standard silicon technologies. A reduced form factor is possible thanks to the intrinsic body diode. Higher system efficiency and reliability are due to the maximum junction temperature at 200ºC.
부분 # 제조 설명 재고 가격
SCT10N120
DISTI # V99:2348_17630036
STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
RoHS: Compliant
482
  • 1000:$6.8350
  • 500:$7.4480
  • 250:$7.6380
  • 100:$8.3110
  • 25:$9.4770
  • 10:$9.8920
  • 1:$10.7400
SCT10N120
DISTI # V36:1790_16518943
STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
RoHS: Compliant
0
    SCT10N120
    DISTI # 497-16597-5-ND
    STMicroelectronicsMOSFET N-CH 1.2KV TO247-3
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    243In Stock
    • 600:$7.8257
    • 100:$8.7971
    • 25:$9.9844
    • 10:$10.4160
    • 1:$11.3300
    SCT10N120
    DISTI # 25948587
    STMicroelectronicsTrans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
    RoHS: Compliant
    482
    • 1:$10.7400
    SCT10N120
    DISTI # SCT10N120
    STMicroelectronicsTrans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube (Alt: SCT10N120)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 94
    • 1000:€6.1900
    • 500:€6.5900
    • 100:€6.8900
    • 50:€7.1900
    • 25:€7.3900
    • 10:€7.7900
    • 1:€8.4900
    SCT10N120
    DISTI # SCT10N120
    STMicroelectronicsTrans MOSFET N-CH 1200V 12A 3-Pin HiP247 Tube - Bulk (Alt: SCT10N120)
    RoHS: Compliant
    Min Qty: 600
    Container: Bulk
    Americas - 0
    • 6000:$6.4900
    • 3000:$6.6900
    • 1800:$6.9900
    • 1200:$7.2900
    • 600:$7.6900
    SCT10N120H
    DISTI # SCT10N120H
    STMicroelectronics- Tape and Reel (Alt: SCT10N120H)
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 10000:$5.4900
    • 6000:$5.6900
    • 4000:$5.8900
    • 2000:$6.1900
    • 1000:$6.4900
    SCT10N120
    DISTI # 97Y9494
    STMicroelectronicsPTD WBG & POWER RF0
    • 1:$6.4300
    SCT10N120H
    DISTI # 59AC7246
    STMicroelectronicsPTD WBG & POWER RF0
    • 1:$5.4800
    SCT10N120
    DISTI # 511-SCT10N120
    STMicroelectronicsMOSFET Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
    RoHS: Compliant
    328
    • 1:$10.7900
    • 10:$9.9300
    • 25:$9.5100
    • 100:$8.3800
    • 250:$7.9700
    • 500:$7.4600
    • 1000:$6.8400
    SCT10N120H
    DISTI # 511-SCT10N120H
    STMicroelectronicsMOSFET0
    • 1000:$5.9200
    SCT10N120
    DISTI # TMOSP12812
    STMicroelectronicsSiC-N 1200V 12A 690mOhm HiP247
    RoHS: Compliant
    Stock DE - 0Stock HK - 0Stock US - 0
    • 600:$7.8800
    SCT10N120
    DISTI # 3129687
    STMicroelectronicsMOSFET, N-CH, 1.2KV, 12A, 150W, HIP247
    RoHS: Compliant
    0
    • 250:$9.1200
    • 100:$10.5800
    • 50:$11.2400
    • 10:$11.8200
    • 5:$13.5200
    • 1:$14.3600
    SCT10N120
    DISTI # 3129687
    STMicroelectronicsMOSFET, N-CH, 1.2KV, 12A, 150W, HIP247600
    • 100:£6.2700
    • 50:£6.7000
    • 10:£7.1200
    • 5:£8.0700
    • 1:£8.6000
    영상 부분 # 설명
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    Mfr.#: SCT1004T-470M

    OMO.#: OMO-SCT1004T-470M-1190

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    Mfr.#: SCT102BC

    OMO.#: OMO-SCT102BC-1190

    신규 및 오리지널
    SCT105K122D3B23-F

    Mfr.#: SCT105K122D3B23-F

    OMO.#: OMO-SCT105K122D3B23-F-1190

    FILM CAPACITOR
    SCT105K122D3B23F

    Mfr.#: SCT105K122D3B23F

    OMO.#: OMO-SCT105K122D3B23F-1190

    신규 및 오리지널
    SCT105K122D3B31-F

    Mfr.#: SCT105K122D3B31-F

    OMO.#: OMO-SCT105K122D3B31-F-1190

    FILM CAPACITOR
    SCT105K202A3S25

    Mfr.#: SCT105K202A3S25

    OMO.#: OMO-SCT105K202A3S25-1190

    신규 및 오리지널
    SCT12590RE

    Mfr.#: SCT12590RE

    OMO.#: OMO-SCT12590RE-1190

    신규 및 오리지널
    SCT12A1

    Mfr.#: SCT12A1

    OMO.#: OMO-SCT12A1-1190

    신규 및 오리지널
    SCT1842AN-QF5KQ

    Mfr.#: SCT1842AN-QF5KQ

    OMO.#: OMO-SCT1842AN-QF5KQ-1190

    신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    1500
    수량 입력:
    SCT10N120의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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