FGPF4565

Mfr. #:: FGPF4565
제조사:: ON Semiconductor / Fairchild
설명:: IGBT Transistors FS1TIGBT TO220F 650V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FGPF4565 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: FGPF4565 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-220F

장착 스타일:: 구멍을 통해

컬렉터-이미터 전압 VCEO 최대:: 650 V

수집기-이미터 포화 전압:: 1.88 V

최대 게이트 이미터 전압:: 25 V

25C에서 연속 수집기 전류:: 30 A

Pd - 전력 손실:: 30 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: FGPF4565

포장:: 튜브

연속 수집가 현재 IC 최대:: 170 A

상표:: 온세미컨덕터 / 페어차일드

게이트-이미터 누설 전류:: 400 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 1000

하위 카테고리:: IGBT

단위 무게:: 0.080072 oz

Tags: FGPF45, FGPF4, FGPF, FGP

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGPF4565 설명

***ical: Trans IGBT Chip N-CH 650V 30000mW 3-Pin(3+Tab) TO-220F Rail

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Using innovative field stop IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for IPL (Intense Pulsed Light).

***ical: Trans IGBT Chip N-CH 650V 10.8A 31200mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: IKA08N65H5 Series 650 V 10.8 A Through Hole DuoPack IGBT - TO-220-3

***ineon SCT: 650 V, 8 A IGBT with anti-parallel diode in TO-220 package, PG-TO220-3, RoHS

***nell: IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor ; Available until stocks are exhausted

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube

***ark: Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3 Rohs Compliant: Yes

***ineon SCT: High Speed 650 V, 8 A hard-switching TRENCHSTOP™ IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS

***nell: IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 31.2W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 650V 14A 33300mW 3-Pin(3+Tab) TO-220FP Tube

***ineon SCT: 650 V, 15 A IGBT with anti-parallel diode in TO-220 package, PG-TO220-3, RoHS

*** Stop Electro: Insulated Gate Bipolar Transistor, 14A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 650V, 15A, TO220-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 33.3W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-220 Tube

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 30 A high speed

***r Electronics: Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***ical: Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(3+Tab) TO-220AB Tube

***icroelectronics: Trench gate field-stop IGBT M series, 650 V, 15 A low loss

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB

***ical: Trans IGBT Chip N-CH 600V 9A 25000mW 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: STGF10NC60KD Series 600 V 9 A N-Channel Power Mesh IGBT - TO-220FP

***el Electronic: In a Pack of 10, STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***(Formerly Allied Electronics): STGF10NC60KD,IGBT N-ch 600V 10A TO220FP

***ark: IGBT, 600V, 9A, 150DEG C, 25W; Continuous Collector Current:9A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:25W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-RoHS Compliant: Yes

FGPF4565 추가 정보

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

FGAFx0N60 Field Stop IGBTs: ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.

Market price

부분 #	제조	설명	재고	가격
FGPF4565 DISTI # V99:2348_06359510	ON Semiconductor	650V FS TRENCH FOR IPL APPLICA	1150	10000:$0.9108 5000:$0.9421 2500:$0.9790 1000:$1.0215 500:$1.2053 100:$1.3561 10:$1.6204 1:$1.8428
FGPF4565 DISTI # FGPF4565-ND	ON Semiconductor	IGBT 650V 30W TO-220F RoHS: Compliant Min Qty: 1 Container: Tube	268In Stock	1000:$1.1305 500:$1.3643 100:$1.6606 10:$2.0660 1:$2.3000
FGPF4565 DISTI # 26731039	ON Semiconductor	650V FS TRENCH FOR IPL APPLICA	3000	1000:$1.1962
FGPF4565 DISTI # 25845358	ON Semiconductor	650V FS TRENCH FOR IPL APPLICA	1150	1000:$1.0215 500:$1.2053 100:$1.3561 10:$1.6204 7:$1.8428
FGPF4565 DISTI # FGPF4565	ON Semiconductor	Trans IGBT Chip N-CH 650V 170A 3-Pin TO-220F Tube - Rail/Tube (Alt: FGPF4565) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.9699 2000:$0.9639 4000:$0.9509 6000:$0.9389 10000:$0.9159
FGPF4565 DISTI # 512-FGPF4565	ON Semiconductor	IGBT Transistors FS1TIGBT TO220F 650V RoHS: Compliant	571	1:$2.1900 10:$1.8600 100:$1.4900 500:$1.3000 1000:$1.0800 2500:$1.0100 5000:$0.9660
FGPF4565	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor RoHS: Compliant	891	1000:$1.2200 500:$1.2900 100:$1.3400 25:$1.4000 1:$1.5000
FGPF4565 DISTI # C1S541901397111	ON Semiconductor	Trans IGBT Chip N-CH 650V 30000mW 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	1150	1000:$1.0215 500:$1.2053 10:$1.6204

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FGPF4565

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes