OMO ElectronicOMO Electronic
Expand menu
0 카트

SCTW90N65G2V

SCTW90N65G2V
Mfr. #:
SCTW90N65G2V
제조사:
STMicroelectronics
설명:
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SCTW90N65G2V 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SCTW90N65G2V 추가 정보 SCTW90N65G2V Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
SiC
장착 스타일:
구멍을 통해
패키지/케이스:
HIP247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
90 A
Rds On - 드레인 소스 저항:
25 mOhms
Vgs th - 게이트 소스 임계 전압:
1.9 V
Vgs - 게이트 소스 전압:
10 V to 22 V
Qg - 게이트 차지:
157 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 200 C
Pd - 전력 손실:
390 W
구성:
하나의
채널 모드:
상승
포장:
튜브
시리즈:
SCTW90N
트랜지스터 유형:
1 N-Channel
상표:
ST마이크로일렉트로닉스
가을 시간:
16 ns
상품 유형:
MOSFET
상승 시간:
38 ns
공장 팩 수량:
600
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
58 ns
일반적인 켜기 지연 시간:
26 ns
Tags
SCTW, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***va Crawler
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
***ow.cn
Trans MOSFET N-CH SiC 650V 119A Automotive 3-Pin(3+Tab) HIP-247 Tube
***ure Electronics
N-Channel 650 V 24 mOhm 565 W Through Hole Silicon Power Mosfet - HiP-247
***nell
MOSFET, N-CH, 650V, 119A, 200DEG C, 565W;
***et
N-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET
***icroelectronics SCT
SiC MOSFETs, 650V ,119A, 24mΩ, HIP247
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
650 Silicon-Carbide (SiC) MOSFETs
STMicroelectronics 650 Silicon-Carbide (SiC) MOSFETs feature very low on-state resistance (RDS(on)) per area combined with excellent switching performance. This translates into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs exhibit low on-state resistance per area even at high temperatures. SiC MOSFETs also feature excellent switching performance versus the best-in-class IGBTs in all temperature ranges. This simplifies the thermal design of power electronic systems.
부분 # 제조 설명 재고 가격
SCTW90N65G2V
DISTI # V36:1790_17702706		STMicroelectronicsN-channel 650 V SiC MOSFET0
    SCTW90N65G2V
    DISTI # 497-18351-ND    		STMicroelectronicsSILICON CARBIDE POWER MOSFET 650
    RoHS: Compliant
    Container: Tube    		Temporarily Out of Stock
      SCTW90N65G2V
      DISTI # SCTW90N65G2V      		STMicroelectronicsN-CHANNEL 650 V, 0.029 OHM TYP., 90 A SICMOSFET - Rail/Tube (Alt: SCTW90N65G2V)
      RoHS: Not Compliant
      Min Qty: 30
      Container: Tube      		Americas - 0
      • 300:$38.2900
      • 150:$39.0900
      • 90:$40.8900
      • 60:$42.7900
      • 30:$44.8900
      SCTW90N65G2V
      DISTI # 02AH6930      		STMicroelectronicsPTD WBG & POWER RF0
      • 1:$37.5000
      SCTW90N65G2V
      DISTI # 511-SCTW90N65G2V      		STMicroelectronicsMOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
      RoHS: Compliant      		0
      • 1:$49.5000
      • 5:$48.3900
      • 10:$46.5000
      영상 부분 # 설명
      LM7121IMX/NOPB

      Mfr.#: LM7121IMX/NOPB

      OMO.#: OMO-LM7121IMX-NOPB

      		 Operational Amplifiers - Op Amps 175MHz Low Pwr Vtg Feedback Amp
      HV9910CLG-G

      Mfr.#: HV9910CLG-G

      OMO.#: OMO-HV9910CLG-G

      		 LED Lighting Drivers High Brightness LED Driver IC
      LSIC1MO170E1000

      Mfr.#: LSIC1MO170E1000

      OMO.#: OMO-LSIC1MO170E1000

      		 MOSFET 1700V 1000mOhm SiC MOSFET
      IRF6616TRPBF

      Mfr.#: IRF6616TRPBF

      OMO.#: OMO-IRF6616TRPBF

      		 MOSFET 40V 1 N-CH 3.7mOhm DirectFET 1.8V Vgs
      LT1763CS8-3.3#PBF

      Mfr.#: LT1763CS8-3.3#PBF

      OMO.#: OMO-LT1763CS8-3-3-PBF

      		 LDO Voltage Regulators 500mA, Low Noise, LDO Micropower Regulators
      LT1763CS8-1.8#PBF

      Mfr.#: LT1763CS8-1.8#PBF

      OMO.#: OMO-LT1763CS8-1-8-PBF

      		 LDO Voltage Regulators 1.8V 500mA L/Noise LDO uP
      LSM6DSLTR

      Mfr.#: LSM6DSLTR

      OMO.#: OMO-LSM6DSLTR

      		 IMUs - Inertial Measurement Units iNEMO 6DoF inertial module, for smart phones and battery operated IoT, Gaming, Wearable and Consumer Electronics. Ultra-low power and high accuracy
      NSR0320MW2T1G

      Mfr.#: NSR0320MW2T1G

      OMO.#: OMO-NSR0320MW2T1G

      		 Schottky Diodes & Rectifiers 20V 200mW Single
      LSIC1MO170E1000

      Mfr.#: LSIC1MO170E1000

      OMO.#: OMO-LSIC1MO170E1000-LITTELFUSE

      		 1700V/1000mohm SiC MOSFET TO-247-3L
      HV9910CLG-G

      Mfr.#: HV9910CLG-G

      OMO.#: OMO-HV9910CLG-G-MICROCHIP-TECHNOLOGY

      		 LED Lighting Drivers High Brightness LED Driver IC
      유효성
      재고:
      Available
      주문 시:
      5500
      수량 입력:
      SCTW90N65G2V의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$49.50
      US$49.50
      5
      US$48.39
      US$241.95
      10
      US$46.50
      US$465.00
      시작
      최신 제품
      More Newest Products
      Top