SIA427DJ-T1-GE3

SIA427DJ-T1-GE3
Mfr. #:
SIA427DJ-T1-GE3
제조사:
Vishay
설명:
MOSFET P-CH 8V 12A SC-70-6
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIA427DJ-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SIA427DJ-T1-GE3 추가 정보
제품 속성
속성 값
제조사
비쉐이
제품 카테고리
FET - 단일
시리즈
SIA4xxDJ
포장
부분 별칭
SIA427DJ-GE3
장착 스타일
SMD/SMT
패키지 케이스
PowerPAK-SC-70-6
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 P-Channel
Pd 전력 손실
3.5 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
Vgs 게이트 소스 전압
5 V
Id-연속-드레인-전류
- 12 A
Vds-드레인-소스-고장-전압
- 8 V
Rds-On-Drain-Source-Resistance
13 mOhms
트랜지스터 극성
P-채널
Qg-Gate-Charge
33 nC
순방향 트랜스컨덕턴스-최소
37 S
Tags
SIA427D, SIA427, SIA42, SIA4, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK® SC-70-6
***ical
Trans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
***nell
MOSFET, P CH, -8V, -12A, POWERPAK SC70; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:-1.2V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC70; No. of Pins:6; MSL:-
SiA427DJ 8V TrenchFET® Power MOSFETs
Vishay Siliconix SiA427DJ 8V TrenchFET® power MOSFETs have the lowest on-resistance for a p-channel device in the thermally enhanced PowerPAK® SC-70 2mm by 2mm footprint area. The on-resistance of the Vishay Siliconix SiA427DJ is up to 47% lower than the closest competing p-channel device. The 1.2V low on-resistance rating of SiA427DJ TrenchFET power MOSFETs makes them ideal for low bus voltages. Applications using a 1.2V power bus will also benefit from the MOSFET's low on-resistance at 1.5V and 1.8V as power line fluctuate, allowing the SiA427DJ to provide the best overall power savings. The utral-small PowerPAK SC-70 package of the Vishay Siliconix SiA427DJ is optimized for small handheld electronics. It is ideal for load switches in cell phones, smart phones, MP3 players, digital cameras, and more. Learn MoreView entire Vishay Siliconix Power MOSFET line
부분 # 제조 설명 재고 가격
SIA427DJ-T1-GE3
DISTI # V72:2272_09216832
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
2777
  • 1000:$0.1968
  • 500:$0.2422
  • 250:$0.2666
  • 100:$0.2756
  • 25:$0.3422
  • 10:$0.3437
  • 1:$0.4261
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
24916In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
24916In Stock
  • 1000:$0.2408
  • 500:$0.3116
  • 100:$0.4249
  • 10:$0.5670
  • 1:$0.6700
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 8V 12A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
24000In Stock
  • 3000:$0.2131
SIA427DJ-T1-GE3
DISTI # 30150538
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant
2777
  • 1000:$0.1968
  • 500:$0.2422
  • 250:$0.2666
  • 100:$0.2756
  • 37:$0.3422
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA427DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1809
  • 6000:$0.1759
  • 12000:$0.1689
  • 18000:$0.1639
  • 30000:$0.1599
SIA427DJ-T1-GE3
DISTI # SIA427DJ-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 8V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA427DJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SIA427DJ-T1-GE3
    DISTI # 69W7155
    Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -12A, POWERPAK SC70-6,Transistor Polarity:P Channel,Continuous Drain Current Id:-12A,Drain Source Voltage Vds:-8V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:-1.2V,Threshold Voltage Vgs:350mV, RoHS Compliant: Yes0
      SIA427DJ-T1-GE3.
      DISTI # 30AC0109
      Vishay IntertechnologiesP-CHANNEL 8-V (D-S) MOSFET , ROHS COMPLIANT: NO0
      • 1:$0.2090
      • 3000:$0.2090
      SIA427DJ-T1-GE3Vishay IntertechnologiesSingle P-Channel 8 V 0.013 Ohm 33 nC SMT Power Mosfet - PowerPAK SC-70-6
      RoHS: Compliant
      3000Reel
      • 3000:$0.1720
      SIA427DJ-T1-GE3
      DISTI # 781-SIA427DJ-T1-GE3
      Vishay IntertechnologiesMOSFET 8V 12A 19W 13mohms @ 4.5V
      RoHS: Compliant
      197
      • 1:$0.6000
      • 10:$0.4520
      • 100:$0.3360
      • 500:$0.2760
      • 1000:$0.2130
      • 3000:$0.2090
      SIA427DJ-T1-GE3Vishay Siliconix12 A, 8 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET576
      • 251:$0.1680
      • 57:$0.2400
      • 1:$0.4800
      SIA427DJ-T1-GE3Vishay Semiconductors12 A, 8 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET9
      • 1:$0.4800
      SIA427DJ-T1-GE3
      DISTI # 2459389
      Vishay IntertechnologiesMOSFET, P CHANNEL, -8V, -12A, POWERPAK S
      RoHS: Compliant
      0
      • 1:$0.9500
      • 10:$0.7160
      • 100:$0.5320
      • 500:$0.4370
      • 1000:$0.3380
      • 3000:$0.3310
      SIA427DJ-T1-GE3Vishay IntertechnologiesMOSFET 8V 12A 19W 13mohms @ 4.5V
      RoHS: Compliant
      Americas -
      • 3000:$0.1700
      • 6000:$0.1610
      • 12000:$0.1560
      • 24000:$0.1530
      SIA427DJ-T1-GE3
      DISTI # C1S803601298676
      Vishay IntertechnologiesMOSFETs2877
      • 250:$0.2658
      • 100:$0.2747
      • 25:$0.3407
      • 10:$0.3422
      영상 부분 # 설명
      SIA427DJ-T1-GE3

      Mfr.#: SIA427DJ-T1-GE3

      OMO.#: OMO-SIA427DJ-T1-GE3

      MOSFET 8V 12A 19W 13mohms @ 4.5V
      SIA427DJ-T1-GE3-CUT TAPE

      Mfr.#: SIA427DJ-T1-GE3-CUT TAPE

      OMO.#: OMO-SIA427DJ-T1-GE3-CUT-TAPE-1190

      신규 및 오리지널
      SIA427DJ

      Mfr.#: SIA427DJ

      OMO.#: OMO-SIA427DJ-1190

      신규 및 오리지널
      SIA427DJ-T1-GE3

      Mfr.#: SIA427DJ-T1-GE3

      OMO.#: OMO-SIA427DJ-T1-GE3-VISHAY

      MOSFET P-CH 8V 12A SC-70-6
      유효성
      재고:
      Available
      주문 시:
      3500
      수량 입력:
      SIA427DJ-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.23
      US$0.23
      10
      US$0.22
      US$2.17
      100
      US$0.21
      US$20.52
      500
      US$0.19
      US$96.90
      1000
      US$0.18
      US$182.40
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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