NGTB40N120LWG

Mfr. #:: NGTB40N120LWG
제조사:: ON Semiconductor
설명:: IGBT Transistors 1200V/40A FS1 IGBT
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NGTB40N120LWG 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NGTB40N120LWG Datasheet NGTB40N120LWG Datasheet (P4-P6)NGTB40N120LWG Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-247

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 1200 V

수집기-이미터 포화 전압:: 1.9 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 80 A

Pd - 전력 손실:: 260 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: NGTB40N120L

포장:: 튜브

상표:: 온세미컨덕터

게이트-이미터 누설 전류:: 200 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 30

하위 카테고리:: IGBT

단위 무게:: 0.229281 oz

Tags: NGTB40N12, NGTB40N1, NGTB40, NGTB4, NGTB, NGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB40N120LWG 설명

***ical: Trans IGBT Chip N-CH 1200V 80A 260000mW 3-Pin(3+Tab) TO-247 Tube

***ark: Igbt Single Transistor, 80 A, 1.9 V, 260 W, 1.2 Kv, To-247, 3

***ied Electronics & Automation: NGTB40N120LWG; IGBT Transistor; 80 A 1200 V; 3-Pin TO-247

***p One Stop Global: Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Rail

***Semiconductor: IGBT 1200V 40A FS1 Gen Mkt

***Components: IGBT 1200V 40A TO247

***ment14 APAC: Prices include import duty and tax. IGBT, 1200V, 40A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:260W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C; Transistor Type:IGBT

***nell: IGBT, 1200V, 40A, TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.9V; Dissipazione di Potenza Pd:260W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-55°C; Tipo di Transistor:IGBT

Market price

부분 #	제조	설명	재고	가격
NGTB40N120LWG DISTI # NGTB40N120LWG-ND	ON Semiconductor	IGBT 1200V 40A TO247 RoHS: Compliant Min Qty: 90 Container: Tube	Limited Supply - Call
NGTB40N120LWG DISTI # NGTB40N120LWG	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: NGTB40N120LWG) Min Qty: 93 Container: Bulk	Americas - 0	930:$3.2900 279:$3.3900 465:$3.3900 93:$3.4900 186:$3.4900
NGTB40N120LWG DISTI # 70341226	ON Semiconductor	NGTB40N120LWG,IGBT Transistor,80 A 1200 V,3-Pin TO-247 RoHS: Compliant	0	10:$4.8200 50:$4.5900 100:$4.3600 250:$4.1400
NGTB40N120LWG	ON Semiconductor	Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant	2626	1000:$3.5500 500:$3.7400 100:$3.8900 25:$4.0600 1:$4.3700
NGTB40N120LWG DISTI # 2321665	ON Semiconductor	IGBT, 1200V, 40A, TO-247-3 RoHS: Compliant	0	2500:$4.8800 1000:$5.1000 500:$5.4200 250:$6.0000 100:$6.8300 25:$7.5900 10:$8.7600 1:$10.0500

NGTB40N120LWG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes