APTGT200A120D3G

Mfr. #:: APTGT200A120D3G
제조사:: Microchip / Microsemi
설명:: IGBT Modules DOR CC7014
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: APTGT200A120D3G 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 마이크로칩

제품 카테고리:: IGBT 모듈

RoHS:: Y

제품:: IGBT 실리콘 모듈

구성:: 듀얼

컬렉터-이미터 전압 VCEO 최대:: 1.2 kV

수집기-이미터 포화 전압:: 1.7 V

25C에서 연속 수집기 전류:: 300 A

게이트-이미터 누설 전류:: 400 nA

Pd - 전력 손실:: 1.05 kW

패키지/케이스:: D3-11

최소 작동 온도:: - 40 C

최대 작동 온도:: + 125 C

포장:: 대부분

상표:: 마이크로칩 / 마이크로세미

장착 스타일:: 섀시 마운트

최대 게이트 이미터 전압:: 20 V

상품 유형:: IGBT 모듈

공장 팩 수량:: 1

하위 카테고리:: IGBT

Tags: APTGT200A12, APTGT200A1, APTGT200A, APTGT200, APTGT20, APTGT2, APTGT, APTG, APT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

APTGT200A120D3G 설명

*** Stop Electro: Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel

***ark: Pm-Igbt-Tfs-D3 D3 Box Rohs Compliant: Yes |Microchip APTGT200A120D3G

***el Electronic: Trans IGBT Module N-CH 1.2KV 300A 7-Pin Case D-3

***rochip SCT: High Voltage Power Module, Phase leg, 1200V, RoHS

***DA Technology Co., Ltd.: Product Description Demo for Development.

***i-Key: IGBT MODULE TRENCH PHASE LEG D3

***el Electronic: Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

*** Electronic Components: IGBT Modules 1200V 200A SINGLE

***trelec: IGBT module Connection: 2 x M6, 3 x M4 Fastening: 4 x M6 Configuration: Single Housing type: 62 mm Collector-emitter saturation voltage: 3.1 V

***el Electronic: Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

***ronik: IGBT-Mod. 150A 1200V 2,5kV 62mm

***trelec: IGBT module Connection: 3 x M6 Fastening: 4 x M6 Configuration: Half-Bridge Housing type: 62 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 17 mJ Energy dissipation during turn-off time: 18 mJ

***ical: Trans IGBT Module N-CH 1200V 275A 1400000mW 7-Pin 62MM Tray

*** Electronics: IGBT Array & Module Transistor, N Channel, 275 A, 3.2 V, 1.4 kW, 1.2 kV, Module

***ark: Igbt, Module, N-Ch, 1.2Kv, 275A; Transistor Polarity:N Channel; Dc Collector Current:275A; Collector Emitter Saturation Voltage Vce(On):3.2V; Power Dissipation Pd:1.4Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes |Infineon FF200R12KS4HOSA1

***ineon: Our well-known 62 mm 1200V dual IGBT modules with the fast IGBT2 for high-frequency switching are the right choice for your design. | Summary of Features: High Short Circuit Capability; Self Limiting Short Circuit Current; Low Switching Losses; Unbeatable Robustness; V(CEsat) with positive Temperature Coefficient; Package with CTI > 400; High Creepage and Clearance Distances; Isolated Base Plate; Copper Base Plate; Standard Housing | Benefits: PrimeSTACKs available for fast development with minimum effort; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding

***ical: Trans IGBT Chip N-CH 1200V 215A 625000mW 4-Pin SOT-227 Tube

***ure Electronics: APT150GNxx Series 1200 V 215 A 55 ns Chassis Mount IGBT - ISOTOP

***rochip: IGBT Fieldstop Low Frequency Combi 1200 V 150 A SOT-227

***ical: Trans IGBT Chip N-CH 1200V 215A 625000mW 4-Pin SOT-227 Tube

***rochip: IGBT Fieldstop Low Frequency Single 1200 V 150 A SOT-227

***ure Electronics: APT150GN120J Series 1200 V 215 A Trench Field Stop IGBT Module - ISOTOP®

***ical: Trans IGBT Module N-CH 1200V 220A 690000mW 7-Pin Case SP-6 Tube

***ark: Pm-Igbt-Tfs-Sp6C Sp6C Tube Rohs Compliant: Yes |Microchip APTGT150DU120G

*** Stop Electro: Insulated Gate Bipolar Transistor, 220A I(C), 1200V V(BR)CES, N-Channel

***rochip SCT: High Voltage Power Module, Dual common source, 1200V, RoHS

***i-Key: POWER MOD IGBT TRENCH DL SRC SP6

Market price

부분 #	제조	설명	재고	가격
APTGT200A120D3G DISTI # APTGT200A120D3G	Microchip Technology Inc	Trans IGBT Module N-CH 1.2KV 300A 7-Pin Case D3 - Boxed Product (Development Kits) (Alt: APTGT200A120D3G) RoHS: Compliant Min Qty: 100 Container: Box	Americas - 0	1000:$136.9900 500:$139.1900 300:$143.5900 200:$148.2900 100:$153.3900
APTGT200A120D3G DISTI # 494-APTGT200A120D3G	Microchip Technology Inc	IGBT Modules Power Module - IGBT RoHS: Compliant	0	100:$137.3900

관련 상품

영상	부분 #	설명
	Mfr.#: APTGT200A120G OMO.#: OMO-APTGT200A120G	IGBT Modules CC6105
	Mfr.#: APTGT200DU60TG OMO.#: OMO-APTGT200DU60TG	IGBT Modules DOR CC4135
	Mfr.#: APTGT200SK120G OMO.#: OMO-APTGT200SK120G	IGBT Modules DOR CC6160
	Mfr.#: APTGT200DA120G OMO.#: OMO-APTGT200DA120G	IGBT Modules DOR CC6109
	Mfr.#: APTGT200DH60G OMO.#: OMO-APTGT200DH60G	IGBT Modules DOR CC6114
	Mfr.#: APTGT200DU120G OMO.#: OMO-APTGT200DU120G	IGBT Modules CC6074
	Mfr.#: APTGT200A120D3G OMO.#: OMO-APTGT200A120D3G	IGBT Modules DOR CC7014
	Mfr.#: APTGT200TL60G OMO.#: OMO-APTGT200TL60G	IGBT Modules DOR CC6178
	Mfr.#: APTGT200A120D3 OMO.#: OMO-APTGT200A120D3-1190	신규 및 오리지널
	Mfr.#: APTGT200A120G OMO.#: OMO-APTGT200A120G-MICROSEMI	Trans IGBT Module N-CH 1.2KV 280A 7-Pin Case SP-6

유효성

재고:: Available
주문 시:: 5000
수량 입력:

APTGT200A120D3G의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

100: ~~US$162.02~~; ~~US$16 202.00~~

시작

APTGT200A12 3
APTGT200A1 4
APTGT200A 6
APTGT200 21
APTGT20 23
APTGT2 28
APTGT 205
APTG 349
APT 2789

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More Newest Products

APTGT200A120D3G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes