IPB014N06NATMA1

Mfr. #:: IPB014N06NATMA1
제조사:: Infineon Technologies
설명:: IGBT Transistors MOSFET N-Ch 60V 180A D2PAK-6
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPB014N06NATMA1 데이터 시트
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추가 정보:: IPB014N06NATMA1 추가 정보

제품 속성
속성 값

제조사: 인피니언 테크놀로지스

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

시리즈: IPB014N06

포장: 릴

부분 별칭: IPB014N06N IPB014N06NXT SP000917408

단위 무게: 0.056438 oz

장착 스타일: SMD/SMT

상표명: 옵티모스

패키지 케이스: TO-263-7

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 214 W

최대 작동 온도: + 175 C

최소 작동 온도: - 55 C

가을철: 14 ns

상승 시간: 18 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 180 A

Vds-드레인-소스-고장-전압: 60 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.8 V

Rds-On-Drain-Source-Resistance: 1.4 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 47 ns

일반 켜기 지연 시간: 22 ns

Qg-Gate-Charge: 106 nC

순방향 트랜스컨덕턴스-최소: 230 S

Tags: IPB014, IPB01, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB014N06NATMA1 설명

***Components: In a Pack of 4, N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK Infineon IPB014N06NATMA1

***ure Electronics: Single N-Channel 60 V 1.4 mOhm 106 nC OptiMOS Power Mosfet - D2PAK-7

***ical: Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) TO-263

***et Europe: Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R

***an P&S: 60V,1.4mΩ,180A,N-Channel Power MOSFET

***i-Key: MOSFET N-CH 60V 34A TO263-7

***ronik: N-CH 60V 180A 1,4mOhm TO263-7

***ark: Mosfet, N-Ch, 60V, 180A, To-263-7; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0012Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 60V, 180A, TO-263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:214W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, N-CH, 60V, 180A, TO-263-7; Polarità Transistor:Canale N; Corrente Continua di Drain Id:180A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0012ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:214W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

IPB014N06NATMA1 추가 정보

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

20-60V OptiMOS Power MOSFETs: Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Market price

부분 #	제조	설명	재고	가격
IPB014N06NATMA1 DISTI # V72:2272_06377743	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	961	500:$2.2330 250:$2.4070 100:$2.6440 25:$2.7320 10:$3.0360 1:$3.9314
IPB014N06NATMA1 DISTI # V36:1790_06377743	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	0	1000:$1.5890
IPB014N06NATMA1 DISTI # IPB014N06NATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 34A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	90In Stock	500:$2.4484 100:$2.8761 10:$3.5100 1:$3.9100
IPB014N06NATMA1 DISTI # IPB014N06NATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 34A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	90In Stock	500:$2.4484 100:$2.8761 10:$3.5100 1:$3.9100
IPB014N06NATMA1 DISTI # IPB014N06NATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 34A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	5000:$1.8330 2000:$1.9045 1000:$2.0048
IPB014N06NATMA1 DISTI # 32011835	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.6558
IPB014N06NATMA1 DISTI # 31274162	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	961	500:$2.2330 250:$2.4070 100:$2.6440 25:$2.7320 10:$3.0360 5:$3.9314
IPB014N06NATMA1 DISTI # 32334089	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R RoHS: Compliant	336	10000:$1.3163 4000:$1.3761 1000:$1.4751
IPB014N06NATMA1 DISTI # IPB014N06NATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Bulk (Alt: IPB014N06NATMA1) RoHS: Compliant Min Qty: 248 Container: Bulk	Americas - 0	2480:$1.1900 744:$1.2900 1240:$1.2900 248:$1.3900 496:$1.3900
IPB014N06NATMA1 DISTI # IPB014N06NATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB014N06NATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$1.2900 4000:$1.3900 6000:$1.3900 1000:$1.4900 2000:$1.4900
IPB014N06NATMA1 DISTI # SP000917408	Infineon Technologies AG	Trans MOSFET N-CH 60V 180A 7-Pin TO-263 T/R (Alt: SP000917408) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.1900 6000:€1.2900 4000:€1.3900 2000:€1.4900 1000:€1.7900
IPB014N06NATMA1 DISTI # 97Y1819	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes	59	500:$2.2800 250:$2.5500 100:$2.6900 50:$2.8200 25:$2.9600 10:$3.0900 1:$3.6500
IPB014N06N DISTI # 726-IPB014N06N	Infineon Technologies AG	MOSFET N-Ch 60V 180A D2PAK-6 RoHS: Compliant	334	1:$3.6100 10:$3.0600 100:$2.6600 250:$2.5200 500:$2.2600 1000:$1.9100 2000:$1.8100
IPB014N06NATMA1 DISTI # 726-IPB014N06NATMA1	Infineon Technologies AG	MOSFET N-Ch 60V 180A D2PAK-6 RoHS: Compliant	104	1:$3.6100 10:$3.0600 100:$2.6600 250:$2.5200 500:$2.2600 1000:$1.9100 2000:$1.8100
IPB014N06NATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 34A I(D), 60V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 RoHS: Compliant	8	1000:$1.3300 500:$1.4000 100:$1.4600 25:$1.5200 1:$1.6400
IPB014N06NATMA1 DISTI # 9062921P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 180A OPTIMOS TO263, RL	296	200:£1.7380 80:£1.8750 40:£2.0080 8:£2.1830
IPB014N06NATMA1 DISTI # 2617426	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7 RoHS: Compliant	59	500:$3.9200 100:$4.8400 10:$5.9000 1:$6.6100
IPB014N06NATMA1 DISTI # 2617426	Infineon Technologies AG	MOSFET, N-CH, 60V, 180A, TO-263-7	1277	500:£1.7400 250:£1.9400 100:£2.0500 10:£2.3500 1:£3.1200

영상	부분 #	설명
	Mfr.#: IPB014N06N OMO.#: OMO-IPB014N06N	MOSFET N-Ch 60V 180A D2PAK-6
	Mfr.#: IPB014N06NATMA1 OMO.#: OMO-IPB014N06NATMA1	MOSFET N-Ch 60V 180A D2PAK-6
	Mfr.#: IPB014N06N OMO.#: OMO-IPB014N06N-1190	MOSFET N-Ch 60V 180A D2PAK-6
	Mfr.#: IPB014N06N3G OMO.#: OMO-IPB014N06N3G-1190	신규 및 오리지널
	Mfr.#: IPB014N06NTR OMO.#: OMO-IPB014N06NTR-1190	신규 및 오리지널
	Mfr.#: IPB014N06NATMA1 OMO.#: OMO-IPB014N06NATMA1-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET N-Ch 60V 180A D2PAK-6

IPB014N06NATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes