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IGW50N65F5FKSA1

IGW50N65F5FKSA1
Mfr. #:
IGW50N65F5FKSA1
제조사:
Infineon Technologies
설명:
IGBT Transistors IGBT PRODUCTS
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IGW50N65F5FKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IGW50N65F5FKSA1 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
IGBT - 싱글
시리즈
TrenchStopR
포장
튜브
부분 별칭
IGW50N65F5 SP000973426
단위 무게
1.340411 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
PG-TO247-3
구성
하나의
파워맥스
305W
역복구-시간-trr
-
전류 수집기 Ic-Max
80A
Voltage-Collector-Emitter-Breakdown-Max
650V
IGBT형
-
전류 수집기 펄스 Icm
150A
Vce-on-Max-Vge-Ic
2.1V @ 15V, 50A
스위칭 에너지
490μJ (on), 160μJ (off)
게이트 차지
120nC
Td-on-off-25°C
21ns/175ns
시험조건
400V, 25A, 12 Ohm, 15V
Pd 전력 손실
305 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 40 C
컬렉터-이미터-전압-VCEO-최대
650 V
컬렉터-이미터-포화-전압
1.6 V
연속 수집기 전류 at-25-C
80 A
게이트 이미 터 누설 전류
100 nA
최대 게이트 이미 터 전압
20 V
연속 수집기 전류 Ic-Max
56 A
Tags
IGW50N65F, IGW50N65, IGW50N, IGW5, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IGW50N65F5FKSA1 IGBT, 50 A 650 V, 3-Pin TO-247
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
***ical
Trans IGBT Chip N-CH 650V 80A
***i-Key
IGBT 650V 80A 305W PG-TO247-3
***ronik
IGBT 650V 50A 1.6V TO247-3
***ark
IGBT, 650V, 50A, TO247-3
***ukat
650V 80A 305W TO247
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 50A, TO247-3; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:305W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 5 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-40°C; Transistor Type:IGBT
***nell
IGBT, 650V, 50A, TO247-3; Corrente di Collettore CC:50A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:305W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
부분 # 제조 설명 재고 가격
IGW50N65F5FKSA1
DISTI # V99:2348_06378872		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		5
  • 100:$2.3350
  • 10:$2.7260
  • 1:$3.1920
IGW50N65F5FKSA1
DISTI # IGW50N65F5FKSA1-ND		Infineon Technologies AGIGBT 650V 80A 305W PG-TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		30In Stock
  • 1200:$2.6891
  • 720:$3.1885
  • 240:$3.7455
  • 10:$4.5710
  • 1:$5.0900
IGW50N65F5FKSA1
DISTI # 32700397		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		480
  • 5:$2.1655
IGW50N65F5FKSA1
DISTI # 26986810		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		5
  • 100:$2.3350
  • 10:$2.7260
  • 3:$3.1920
IGW50N65F5FKSA1
DISTI # SP000973426		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: SP000973426)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 480
  • 1:€2.5900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.1900
  • 100:€2.0900
  • 500:€1.9900
  • 1000:€1.8900
IGW50N65F5FKSA1
DISTI # IGW50N65F5FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N65F5FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$2.5900
  • 480:$2.4900
  • 960:$2.3900
  • 1440:$2.2900
  • 2400:$2.2900
IGW50N65F5
DISTI # 726-IGW50N65F5-ES		Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant		216
  • 1:$4.8400
  • 10:$4.1100
  • 100:$3.5600
  • 250:$3.3800
  • 500:$3.0300
IGW50N65F5FKSA1
DISTI # 726-IGW50N65F5FKSA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		0
  • 1:$4.8400
  • 10:$4.1100
  • 100:$3.5600
  • 250:$3.3800
  • 500:$3.0300
IGW50N65F5FKSA1
DISTI # 1107426P		Infineon Technologies AGIGBT TRENCHSTOP N-CHANNEL 650V 50A TO247, TU3068
  • 400:£1.8450
  • 200:£1.8900
  • 80:£1.9400
  • 20:£2.0930
IGW50N65F5FKSA1
DISTI # IGW50N65F5		Infineon Technologies AG650V 80A 305W TO247
RoHS: Compliant		230
  • 1:€5.9500
  • 10:€2.9500
  • 50:€1.9500
  • 100:€1.8800
IGW50N65F5FKSA1
DISTI # 2363279		Infineon Technologies AGIGBT, 650V, 50A, TO247-3
RoHS: Compliant		88
  • 500:£1.5700
  • 250:£1.7400
  • 100:£1.8400
  • 10:£2.1200
  • 1:£2.8100
IGW50N65F5FKSA1
DISTI # XSKDRABS0030187		Infineon Technologies AG 
RoHS: Compliant		720 in Stock0 on Order
  • 720:$3.2400
  • 240:$3.4800
영상 부분 # 설명
IGW50N60T

Mfr.#: IGW50N60T

OMO.#: OMO-IGW50N60T

 IGBT Transistors LOW LOSS IGBT TECH 600V 50A
IGW50N65H5AXKSA1

Mfr.#: IGW50N65H5AXKSA1

OMO.#: OMO-IGW50N65H5AXKSA1

 IGBT Transistors IGBT PRODUCTS
IGW50N60 G50N60

Mfr.#: IGW50N60 G50N60

OMO.#: OMO-IGW50N60-G50N60-1190

 신규 및 오리지널
IGW50N60H3 , 2SC5183

Mfr.#: IGW50N60H3 , 2SC5183

OMO.#: OMO-IGW50N60H3-2SC5183-1190

 신규 및 오리지널
IGW50N60H3S

Mfr.#: IGW50N60H3S

OMO.#: OMO-IGW50N60H3S-1190

 신규 및 오리지널
IGW50N60N

Mfr.#: IGW50N60N

OMO.#: OMO-IGW50N60N-1190

 신규 및 오리지널
IGW50N65H5,G50H655

Mfr.#: IGW50N65H5,G50H655

OMO.#: OMO-IGW50N65H5-G50H655-1190

 신규 및 오리지널
IGW50N65H5/F5

Mfr.#: IGW50N65H5/F5

OMO.#: OMO-IGW50N65H5-F5-1190

 신규 및 오리지널
IGW50N65H5AXKSA1

Mfr.#: IGW50N65H5AXKSA1

OMO.#: OMO-IGW50N65H5AXKSA1-INFINEON-TECHNOLOGIES

 IGBT 650V TO247-3
IGW50N60H3

Mfr.#: IGW50N60H3

OMO.#: OMO-IGW50N60H3-126

 IGBT Transistors 600V 50A 333W
유효성
재고:
Available
주문 시:
4500
수량 입력:
IGW50N65F5FKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.36
US$2.36
10
US$2.24
US$22.37
100
US$2.12
US$211.95
500
US$2.00
US$1 000.90
1000
US$1.88
US$1 884.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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