SIHB33N60EF-GE3

SIHB33N60EF-GE3
Mfr. #:
SIHB33N60EF-GE3
제조사:
Vishay
설명:
IGBT Transistors MOSFET N-Channel 600V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHB33N60EF-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SIHB33N60EF-GE3 추가 정보
제품 속성
속성 값
제조사
비쉐이/실리코닉스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
단위 무게
0.068654 oz
장착 스타일
SMD/SMT
상표명
EF 시리즈
패키지 케이스
TO-263-3
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
278 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
48 ns
상승 시간
43 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
33 A
Vds-드레인-소스-고장-전압
600 V
Vgs-th-Gate-Source-Threshold-Voltage
2 V
Rds-On-Drain-Source-Resistance
98 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
161 ns
일반 켜기 지연 시간
28 ns
Qg-Gate-Charge
155 nC
Tags
SIHB33, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 33A 3-Pin D2PAK
***ure Electronics
600V, 33A, 98MOHM, D2PAK, EF SERIES
***i-Key
MOSFET N-CH 600V 33A TO-263
***ark
N-Channel 600V
***
N-CH 600V T0-263
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
부분 # 제조 설명 재고 가격
SIHB33N60EF-GE3
DISTI # SIHB33N60EF-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 33A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk
934In Stock
  • 1000:$3.8610
  • 500:$4.4330
  • 100:$5.2910
  • 10:$6.4350
  • 1:$7.1500
SIHB33N60EF-GE3
DISTI # SIHB33N60EF-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK - Tape and Reel (Alt: SIHB33N60EF-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.6900
  • 2000:$3.5900
  • 4000:$3.4900
  • 6000:$3.3900
  • 10000:$3.2900
SIHB33N60EF-GE3
DISTI # 78-SIHB33N60EF-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
640
  • 1:$6.5000
  • 10:$5.8600
  • 25:$5.3400
  • 100:$4.8200
  • 250:$4.4300
  • 500:$4.3500
SIHB33N60EF-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
Americas -
  • 3000:$3.3280
영상 부분 # 설명
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3

MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3

MOSFET N-Channel 600V
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3

MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3-VISHAY

IGBT Transistors MOSFET N-Channel 600V
SIHB33N60E-E3

Mfr.#: SIHB33N60E-E3

OMO.#: OMO-SIHB33N60E-E3-317

RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3-VISHAY

RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60EF-GE3-CUT TAPE

Mfr.#: SIHB33N60EF-GE3-CUT TAPE

OMO.#: OMO-SIHB33N60EF-GE3-CUT-TAPE-1190

신규 및 오리지널
SIHB33N60E

Mfr.#: SIHB33N60E

OMO.#: OMO-SIHB33N60E-1190

N-CH 600V 99mOhm 33A TO263
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3-VISHAY

MOSFET N-CH 600V 33A TO-263
SIHB33N60ET5-GE3

Mfr.#: SIHB33N60ET5-GE3

OMO.#: OMO-SIHB33N60ET5-GE3-VISHAY

MOSFET N-CH 600V 33A TO263
유효성
재고:
Available
주문 시:
4500
수량 입력:
SIHB33N60EF-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$4.41
US$4.41
10
US$4.19
US$41.94
100
US$3.97
US$397.33
500
US$3.75
US$1 876.30
1000
US$3.53
US$3 531.80
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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