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SIHG22N50D-GE3

SIHG22N50D-GE3
Mfr. #:
SIHG22N50D-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 500V Vds 30V Vgs TO-247AC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHG22N50D-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG22N50D-GE3 DatasheetSIHG22N50D-GE3 Datasheet (P4-P6)SIHG22N50D-GE3 Datasheet (P7-P8)
ECAD Model:
추가 정보:
SIHG22N50D-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247AC-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
500 V
Id - 연속 드레인 전류:
22 A
Rds On - 드레인 소스 저항:
230 mOhms
Vgs th - 게이트 소스 임계 전압:
5 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
49 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
312 W
구성:
하나의
채널 모드:
상승
포장:
튜브
키:
20.82 mm
길이:
15.87 mm
시리즈:
D
너비:
5.31 mm
상표:
비쉐이 / 실리콘닉스
가을 시간:
40 ns
상품 유형:
MOSFET
상승 시간:
42 ns
공장 팩 수량:
500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
47 ns
일반적인 켜기 지연 시간:
21 ns
단위 무게:
1.340411 oz
Tags
SIHG22N5, SIHG22, SIHG2, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
N-Channel MOSFET, 22 A, 500 V, 3-Pin TO-247AC Vishay SiHG22N50D-GE3
***ure Electronics
Single N-Channel 500 V 0.23 Ohm 98 nC 312 W Silicon Flange Mount Mosfet TO-247AC
***et Europe
Trans MOSFET N-CH 500V 22A 3-Pin TO-247AC
***ical
Trans MOSFET N-CH 500V 22A
***i-Key
MOSFET N-CH 500V 22A TO-247AC
***ark
MOSFET, N-CH, 500V, 22A, TO-247AC-3; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N-CH, 500V, 22A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.185ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
부분 # 제조 설명 재고 가격
SIHG22N50D-GE3
DISTI # V99:2348_09219131		Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant		500
  • 1000:$2.3720
  • 500:$2.7350
  • 100:$3.0780
  • 10:$3.5890
  • 1:$4.1650
SIHG22N50D-GE3
DISTI # SIHG22N50D-GE3-ND		Vishay SiliconixMOSFET N-CH 500V 22A TO-247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		18In Stock
  • 1000:$2.6861
  • 500:$3.1849
  • 100:$3.9332
  • 10:$4.7970
  • 1:$5.3700
SIHG22N50D-GE3
DISTI # 25872833		Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant		500
  • 500:$2.7350
  • 100:$3.0780
  • 10:$3.5890
  • 3:$4.1650
SIHG22N50D-GE3
DISTI # 27549453		Vishay IntertechnologiesN-CHANNEL 500V
RoHS: Compliant		75
  • 29:$2.2125
SIHG22N50D-GE3
DISTI # SIHG22N50D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 22A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG22N50D-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$2.4900
  • 1000:$2.3900
  • 2000:$2.2900
  • 3000:$2.1900
  • 5000:$2.1900
SIHG22N50D-GE3
DISTI # 62W0515		Vishay IntertechnologiesMOSFET Transistor, N Channel, 22 A, 500 V, 0.185 ohm, 10 V, 3 V RoHS Compliant: Yes75
  • 1:$1.7700
  • 10:$1.7700
  • 25:$1.7700
  • 50:$1.7700
  • 100:$1.7700
  • 500:$1.7700
  • 1000:$1.7700
  • 2500:$1.7700
SIHG22N50D-GE3
DISTI # 78-SIHG22N50D-GE3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-247AC
RoHS: Compliant		500
  • 1:$4.8900
  • 10:$4.0500
  • 100:$3.3400
  • 250:$3.2300
  • 500:$2.9000
  • 1000:$2.4500
  • 2500:$2.3200
SIHG22N50D-GE3
DISTI # 7879197P		Vishay IntertechnologiesMOSFET N-CH 500V 22A LOW CAP. TO247AC, RL42
  • 10:£2.5300
  • 20:£2.5200
  • 50:£2.5100
  • 250:£2.3400
SIHG22N50DGE3Vishay IntertechnologiesPower Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		Europe - 375
    SIHG22N50DGE3Vishay Siliconix 
    RoHS: Compliant    		Europe - 125
      SIHG22N50D-GE3
      DISTI # 2283626      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 22A, TO-247AC
      RoHS: Compliant      		0
      • 1:$7.7400
      • 10:$6.4100
      • 100:$5.2900
      • 250:$5.1200
      • 500:$4.5900
      • 1000:$3.8800
      • 2500:$3.6800
      • 5000:$3.5500
      SIHG22N50D-GE3
      DISTI # C1S803601945738      		Vishay IntertechnologiesTrans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC
      RoHS: Compliant      		500
      • 500:$2.7350
      • 100:$3.0780
      • 10:$3.5890
      • 1:$4.1650
      SIHG22N50D-GE3
      DISTI # 2283626      		Vishay IntertechnologiesMOSFET, N-CH, 500V, 22A, TO-247AC
      RoHS: Compliant      		0
      • 1:£3.7000
      • 10:£2.5400
      • 100:£2.4500
      • 250:£2.3600
      • 500:£2.2200
      영상 부분 # 설명
      SIHG22N50D-E3

      Mfr.#: SIHG22N50D-E3

      OMO.#: OMO-SIHG22N50D-E3

      		 MOSFET 500V Vds 30V Vgs TO-247AC
      SIHG22N60E-GE3

      Mfr.#: SIHG22N60E-GE3

      OMO.#: OMO-SIHG22N60E-GE3

      		 MOSFET 600V Vds 30V Vgs TO-247AC
      SIHG22N60EF-GE3

      Mfr.#: SIHG22N60EF-GE3

      OMO.#: OMO-SIHG22N60EF-GE3

      		 MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode
      SIHG22N60EL-GE3

      Mfr.#: SIHG22N60EL-GE3

      OMO.#: OMO-SIHG22N60EL-GE3

      		 MOSFET 600V Vds 30V Vgs TO-247AC
      SIHG22N60AEL-GE3

      Mfr.#: SIHG22N60AEL-GE3

      OMO.#: OMO-SIHG22N60AEL-GE3-VISHAY

      		 MOSFET N-CHAN 600V
      SIHG22N50D-E3

      Mfr.#: SIHG22N50D-E3

      OMO.#: OMO-SIHG22N50D-E3-VISHAY

      		 MOSFET N-CH 500V 22A TO-247AC
      SIHG22N50DGE3

      Mfr.#: SIHG22N50DGE3

      OMO.#: OMO-SIHG22N50DGE3-1190

      		 Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC
      SIHG22N60E-GE3

      Mfr.#: SIHG22N60E-GE3

      OMO.#: OMO-SIHG22N60E-GE3-VISHAY

      		 MOSFET N-CH 600V 21A TO247AC
      SIHG22N60S-E3,22N60

      Mfr.#: SIHG22N60S-E3,22N60

      OMO.#: OMO-SIHG22N60S-E3-22N60-1190

      		 신규 및 오리지널
      SIHG22N60AE-GE3

      Mfr.#: SIHG22N60AE-GE3

      OMO.#: OMO-SIHG22N60AE-GE3-VISHAY

      		 MOSFET N-CH 600V 20A TO247AC
      유효성
      재고:
      370
      주문 시:
      2353
      수량 입력:
      SIHG22N50D-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$4.88
      US$4.88
      10
      US$4.04
      US$40.40
      100
      US$3.33
      US$333.00
      250
      US$3.22
      US$805.00
      500
      US$2.89
      US$1 445.00
      1000
      US$2.44
      US$2 440.00
      2500
      US$2.31
      US$5 775.00
      5000
      US$2.23
      US$11 150.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
      시작
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