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IPD30N03S2L20ATMA1

IPD30N03S2L20ATMA1
Mfr. #:
IPD30N03S2L20ATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH 30V 30A TO252-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD30N03S2L20ATMA1 데이터 시트
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추가 정보:
IPD30N03S2L20ATMA1 추가 정보
제품 속성
속성 값
Tags
IPD30N03S2, IPD30N03, IPD30N0, IPD30N, IPD30, IPD3, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 2500, N-Channel MOSFET, 30 A, 30 V, 3-Pin DPAK Infineon IPD30N03S2L20ATMA1
***ical
Trans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
***et Europe
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252
***i-Key
MOSFET N-CH 30V 30A TO252-3
***ronik
N-CH 30V 30A 20mOhm TO252
***ark
Mosfet, Aec-Q101, N-Ch, 30V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 30V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:60W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, AEC-Q101, CA-N, 30V, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0145ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.6V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Package (RoHS compliant); 100% Avalanche tested | Benefits: Low switching and conduction power losses for highest thermal efficiency; Robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T 40V addresses to small loads control switching (3-phase and H-bridge motors, electric pumps, etc. especially in combination with PWM control).; Body applications
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.
부분 # 제조 설명 재고 가격
IPD30N03S2L20ATMA1
DISTI # V36:1790_06391064		Infineon Technologies AGTrans MOSFET N-CH 30V 30A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500000:$0.3046
  • 1250000:$0.3048
  • 250000:$0.3166
  • 25000:$0.3353
  • 2500:$0.3383
IPD30N03S2L20ATMA1
DISTI # IPD30N03S2L20ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3181In Stock
  • 1000:$0.3845
  • 500:$0.4806
  • 100:$0.6080
  • 10:$0.7930
  • 1:$0.9000
IPD30N03S2L20ATMA1
DISTI # IPD30N03S2L20ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3181In Stock
  • 1000:$0.3845
  • 500:$0.4806
  • 100:$0.6080
  • 10:$0.7930
  • 1:$0.9000
IPD30N03S2L20ATMA1
DISTI # IPD30N03S2L20ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.2955
  • 12500:$0.3033
  • 5000:$0.3150
  • 2500:$0.3383
IPD30N03S2L20ATMA1
DISTI # IPD30N03S2L20ATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Bulk (Alt: IPD30N03S2L20ATMA1)
RoHS: Compliant
Min Qty: 1191
Container: Bulk		Americas - 0
  • 11910:$0.2659
  • 5955:$0.2709
  • 3573:$0.2809
  • 2382:$0.2909
  • 1191:$0.3019
IPD30N03S2L20ATMA1
DISTI # IPD30N03S2L20ATMA1		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD30N03S2L20ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3319
  • 15000:$0.3379
  • 10000:$0.3499
  • 5000:$0.3629
  • 2500:$0.3759
IPD30N03S2L20ATMA1
DISTI # SP000254466		Infineon Technologies AGTrans MOSFET N-CH 30V 30A 3-Pin(2+Tab) TO-252 (Alt: SP000254466)
RoHS: Compliant
Min Qty: 2500		Europe - 0
  • 25000:€0.3169
  • 15000:€0.3419
  • 10000:€0.3699
  • 5000:€0.4039
  • 2500:€0.4939
IPD30N03S2L20ATMA1
DISTI # 34AC1669		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 30V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0145ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V,Power RoHS Compliant: Yes617
  • 1000:$0.3600
  • 500:$0.3900
  • 250:$0.4190
  • 100:$0.4490
  • 50:$0.5320
  • 25:$0.6140
  • 10:$0.6960
  • 1:$0.8280
IPD30N03S2L20ATMA1
DISTI # 726-IPD30N03S2L20ATM		Infineon Technologies AGMOSFET N-Ch 30V 30A DPAK-2 OptiMOS
RoHS: Compliant		3168
  • 1:$0.8500
  • 10:$0.7320
  • 100:$0.5620
  • 500:$0.4960
  • 1000:$0.3920
  • 2500:$0.3470
  • 10000:$0.3340
IPD30N03S2L-20
DISTI # 726-IPD30N03S2L-20		Infineon Technologies AGMOSFET N-Ch 30V 30A DPAK-2 OptiMOS
RoHS: Compliant		3952
  • 1:$0.8500
  • 10:$0.7320
  • 100:$0.5620
  • 500:$0.4960
  • 1000:$0.3920
  • 2500:$0.3470
  • 10000:$0.3340
IPD30N03S2L20ATMA1Infineon Technologies AGPower Field-Effect Transistor, 30A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		86163
  • 1000:$0.2800
  • 500:$0.2900
  • 100:$0.3000
  • 25:$0.3200
  • 1:$0.3400
IPD30N03S2L20ATMA1
DISTI # 2781081		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 30V, TO-2521532
  • 500:£0.2660
  • 250:£0.3030
  • 100:£0.3400
  • 10:£0.5770
  • 1:£0.7160
IPD30N03S2L20ATMA1
DISTI # 2781081		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 30V, TO-252
RoHS: Compliant		617
  • 5000:$0.4580
  • 1000:$0.4830
  • 500:$0.5100
  • 250:$0.5900
  • 100:$0.6980
  • 25:$0.8550
  • 5:$0.9810
영상 부분 # 설명
IPD30N03S2L20ATMA1

Mfr.#: IPD30N03S2L20ATMA1

OMO.#: OMO-IPD30N03S2L20ATMA1

 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IPD30N03S2L-10

Mfr.#: IPD30N03S2L-10

OMO.#: OMO-IPD30N03S2L-10

 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IPD30N03S2L-20

Mfr.#: IPD30N03S2L-20

OMO.#: OMO-IPD30N03S2L-20

 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IPD30N03S4L09ATMA1

Mfr.#: IPD30N03S4L09ATMA1

OMO.#: OMO-IPD30N03S4L09ATMA1

 MOSFET N-CHANNEL_30/40V
IPD30N03S2L-07

Mfr.#: IPD30N03S2L-07

OMO.#: OMO-IPD30N03S2L-07-1190

 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IPD30N03S2L-08

Mfr.#: IPD30N03S2L-08

OMO.#: OMO-IPD30N03S2L-08-1190

 신규 및 오리지널
IPD30N03S2L-10

Mfr.#: IPD30N03S2L-10

OMO.#: OMO-IPD30N03S2L-10-1190

 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IPD30N03S2L-10G

Mfr.#: IPD30N03S2L-10G

OMO.#: OMO-IPD30N03S2L-10G-1190

 신규 및 오리지널
IPD30N03S2L-20

Mfr.#: IPD30N03S2L-20

OMO.#: OMO-IPD30N03S2L-20-1190

 MOSFET N-Ch 30V 30A DPAK-2 OptiMOS
IPD30N03S2L20ATMA1

Mfr.#: IPD30N03S2L20ATMA1

OMO.#: OMO-IPD30N03S2L20ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 30V 30A TO252-3
유효성
재고:
Available
주문 시:
4500
수량 입력:
IPD30N03S2L20ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.40
US$0.40
10
US$0.38
US$3.79
100
US$0.36
US$35.90
500
US$0.34
US$169.50
1000
US$0.32
US$319.10
시작
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