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IRF8513PBF

IRF8513PBF
Mfr. #:
IRF8513PBF
제조사:
Infineon / IR
설명:
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRF8513PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8513PBF DatasheetIRF8513PBF Datasheet (P4-P6)IRF8513PBF Datasheet (P7-P9)IRF8513PBF Datasheet (P10-P11)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
SO-8
채널 수:
2 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
8 A
Rds On - 드레인 소스 저항:
22.2 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
5.7 nC
Pd - 전력 손실:
1.5 W
구성:
듀얼
포장:
튜브
키:
1.75 mm
길이:
4.9 mm
트랜지스터 유형:
2 N-Channel
너비:
3.9 mm
상표:
인피니언 / IR
상품 유형:
MOSFET
공장 팩 수량:
95
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001555762
단위 무게:
0.019048 oz
Tags
IRF85, IRF8, IRF
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***ark
; Continuous Drain Current, Id:8A; On Resistance, Rds(on):15.5mohm; No. of Pins:8
***nell
DUAL N CH MOSFET, 30V, 8A, SOIC
***et
Trans MOSFET N-CH 30V 8A/11A 8-Pin SO
***ment14 APAC
MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
부분 # 제조 설명 재고 가격
IRF8513PBF
DISTI # IRF8513PBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 8A/11A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF8513PBF
    DISTI # 70018021    		Infineon Technologies AGMOSFET,DUAL N-CHANNEL,30V,11A,SO-8
    RoHS: Compliant    		0
    • 3800:$1.0600
    • 7600:$1.0390
    • 19000:$1.0070
    • 38000:$0.9650
    • 95000:$0.9010
    IRF8513PBF
    DISTI # 942-IRF8513PBF    		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
    RoHS: Compliant    		0
      IRF8513PBFInfineon Technologies AGDual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET Power Mosfet - SOIC-8
      RoHS: Compliant      		42Tube
      • 25:$0.4750
      • 300:$0.4150
      • 1250:$0.3600
      IRF8513PBFInternational Rectifier 
      RoHS: Compliant      		Europe - 455
        영상 부분 # 설명
        IRF8513PBF

        Mfr.#: IRF8513PBF

        OMO.#: OMO-IRF8513PBF

        		 MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
        IRF8513PBF

        Mfr.#: IRF8513PBF

        OMO.#: OMO-IRF8513PBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 8A/11A 8-SOIC
        IRF8513TRPBF

        Mfr.#: IRF8513TRPBF

        OMO.#: OMO-IRF8513TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 8A/11A 8-SOIC
        IRF8520

        Mfr.#: IRF8520

        OMO.#: OMO-IRF8520-1190

        		 신규 및 오리지널
        유효성
        재고:
        Available
        주문 시:
        2500
        수량 입력:
        IRF8513PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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