IPD80R1K4P7ATMA1

Mfr. #:: IPD80R1K4P7ATMA1
제조사:: Infineon Technologies
설명:: MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPD80R1K4P7ATMA1 데이터 시트
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추가 정보:: IPD80R1K4P7ATMA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-252-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 800 V

Id - 연속 드레인 전류:: 4 A

Rds On - 드레인 소스 저항:: 1.4 Ohms

Vgs th - 게이트 소스 임계 전압:: 3 V

Vgs - 게이트 소스 전압:: 30 V

Qg - 게이트 차지:: 10 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 32 W

구성:: 하나의

채널 모드:: 상승

상표명:: 쿨모스

포장:: 릴

키:: 2.3 mm

길이:: 6.5 mm

시리즈:: CoolMOS P7

너비:: 6.22 mm

상표:: 인피니언 테크놀로지스

가을 시간:: 20 ns

상품 유형:: MOSFET

상승 시간:: 8 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 40 ns

일반적인 켜기 지연 시간:: 10 ns

부품 번호 별칭:: IPD80R1K4P7 SP001422564

단위 무게:: 0.011993 oz

Tags: IPD80R1K4P, IPD80R1K4, IPD80R1, IPD80R, IPD80, IPD8, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD80R1K4P7ATMA1 설명

***ure Electronics: Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS Power Mosfet - DPAK

***ark: Mosfet, N-Ch, 800V, 4A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.2Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes

***ineon: 800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power

IPD80R1K4P7ATMA1 추가 정보

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

800V CoolMOS P7 MOSFETs: Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Market price

부분 #	제조	설명	재고	가격
IPD80R1K4P7ATMA1 DISTI # V72:2272_16563308	Infineon Technologies AG	Trans MOSFET N-CH 800V 4A T/R	2225	1000:$0.4007 500:$0.5249 250:$0.6087 100:$0.6089 25:$0.7106 10:$0.8684 1:$1.0124
IPD80R1K4P7ATMA1 DISTI # V36:1790_16563308	Infineon Technologies AG	Trans MOSFET N-CH 800V 4A T/R	0	2500000:$0.3311 1250000:$0.3314 250000:$0.3592 25000:$0.4093 2500:$0.4178
IPD80R1K4P7ATMA1 DISTI # IPD80R1K4P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 4A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2878In Stock	1000:$0.4611 500:$0.5840 100:$0.7069 10:$0.9070 1:$1.0100
IPD80R1K4P7ATMA1 DISTI # IPD80R1K4P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 4A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2878In Stock	1000:$0.4611 500:$0.5840 100:$0.7069 10:$0.9070 1:$1.0100
IPD80R1K4P7ATMA1 DISTI # IPD80R1K4P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 4A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	25000:$0.3780 12500:$0.3820 5000:$0.3969 2500:$0.4178
IPD80R1K4P7ATMA1 DISTI # 31994755	Infineon Technologies AG	Trans MOSFET N-CH 800V 4A T/R	10000	2500:$0.3559
IPD80R1K4P7ATMA1 DISTI # 29444067	Infineon Technologies AG	Trans MOSFET N-CH 800V 4A T/R	2225	18:$1.0124
IPD80R1K4P7ATMA1 DISTI # IPD80R1K4P7ATMA1	Infineon Technologies AG	Trans MOSFET N 800V 4A 3-Pin TO-252 T/R - Bulk (Alt: IPD80R1K4P7ATMA1) Min Qty: 962 Container: Bulk	Americas - 0	9620:$0.3299 4810:$0.3359 2886:$0.3479 1924:$0.3609 962:$0.3739
IPD80R1K4P7ATMA1 DISTI # IPD80R1K4P7ATMA1	Infineon Technologies AG	Trans MOSFET N 800V 4A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R1K4P7ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.3609 15000:$0.3669 10000:$0.3799 5000:$0.3939 2500:$0.4089
IPD80R1K4P7ATMA1 DISTI # IPD80R1K4P7	Infineon Technologies AG	Trans MOSFET N 800V 4A 3-Pin TO-252 T/R (Alt: IPD80R1K4P7) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	125000:$0.3598 62500:$0.3644 25000:$0.3691 12500:$0.3740 7500:$0.3841 5000:$0.3947 2500:$0.4060
IPD80R1K4P7ATMA1 DISTI # SP001422564	Infineon Technologies AG	Trans MOSFET N 800V 4A 3-Pin TO-252 T/R (Alt: SP001422564) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.3379 15000:€0.3639 10000:€0.3939 5000:€0.4299 2500:€0.5249
IPD80R1K4P7ATMA1 DISTI # 16AC3360	Infineon Technologies AG	MOSFET, N-CH, 800V, 4A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	1519	1000:$0.4310 500:$0.5450 250:$0.5820 100:$0.6180 50:$0.6800 25:$0.7420 10:$0.8040 1:$0.9390
IPD80R1K4P7ATMA1	Infineon Technologies AG	Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS Power Mosfet - DPAK RoHS: Compliant	20Cut Tape/Mini-Reel	1:$0.5950 50:$0.4800 100:$0.4600 250:$0.4400 500:$0.4200
IPD80R1K4P7ATMA1 DISTI # 726-IPD80R1K4P7ATMA1	Infineon Technologies AG	MOSFET RoHS: Compliant	5033	1:$0.9300 10:$0.7960 100:$0.6120 500:$0.5400 1000:$0.4270
IPD80R1K4P7ATMA1	Infineon Technologies AG	Infineon CoolMOS™ N-Channel Power MOSFETIPD80R1K4P7 - TO252 RoHS: Compliant	2500	1000:$0.3400 500:$0.3600 100:$0.3800 25:$0.3900 1:$0.4200
IPD80R1K4P7ATMA1 DISTI # 1300906P	Infineon Technologies AG	MOSFET N-CH 800V 4A COOLMOS P7 TO-252, RL	9679	25:£0.3000
IPD80R1K4P7ATMA1 DISTI # 2750414	Infineon Technologies AG	MOSFET, N-CH, 800V, 4A, TO-252	2483	500:£0.3950 250:£0.4220 100:£0.4480 25:£0.5820 5:£0.6870
IPD80R1K4P7ATMA1 DISTI # 2750414	Infineon Technologies AG	MOSFET, N-CH, 800V, 4A, TO-252 RoHS: Compliant	1384	500:$0.8810 100:$1.0700 10:$1.3700 1:$1.5200

관련 상품

영상	부분 #	설명
	Mfr.#: MCP1416RT-E/OT OMO.#: OMO-MCP1416RT-E-OT	Gate Drivers 1.5A Sngl MOSFET Drvr
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	Mfr.#: SRR1206-471KL OMO.#: OMO-SRR1206-471KL	Fixed Inductors 470uH 10% SMD 1206
	Mfr.#: SL22 7R010 OMO.#: OMO-SL22-7R010-AMETHERM	Inrush Current Limiters 22mm 7ohms 10A INRSH CURR LIMITER
	Mfr.#: NCP18XH103J03RB OMO.#: OMO-NCP18XH103J03RB-MURATA-ELECTRONICS	Thermistors - NTC 10K OHM 5%
	Mfr.#: MCP1416RT-E/OT OMO.#: OMO-MCP1416RT-E-OT-MICROCHIP-TECHNOLOGY	Gate Drivers 1.5A Sngl MOSFET Drv
	Mfr.#: STM32F072R8T6 OMO.#: OMO-STM32F072R8T6-STMICROELECTRONICS	IC MCU 32BIT 64KB FLASH 64LQFP

유효성

재고:: Available
주문 시:: 1988
수량 입력:

IPD80R1K4P7ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.93~~; ~~US$0.93~~

10: ~~US$0.80~~; ~~US$7.96~~

100: ~~US$0.61~~; ~~US$61.20~~

500: ~~US$0.54~~; ~~US$270.00~~

1000: ~~US$0.43~~; ~~US$427.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

IPD80R1K4P 3
IPD80R1K4 8
IPD80R1 15
IPD80R 42
IPD80 56
IPD8 62
IPD 1152

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IPD80R1K4P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes