FFSP20120A

Mfr. #:: FFSP20120A
제조사:: ON Semiconductor
설명:: Schottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FFSP20120A 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: FFSP20120A 추가 정보

제품 속성
속성 값

제조사: 페어차일드 반도체

제품 카테고리: 다이오드, 정류기 - 단일

시리즈: -

제품: 쇼트키 탄화규소 다이오드

포장: 튜브

장착 스타일: 구멍을 통해

패키지 케이스: TO-220-2

기술: SiC

장착형: 구멍을 통해

공급자-장치-패키지: TO-220-2

구성: 하나의

속도: Fast Recovery = 200mA (Io)

다이오드형: 탄화규소 쇼트키

전류 역 누설 Vr: 200μA @ 1200V

Voltage-Forward-Vf-Max-If: 1.75V @ 20A

전압-DC-역방향-Vr-최대: 1200V (1.2kV)

전류 평균 정류 Io: 20A

역복구-시간-trr: -

커패시턴스-Vr-F: 1220pF @ 1V, 100KHz

작동-온도-접점: -55°C ~ 175°C

Pd 전력 손실: 340 W

최대 작동 온도: + 175 C

최소 작동 온도: - 55 C

Vf 순방향 전압: 1.45 V

Vr-역전압: 1.2 kV

역전류: 200 uA

If-Forward-Current: 20 A

Vrrm-반복-역전압: 1.2 kV

Ifsm-순방향-서지-전류: 135 A

Tags: FFSP2, FFSP, FFS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FFSP20120A 추가 정보

FFSP SiC Schottky Diodes: ON Semiconductor FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

1200V SiC Schottky Diodes: ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.

Wide Bandgap SiC Devices: ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes: ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost. ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

Market price

부분 #	제조	설명	재고	가격
FFSP20120A DISTI # V99:2348_16116319	ON Semiconductor	Diode Schottky 1.2KV 20A Rail	240	1000:$6.0350 500:$6.4860 250:$7.3180 100:$7.6150 25:$8.4200 10:$8.9149 1:$9.6900
FFSP20120A DISTI # FFSP20120A-ND	ON Semiconductor	DIODE SCHOTTKY 1.2KV 20A TO220-2 RoHS: Compliant Min Qty: 1 Container: Tube	565In Stock	100:$8.5843 10:$10.3690 1:$11.4800
FFSP20120A DISTI # 25895795	ON Semiconductor	Diode Schottky 1.2KV 20A Rail	240	100:$7.6150 25:$8.4200 10:$8.9149 1:$9.6900
FFSP20120A DISTI # FFSP20120A	ON Semiconductor	1200V SiC SBD 20A - Rail/Tube (Alt: FFSP20120A) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	800:$5.9900 1600:$5.8900 3200:$5.7900 4800:$5.7900 8000:$5.5900
FFSP20120A DISTI # FFSP20120A	ON Semiconductor	1200V SiC SBD 20A (Alt: FFSP20120A) RoHS: Compliant Min Qty: 1	Europe - 0	1:€7.3900 10:€6.6900 25:€6.4900 50:€6.1900 100:€5.9900 500:€5.7900 1000:€5.3900
FFSP20120A DISTI # 512-FFSP20120A	ON Semiconductor	Schottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode RoHS: Compliant	242	1:$10.9300 10:$9.8800 25:$9.4200 100:$8.1800 250:$7.8100 500:$7.1200 1000:$6.2100
FFSP20120A DISTI # C1S541901575560	ON Semiconductor	Diode Schottky 1.2KV 20A 2-Pin(2+Tab) TO-220 Tube	240	100:$7.6160 25:$8.4210 10:$8.9160 1:$9.6910

영상	부분 #	설명
	Mfr.#: FFSP2065B-F085 OMO.#: OMO-FFSP2065B-F085	Schottky Diodes & Rectifiers Auto SiC Schottky Diode, 650 V
	Mfr.#: FFSP2065A OMO.#: OMO-FFSP2065A	Schottky Diodes & Rectifiers SIC TO220 SBD 20A 650V
	Mfr.#: FFSP20120A OMO.#: OMO-FFSP20120A	Schottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode
	Mfr.#: FFSP20120A OMO.#: OMO-FFSP20120A-ON-SEMICONDUCTOR	Schottky Diodes & Rectifiers 1200V 20A Silicon Carbide Schtky Diode
	Mfr.#: FFSP2065A OMO.#: OMO-FFSP2065A-ON-SEMICONDUCTOR	DIODE SCHOTTKY 650V 25A TO220-2
	Mfr.#: FFSP2065B-F085 OMO.#: OMO-FFSP2065B-F085-1190	SIC DIODE 650V
	Mfr.#: FFSP20S120A OMO.#: OMO-FFSP20S120A-1190	신규 및 오리지널

FFSP20120A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes