FGM622S

FGM622S
Mfr. #:
FGM622S
제조사:
Sanken
설명:
Trans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FGM622S 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
산켄
제품 카테고리
IGBT - 싱글
시리즈
-
포장
튜브
패키지 케이스
TO-3P-3 Full Pack
입력 유형
기준
장착형
표면 실장
공급자-장치-패키지
TO-3PF-3
파워맥스
60W
역복구-시간-trr
-
전류 수집기 Ic-Max
25A
Voltage-Collector-Emitter-Breakdown-Max
600V
IGBT형
-
전류 수집기 펄스 Icm
75A
Vce-on-Max-Vge-Ic
1.9V @ 15V, 25A
스위칭 에너지
-
게이트 차지
40nC
Td-on-off-25°C
50ns/200ns
시험조건
-
Tags
FGM62, FGM6, FGM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF
***i-Key
IGBT 600V 16A TO-3PF
***ical
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
14 A, 600 V short-circuit rugged IGBT
*** Source Electronics
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Short-circuit rugged IGBT, D2PAK, Tape and Reel
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***(Formerly Allied Electronics)
IGBT, N-CHANNEL 600V 25A, D2PAK
***ser
IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT
*** Electronic Components
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***nell
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;
***ure Electronics
N Channel 600 V 25 A Surface Mount Very Fast PowerMESH IGBT - TO-252
***ical
Trans IGBT Chip N-CH 600V 25A 70000mW 3-Pin(2+Tab) DPAK T/R
***nell
IGBT, SINGLE, 600V, 25A, TO-252; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***ark
N CHANNEL IGBT, PowerMESH, 600V, 25A, DPAK, FULL REEL; Continuous Collector Current:25A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:70W; Collector Emitter Voltage Max:600V; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
*** Source Electronics
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) DPAK T/R / IGBT 600V 25A 80W DPAK
***ure Electronics
STGD14NC60K Series N-Channel 600 V 14 A Short Circuit PowerMESH IGBT - TO-252-3
***r Electronics
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
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***icroelectronics
New short circuit rugged "K" series
***ical
Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R
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ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
***ment14 APAC
IGBT, SINGLE, 600V, 20A, TO-252-3
***nell
IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ineon SCT
Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS
***ow.cn
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(2+Tab) D2PAK Tube
***ineon
Target Applications: Air Conditioner; Dryer; Pump; Solar; UPS; Washing Machine
***ment14 APAC
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:17A; Fall Time Max:230ns; Package / Case:D2-PAK; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:27ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.9pF 25volts C0G +/-0.5pF
***ineon SCT
Infineon's 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS
***ment14 APAC
IGBT,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Power Dissipation Max:130W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
부분 # 제조 설명 재고 가격
FGM622S
DISTI # 30592756
Sanken Electric Co LtdTrans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF
RoHS: Compliant
1080
  • 10:$2.4097
  • 7:$3.8760
FGM622S
DISTI # FGM622S-ND
Sanken Electric Co LtdIGBT 600V 16A TO-3PF
RoHS: Compliant
Min Qty: 1080
Container: Tube
Temporarily Out of Stock
  • 1080:$2.7783
FGM622S
DISTI # C1S721000047362
Sanken Electric Co LtdTrans IGBT Chip N-CH 600V 25A 3-Pin(3+Tab) TO-3PF1080
  • 10:$1.8900
  • 1:$3.0400
영상 부분 # 설명
FGMD12SR6020NA

Mfr.#: FGMD12SR6020NA

OMO.#: OMO-FGMD12SR6020NA

Non-Isolated DC/DC Converters Digital
FGM.0B.304.CLLD52Z

Mfr.#: FGM.0B.304.CLLD52Z

OMO.#: OMO-FGM-0B-304-CLLD52Z-LEMO

Circular Push Pull Connectors STRAIGHT PLUG FEMALE W. CABLE COLLET
FGMS12SR6020NA

Mfr.#: FGMS12SR6020NA

OMO.#: OMO-FGMS12SR6020NA-FDK-AMERICA

Non-Isolated DC/DC Converters Analog
FGMD12SWR6012PA

Mfr.#: FGMD12SWR6012PA

OMO.#: OMO-FGMD12SWR6012PA-FDK-AMERICA

DC DC CONVERTER
FGM-330PGSR

Mfr.#: FGM-330PGSR

OMO.#: OMO-FGM-330PGSR-1190

신규 및 오리지널
FGM300D12AV3

Mfr.#: FGM300D12AV3

OMO.#: OMO-FGM300D12AV3-1190

신규 및 오리지널
FGM400D06AV3

Mfr.#: FGM400D06AV3

OMO.#: OMO-FGM400D06AV3-1190

신규 및 오리지널
FGMC-630PGSR

Mfr.#: FGMC-630PGSR

OMO.#: OMO-FGMC-630PGSR-1190

신규 및 오리지널
FGMC-650PGSR

Mfr.#: FGMC-650PGSR

OMO.#: OMO-FGMC-650PGSR-1190

신규 및 오리지널
FGMLB125V/1APBF

Mfr.#: FGMLB125V/1APBF

OMO.#: OMO-FGMLB125V-1APBF-1190

신규 및 오리지널
유효성
재고:
Available
주문 시:
2500
수량 입력:
FGM622S의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.84
US$2.84
10
US$2.69
US$26.93
100
US$2.55
US$255.15
500
US$2.41
US$1 204.90
1000
US$2.27
US$2 268.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
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