MG06100S-BN4MM

MG06100S-BN4MM
Mfr. #:
MG06100S-BN4MM
제조사:
Littelfuse
설명:
IGBT Modules 600V 100A Dual
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
MG06100S-BN4MM 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
MG06100S-BN4MM 추가 정보
제품 속성
속성 값
제조사:
리텔퓨즈
제품 카테고리:
IGBT 모듈
RoHS:
Y
제품:
IGBT 실리콘 모듈
구성:
듀얼
컬렉터-이미터 전압 VCEO 최대:
600 V
수집기-이미터 포화 전압:
1.45 V
25C에서 연속 수집기 전류:
125 A
게이트-이미터 누설 전류:
400 nA
Pd - 전력 손실:
330 W
패키지/케이스:
패키지 S
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
포장:
대부분
시리즈:
MG06100S
상표:
리텔퓨즈
장착 스타일:
섀시 마운트
최대 게이트 이미터 전압:
20 V
상품 유형:
IGBT 모듈
공장 팩 수량:
100
하위 카테고리:
IGBT
단위 무게:
5.643834 oz
Tags
MG061, MG06, MG0
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 600V 125A 330W PKG S
***
600V 100A S-PACKAGE
***ark
Igbt Module, Dual Npn, 600V, 125A; Transistor Polarity:dual Npn; Dc Collector Current:125A; Collector Emitter Saturation Voltage Vce(On):1.45V; Power Dissipation Pd:330W; Collector Emitter Voltage V(Br)Ceo:600V; No. Of Pins:7Pins Rohs Compliant: Yes
Silicon IGBT Power Modules
Littelfuse Silicon IGBT Power Modules ensure high efficiency and fast switching by combining simple MOSFET gate-drive with the high current and low saturation voltage switching capability of bipolar transistors. These features make them well-suited for a wide range of power conversion applications. In addition, the positive temperature coefficient of the modules allows for ease in paralleling to boost the current capability of the system. The modules are rated up to 1700V and 600A in industry standard packages and common topologies.
부분 # 제조 설명 재고 가격
MG06100S-BN4MM
DISTI # F6491-ND
Littelfuse IncIGBT 600V 125A 330W PKG S
RoHS: Compliant
Min Qty: 1
Container: Bulk
24In Stock
  • 100:$68.1462
  • 25:$71.7096
  • 10:$74.8270
  • 1:$79.2800
MG06100S-BN4MM
DISTI # 31Y2573
Littelfuse IncIGBT MODULE, DUAL NPN, 600V, 125A,Transistor Polarity:Dual NPN,DC Collector Current:125A,Collector Emitter Saturation Voltage Vce(on):1.45V,Power Dissipation Pd:330W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:7Pins RoHS Compliant: Yes0
  • 1000:$61.9200
  • 500:$63.7100
  • 250:$65.9300
  • 100:$69.0500
  • 50:$73.5000
  • 10:$83.7500
  • 1:$95.7700
MG06100S-BN4MM
DISTI # 576-MG06100S-BN4MM
Littelfuse IncIGBT Modules 600V 100A Dual
RoHS: Compliant
0
  • 100:$65.9200
MG06100S-BN4MMLittelfuse IncIGBT Modules 600V 100A DualAmericas -
    MG06100S-BN4MM
    DISTI # 57P2279
    Littelfuse Inc 0
    • 100:$60.5000
    영상 부분 # 설명
    MG06100S-BN4MM

    Mfr.#: MG06100S-BN4MM

    OMO.#: OMO-MG06100S-BN4MM

    IGBT Modules 600V 100A Dual
    MG06100S-BR1MM

    Mfr.#: MG06100S-BR1MM

    OMO.#: OMO-MG06100S-BR1MM

    IGBT Modules 600V 100A Dual
    MG06100S-BR1MM

    Mfr.#: MG06100S-BR1MM

    OMO.#: OMO-MG06100S-BR1MM-LITTELFUSE

    IGBT Modules 600V 100A Dual
    MG06100S-BN4MM

    Mfr.#: MG06100S-BN4MM

    OMO.#: OMO-MG06100S-BN4MM-LITTELFUSE

    IGBT Modules 600V 100A Dual
    유효성
    재고:
    Available
    주문 시:
    2500
    수량 입력:
    MG06100S-BN4MM의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    100
    US$65.92
    US$6 592.00
    시작
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