OMO ElectronicOMO Electronic
Expand menu
안녕하세요, 로그인내 계정
0 카트

IXFH12N90P

IXFH12N90P
Mfr. #:
IXFH12N90P
제조사:
Littelfuse
설명:
Darlington Transistors MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFH12N90P 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IXFH12N90P 추가 정보
제품 속성
속성 값
제조사
익시스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
IXFH12N90
포장
튜브
단위 무게
0.229281 oz
장착 스타일
구멍을 통해
상표명
하이퍼펫
패키지 케이스
TO-247-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
380 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
68 ns
상승 시간
34 ns
Vgs 게이트 소스 전압
30 V
Id-연속-드레인-전류
12 A
Vds-드레인-소스-고장-전압
900 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V to 6.5 V
Rds-On-Drain-Source-Resistance
900 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
50 ns
일반 켜기 지연 시간
32 ns
Qg-Gate-Charge
56 nC
순방향 트랜스컨덕턴스-최소
8.2 S
채널 모드
상승
Tags
IXFH12N, IXFH12, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET,N CH,900V,12A,TO-247
***nell
MOSFET,N CH,900V,12A,TO-247; Transistor Polarity:N Channel; Current Id Max:12A; Drain Source Voltage Vds:900V; On State Resistance:900mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:30V; Power Dissipation:380W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3
900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
부분 # 제조 설명 재고 가격
IXFH12N90P
DISTI # IXFH12N90P-ND		IXYS CorporationMOSFET N-CH 900V 12A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$6.1560
IXFH12N90P
DISTI # 83R9967		IXYS CorporationN CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:900V,On Resistance Rds(on):0.9ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:3Pins RoHS Compliant: Yes30
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
IXFH12N90P
DISTI # 747-IXFH12N90P		IXYS CorporationMOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
RoHS: Compliant		55
  • 1:$8.7800
  • 10:$7.8500
  • 25:$6.8300
  • 50:$6.6900
  • 100:$6.4400
  • 250:$5.5000
  • 500:$5.2100
  • 1000:$4.4000
IXFH12N90P
DISTI # 1829759		IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant		30
  • 1:£7.5500
  • 5:£6.9700
  • 10:£5.0100
IXFH12N90P
DISTI # 1829759		IXYS CorporationMOSFET,N CH,900V,12A,TO-247
RoHS: Compliant		30
  • 1:$13.9000
  • 10:$12.4300
  • 25:$10.8100
  • 50:$10.5900
  • 100:$10.2000
  • 250:$8.7100
  • 500:$8.2500
  • 1000:$6.9700
영상 부분 # 설명
IXFH140N10P

Mfr.#: IXFH140N10P

OMO.#: OMO-IXFH140N10P

 MOSFET 140 Amps 100V 0.011 Rds
IXFH15N100P

Mfr.#: IXFH15N100P

OMO.#: OMO-IXFH15N100P

 MOSFET 15 Amps 1000V 0.76 Rds
IXFH120N25X3

Mfr.#: IXFH120N25X3

OMO.#: OMO-IXFH120N25X3

 MOSFET DISCMSFT NCHULTRJNCTN X3CLASS
IXFH120N25T

Mfr.#: IXFH120N25T

OMO.#: OMO-IXFH120N25T

 MOSFET Trench HiperFETs Power MOSFETs
IXFH13N90P

Mfr.#: IXFH13N90P

OMO.#: OMO-IXFH13N90P-1190

 신규 및 오리지널
IXFH120N15P

Mfr.#: IXFH120N15P

OMO.#: OMO-IXFH120N15P-IXYS-CORPORATION

 Darlington Transistors MOSFET 120 Amps 150V 0.016 Rds
IXFH14N60P

Mfr.#: IXFH14N60P

OMO.#: OMO-IXFH14N60P-IXYS-CORPORATION

 Darlington Transistors MOSFET 600V 14A
IXFH15N80Q

Mfr.#: IXFH15N80Q

OMO.#: OMO-IXFH15N80Q-IXYS-CORPORATION

 MOSFET 800V 15A
IXFH13N80Q

Mfr.#: IXFH13N80Q

OMO.#: OMO-IXFH13N80Q-IXYS-CORPORATION

 MOSFET 13 Amps 800V 0.8 Rds
IXFH150N17T2

Mfr.#: IXFH150N17T2

OMO.#: OMO-IXFH150N17T2-IXYS-CORPORATION

 IGBT Transistors MOSFET 175V 150A
유효성
재고:
Available
주문 시:
4500
수량 입력:
IXFH12N90P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$6.60
US$6.60
10
US$6.27
US$62.70
100
US$5.94
US$594.00
500
US$5.61
US$2 805.00
1000
US$5.28
US$5 280.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
최신 제품
More Newest Products
Top