HN1C01FE-Y,LF

Mfr. #:: HN1C01FE-Y,LF
제조사:: Toshiba
설명:: Bipolar Transistors - BJT Transistor for Small Signal Amp
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: HN1C01FE-Y,LF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: HN1C01FE-Y,LF Datasheet
ECAD Model:

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

기술:: 시

트랜지스터 극성:: NPN

구성:: 듀얼

컬렉터-이미터 전압 VCEO 최대:: 50 V

컬렉터-베이스 전압 VCBO:: 60 V

이미터-베이스 전압 VEBO:: 5 V

수집기-이미터 포화 전압:: 100 mV

최대 DC 수집기 전류:: 150 mA

이득 대역폭 곱 fT:: 80 MHz

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: HN1C01

DC 전류 이득 hFE 최대:: 400

포장:: 릴

상표:: 도시바

DC 수집기/기본 이득 hfe 최소:: 120

Pd - 전력 손실:: 100 mW

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 4000

하위 카테고리:: 트랜지스터

단위 무게:: 0.000106 oz

Tags: HN1C01FE-Y, HN1C01FE, HN1C01, HN1C0, HN1C, HN1

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HN1C01FE-Y,LF 설명

***ical: Trans GP BJT NPN 50V 0.15A 300mW 6-Pin ES T/R

***: BJT TRANSISTOR FOR SS AMP

***i-Key: TRANS 2NPN 50V 0.15A ES6

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