IRFB260NPBF

Mfr. #:: IRFB260NPBF
제조사:: Infineon Technologies
설명:: MOSFET MOSFT 200V 56A 40mOhm 150nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRFB260NPBF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRFB260NPBF Datasheet IRFB260NPBF Datasheet (P4-P6)IRFB260NPBF Datasheet (P7-P9)
ECAD Model:
추가 정보:: IRFB260NPBF 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 200 V

Id - 연속 드레인 전류:: 56 A

Rds On - 드레인 소스 저항:: 40 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 150 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 380 W

구성:: 하나의

채널 모드:: 상승

포장:: 튜브

키:: 15.65 mm

길이:: 10 mm

트랜지스터 유형:: 1 N-Channel

너비:: 4.4 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 29 S

가을 시간:: 50 ns

상품 유형:: MOSFET

상승 시간:: 64 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 52 ns

일반적인 켜기 지연 시간:: 17 ns

부품 번호 별칭:: SP001551726

단위 무게:: 0.211644 oz

Tags: IRFB260N, IRFB26, IRFB2, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFB260NPBF 설명

***ied Electronics & Automation: MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 56A;TO-220AB;PD 380W;VGS +/-20V

*** Source Electronics: Trans MOSFET N-CH 200V 56A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 56A TO-220AB

***ure Electronics: Single N-Channel 200 V 40 mOhm 220 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 380 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 200V, 56A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:380W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Junction to Case Thermal Resistance A:0.4°C/W; On State resistance @ Vgs = 10V:40ohm; Package / Case:TO-220AB; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Pulse Current Idm:220A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

IRFB260NPBF 추가 정보

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

부분 #	제조	설명	재고	가격
IRFB260NPBF DISTI # C1S327400158275	Infineon Technologies AG	Trans MOSFET N-CH 200V 56A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	370	50:$1.2600 10:$1.2700 1:$2.4500
IRFB260NPBF DISTI # IRFB260NPBF-ND	Infineon Technologies AG	MOSFET N-CH 200V 56A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	1981In Stock	1000:$1.5352 500:$1.8528 100:$2.3822 50:$2.6468 1:$3.2800
IRFB260NPBF DISTI # IRFB260NPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 56A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB260NPBF) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 2594	1:$2.6900 10:$2.2900 25:$2.2900 50:$2.2900 100:$1.7900 500:$1.5900 1000:$1.2900
IRFB260NPBF DISTI # SP001551726	Infineon Technologies AG	Trans MOSFET N-CH 200V 56A 3-Pin(3+Tab) TO-220AB (Alt: SP001551726) RoHS: Compliant Min Qty: 1	Europe - 450	1:€1.4199 10:€1.2899 25:€1.1829 50:€1.1359 100:€1.0919 500:€1.0509 1000:€1.0139
IRFB260NPBF DISTI # IRFB260NPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 56A 3-Pin(3+Tab) TO-220AB (Alt: IRFB260NPBF) RoHS: Compliant Min Qty: 1000	Asia - 0
IRFB260NPBF DISTI # 63J6714	Infineon Technologies AG	N CHANNEL MOSFET, 200V, 56A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:56A,Drain Source Voltage Vds:200V,On Resistance Rds(on):40mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- , RoHS Compliant: Yes	1102	1:$1.6200 10:$1.6200 100:$1.6200 500:$1.6200 1000:$1.4000 2500:$1.3000 5000:$1.2600
IRFB260NPBF. DISTI # 27AC6760	Infineon Technologies AG	PLANAR_MOSFETS , ROHS COMPLIANT: YES	0	1:$2.9000 10:$2.4600 100:$1.9700 500:$1.6900 1000:$1.4000 2500:$1.3000 5000:$1.2600
IRFB260NPBF DISTI # 70017423	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.04Ohm,ID 56A,TO-220AB,PD 380W,VGS +/-20V RoHS: Compliant	259	1:$5.8200 10:$5.1300 100:$4.4800 500:$3.8800 1000:$3.4200
IRFB260NPBF DISTI # 942-IRFB260NPBF	Infineon Technologies AG	MOSFET MOSFT 200V 56A 40mOhm 150nC RoHS: Compliant	1239	1:$2.8400 10:$2.4100 100:$1.9300 500:$1.6900 1000:$1.4000 2500:$1.3000 5000:$1.2600
IRFB260NPBF	Infineon Technologies AG	Single N-Channel 200 V 40 mOhm 220 nC HEXFET Power Mosfet - TO-220-3 RoHS: Compliant	100Tube	10:$1.4700 100:$1.3000 500:$1.1200
IRFB260NPBF DISTI # 8655780P	Infineon Technologies AG	MOSFET N-CH 200V 56A HEXFET SMPS TO220AB, TU	715	100:£1.3820 250:£1.3000 500:£1.2160 1000:£1.0100
IRFB260NPBF DISTI # 8273938P	Infineon Technologies AG	MOSFET N-CH 200V 56A HEXFET SMPS TO220AB, TU	355	50:£1.7820 100:£1.6500 250:£1.5280 500:£1.3440
IRFB260NPBF DISTI # 8273938	Infineon Technologies AG	MOSFET N-CH 200V 56A HEXFET SMPS TO220AB, PK	130	5:£2.2040 50:£1.7820 100:£1.6500 250:£1.5280 500:£1.3440
IRFB260NPBF DISTI # 8655780	Infineon Technologies AG	MOSFET N-CH 200V 56A HEXFET SMPS TO220AB, TU	20	5:£1.9580 100:£1.3820 250:£1.3000 500:£1.2160 1000:£1.0100
IRFB260NPBF DISTI # IRFB260NPBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,200V,56A,380W,TO220AB	43	1:$2.1800 3:$2.0000 10:$1.6200 50:$1.4000 100:$1.2700
IRFB260NPBF DISTI # IRFB260NPBF	Infineon Technologies AG	N-Ch 200V 56A 380W 0,040R TO220AB RoHS: Compliant	910	10:€1.3900 50:€1.0900 200:€0.9860 500:€0.9490
IRFB260NPBF DISTI # 8657939	Infineon Technologies AG	MOSFET, N, 200V, 56A, TO-220 RoHS: Compliant	15	1:£2.0000 10:£1.8200 100:£1.4100 250:£1.3300 500:£1.2400
IRFB260NPBF DISTI # XSLY00000000901	INFINEON/IR	TO-220AB RoHS: Compliant	1728	600:$1.1400 1728:$1.0700
IRFB260NPBF DISTI # 8657939	Infineon Technologies AG	MOSFET, N, 200V, 56A, TO-220 RoHS: Compliant	0	1:$4.5000 10:$3.8200 100:$3.0600 500:$2.6800 1000:$2.2200 2500:$2.0600 5000:$2.0000

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유효성

재고:: Available
주문 시:: 1984
수량 입력:

IRFB260NPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$2.84~~; ~~US$2.84~~

10: ~~US$2.41~~; ~~US$24.10~~

100: ~~US$1.93~~; ~~US$193.00~~

500: ~~US$1.69~~; ~~US$845.00~~

1000: ~~US$1.40~~; ~~US$1 400.00~~

2500: ~~US$1.30~~; ~~US$3 250.00~~

5000: ~~US$1.26~~; ~~US$6 300.00~~

시작

IRFB260N 3
IRFB26 4
IRFB2 20
IRFB 468
IRF 8615

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IRFB260NPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes