SI4346DY-T1-E3

Mfr. #:: SI4346DY-T1-E3
제조사:: Vishay
설명:: MOSFET N-CH 30V 5.9A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4346DY-T1-E3 데이터 시트
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HTML Datasheet:: SI4346DY-T1-E3 Datasheet SI4346DY-T1-E3 Datasheet (P4-P6)SI4346DY-T1-E3 Datasheet (P7-P8)
ECAD Model:

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SI4346DY-E3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 8-SO

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 1.31W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: -

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 5.9A (Ta)

Rds-On-Max-Id-Vgs: 23 mOhm @ 8A, 10V

Vgs-th-Max-Id: 2V @ 250μA

Gate-Charge-Qg-Vgs: 10nC @ 4.5V

Pd 전력 손실: 1.31 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 11 ns

상승 시간: 11 ns

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: 5.9 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 23 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 40 ns

일반 켜기 지연 시간: 9 ns

채널 모드: 상승

Tags: SI4346D, SI4346, SI434, SI43, SI4

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4346DY-T1-E3 설명

***ure Electronics: Single N-Channel 30 V 0.023 Ohms Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET,N CH,30V,5.9A,8-SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Current Id Max:5.9A; Power Dissipation Pd:1.31W; Voltage Vgs Max:12V

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.9A; On Resistance Rds(On):0.019Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Product Range:-Rohs Compliant: No

Market price

부분 #	제조	설명	재고	가격
SI4346DY-T1-E3 DISTI # V72:2272_09216464	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	1125	75000:$0.3116 30000:$0.3146 15000:$0.3175 6000:$0.3205 3000:$0.3234 1000:$0.3264 500:$0.3585 250:$0.3923 100:$0.4267 50:$0.4351 25:$0.4834 10:$0.4928 1:$0.5231
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1591In Stock	1000:$0.3577 500:$0.4423 100:$0.5903 10:$0.7590 1:$0.8700
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1591In Stock	1000:$0.3577 500:$0.4423 100:$0.5903 10:$0.7590 1:$0.8700
SI4346DY-T1-E3 DISTI # SI4346DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 5.9A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SI4346DY-T1-E3 DISTI # 25790090	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	1125	15000:$0.3413 6000:$0.3445 3000:$0.3477 1000:$0.3509 500:$0.3854 250:$0.4217 100:$0.4587 50:$0.4677 25:$0.5197 19:$0.5298
SI4346DY-T1-E3 DISTI # 19257946	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.9A 8-Pin SOIC N T/R RoHS: Compliant	995	167:$0.3750
SI4346DY-T1-E3 DISTI # 57J5650	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 8A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:2V,No. of Pins:8Pins RoHS Compliant: Yes	995	1:$0.3000 10:$0.3000 25:$0.3000 50:$0.3000 100:$0.3000 250:$0.3000 500:$0.3000
SI4346DY-T1-E3. DISTI # 30AC0153	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.31W,No. of Pins:8Pins RoHS Compliant: No	0
SI4346DY-T1-E3 DISTI # 70026210	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant	0	2500:$0.4400 5000:$0.4200 7500:$0.3900
SI4346DY-T1-E3 DISTI # 781-SI4346DY-T1-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3 RoHS: Compliant	0
SI4346DY-T1-E3	Vishay Siliconix	MOSFET Transistor, N-Channel, SO	20	1:$1.7500
SI4346DY-T1-E3	---		7
SI4346DY-T1-E3	Vishay Intertechnologies		6969
SI4346DYT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 5.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 2500
SI4346DY-T1-E3			281
SI4346DY-T1-E3 DISTI # 1839003	Vishay Intertechnologies	MOSFET,N CH,30V,5.9A,8-SOIC RoHS: Compliant	995	1000:£0.3290 500:£0.3360 100:£0.3430 50:£0.4530 5:£0.5100

영상	부분 #	설명
	Mfr.#: SI4346DY-T1-GE3 OMO.#: OMO-SI4346DY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI4174DY-T1-GE3
	Mfr.#: SI4346DY-T1-GE3 OMO.#: OMO-SI4346DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 30V 8.0A 2.5W 23mohm @ 10V
	Mfr.#: SI4346DY-T1 OMO.#: OMO-SI4346DY-T1-1190	신규 및 오리지널
	Mfr.#: SI4346DY-T1-E3 OMO.#: OMO-SI4346DY-T1-E3-VISHAY	MOSFET N-CH 30V 5.9A 8-SOIC

SI4346DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes