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SI7434DP-T1-GE3

SI7434DP-T1-GE3
Mfr. #:
SI7434DP-T1-GE3
제조사:
Vishay
설명:
IGBT Transistors MOSFET 250V 3.8A 5.2W 155mohm @ 10V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI7434DP-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
비쉐이 실리콘
제품 카테고리
FET - 단일
시리즈
트렌치FETR
포장
Digi-ReelR 대체 패키징
부분 별칭
SI7434DP-GE3
단위 무게
0.017870 oz
장착 스타일
SMD/SMT
패키지 케이스
PowerPAKR SO-8
기술
시
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
채널 수
1 Channel
공급자-장치-패키지
PowerPAKR SO-8
구성
하나의
FET형
MOSFET N-채널, 금속 산화물
파워맥스
1.9W
트랜지스터형
1 N-Channel
드레인-소스 전압 Vdss
250V
입력-커패시턴스-Ciss-Vds
-
FET 기능
기준
Current-Continuous-Drain-Id-25°C
2.3A (Ta)
Rds-On-Max-Id-Vgs
155 mOhm @ 3.8A, 10V
Vgs-th-Max-Id
4V @ 250μA
Gate-Charge-Qg-Vgs
50nC @ 10V
Pd 전력 손실
1.9 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
23 ns
상승 시간
23 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
2.3 A
Vds-드레인-소스-고장-전압
250 V
Rds-On-Drain-Source-Resistance
155 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
47 ns
일반 켜기 지연 시간
16 ns
채널 모드
상승
Tags
SI7434, SI743, SI74, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Trans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
***ark
COMPLEMENTARY MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:3.8A; On Resistance, Rds(on):0.162ohm; Rds(on) Test Voltage, Vgs:6V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,DIODE,250V,3.8A,SO8 PPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.129ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.8A; Power Dissipation Pd:5.2W; Voltage Vgs Max:20V
부분 # 제조 설명 재고 가격
SI7434DP-T1-GE3
DISTI # V72:2272_09216354		Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3099
  • 3000:$1.4910
  • 1000:$1.5220
  • 500:$1.6900
  • 250:$1.8150
  • 100:$1.9320
  • 25:$2.1629
  • 10:$2.1750
  • 1:$2.4129
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 250V 2.3A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7731In Stock
  • 1000:$1.5296
  • 500:$1.8461
  • 100:$2.3736
  • 10:$2.9540
  • 1:$3.2700
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 250V 2.3A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7731In Stock
  • 1000:$1.5296
  • 500:$1.8461
  • 100:$2.3736
  • 10:$2.9540
  • 1:$3.2700
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 250V 2.3A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$1.3827
SI7434DP-T1-GE3
DISTI # 25790042		Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
RoHS: Compliant		3099
  • 3000:$1.4900
  • 1000:$1.5209
  • 500:$1.6870
  • 250:$1.8120
  • 100:$1.9270
  • 25:$2.1570
  • 10:$2.1680
  • 5:$2.4040
SI7434DP-T1-GE3
DISTI # SI7434DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7434DP-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$1.2900
  • 6000:$1.2900
  • 12000:$1.2900
  • 18000:$1.2900
  • 30000:$1.2900
SI7434DP-T1-GE3
DISTI # 26R1922		Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 26R1922)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.7900
SI7434DP-T1-GE3
DISTI # 15R5190		Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC,Continuous Drain Current Id:3.8A,Drain Source Voltage Vds:250V,No. of Pins:8,On Resistance Rds(on):162mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-SOIC RoHS Compliant: Yes0
  • 1:$1.9500
  • 2000:$1.8600
  • 4000:$1.7400
  • 8000:$1.6200
  • 12000:$1.5500
  • 20000:$1.5300
SI7434DP-T1-GE3
DISTI # 26R1922		Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:3.8A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.129ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:4V RoHS Compliant: Yes20
  • 1:$3.5800
  • 25:$2.9600
  • 50:$2.7100
  • 100:$2.4500
  • 250:$2.3600
  • 500:$2.1200
  • 1000:$1.7900
SI7434DP-T1-GE3
DISTI # 781-SI7434DP-T1-GE3		Vishay IntertechnologiesMOSFET 250V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		1700
  • 1:$2.9800
  • 10:$2.4700
  • 100:$2.0400
  • 250:$1.9700
  • 500:$1.7700
  • 1000:$1.4900
  • 3000:$1.4200
SI7434DPT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 2.3A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		Europe - 3000
    SI7434DP-T1-GE3Vishay Intertechnologies 2333
      SI7434DP-T1-GE3Vishay Intertechnologies 273
        SI7434DP-T1-GE3
        DISTI # C1S803604026283        		Vishay IntertechnologiesTrans MOSFET N-CH 250V 2.3A 8-Pin PowerPAK SO T/R
        RoHS: Compliant        		3099
        • 250:$1.8120
        • 100:$1.9270
        • 25:$2.1570
        • 10:$2.1680
        • 1:$2.4040
        SI7434DP-T1-GE3
        DISTI # 2132253        		Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC
        RoHS: Compliant        		20
        • 1:£3.1500
        • 25:£2.6000
        • 50:£2.3900
        • 100:£2.1500
        • 250:£2.0700
        SI7434DP-T1-GE3Vishay IntertechnologiesMOSFET 250V Vds 20V Vgs PowerPAK SO-8Americas -
          SI7434DP-T1-GE3
          DISTI # 2132253          		Vishay IntertechnologiesN CHANNEL MOSFET, 250V, 3.8A, SOIC
          RoHS: Compliant          		20
          • 3000:$4.2400
          • 6000:$3.7000
          영상 부분 # 설명
          SI7434DP-T1-E3

          Mfr.#: SI7434DP-T1-E3

          OMO.#: OMO-SI7434DP-T1-E3

          		 MOSFET 250V Vds 20V Vgs PowerPAK SO-8
          SI7434DP-T1-GE3

          Mfr.#: SI7434DP-T1-GE3

          OMO.#: OMO-SI7434DP-T1-GE3

          		 MOSFET 250V Vds 20V Vgs PowerPAK SO-8
          SI7434DP-T1-GE3

          Mfr.#: SI7434DP-T1-GE3

          OMO.#: OMO-SI7434DP-T1-GE3-VISHAY

          		 IGBT Transistors MOSFET 250V 3.8A 5.2W 155mohm @ 10V
          SI7434DP-T1-E3

          Mfr.#: SI7434DP-T1-E3

          OMO.#: OMO-SI7434DP-T1-E3-VISHAY

          		 MOSFET N-CH 250V 2.3A PPAK SO-8
          유효성
          재고:
          Available
          주문 시:
          1000
          수량 입력:
          SI7434DP-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
          참고 가격(USD)
          수량
          단가
          내선 가격
          1
          US$1.94
          US$1.94
          10
          US$1.84
          US$18.38
          100
          US$1.74
          US$174.15
          500
          US$1.64
          US$822.40
          1000
          US$1.55
          US$1 548.00
          시작
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