IPD025N06NATMA1

Mfr. #:: IPD025N06NATMA1
제조사:: Infineon Technologies
설명:: MOSFET N-CH 60V 26A TO252-3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPD025N06NATMA1 데이터 시트
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Tags: IPD02, IPD0, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

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IPD025N06NATMA1 설명

***ure Electronics: Single N-Channel 60 V 2.5 mOhm 71 nC OptiMOS Power Mosfet - TO-252-3

***ical: Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, N-CH, 60V, 90A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; P

***ineon SCT: OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS

***ineon: OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 60 V 3.1 mOhm 59 nC OptiMOS Power Mosfet - DPAK

***ment14 APAC: MOSFET, N-CH, 60V, 100A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS

***nell: MOSFET, N-CH, 60V, 100A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 167W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 60 V 3.4 mOhm 98 nC OptiMOS Power Mosfet - DPAK

***nell: MOSFET, N CH, 60V, 100A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; P

*** Stop Electro: Power Field-Effect Transistor, 100A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ure Electronics: Single N-Channel 60 V 12.7 mOhm 52 nC OptiMOS Power Mosfet - DPAK

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO252-3, RoHS

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***emi: P-Channel PowerTrench® MOSFET, 60V, -15A, 100mΩ

***ure Electronics: P-Channel 60 V 100 mOhm Surface Mount PowerTrench Mosfet TO-252-3

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications.

***ark: MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-15A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-10V; Threshold Voltage, Vgs Typ:-1.6V ;RoHS Compliant: Yes

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -15 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 130 / Gate-Source Voltage V = 20 / Fall Time ns = 22 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 34 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.6

***icroelectronics: N-Channel 60V - 0.08Ohm - 12A - DPAK StripFET(TM) II POWER MOSFET

***ure Electronics: N-Channel 60 V 0.1 Ohm Surface Mount STripFET II Power MosFet - TO-252-3

***ark: MOSFET, N CH, 60V, 12A, TO-252, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 12A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ure Electronics: N-Channel 60 V 180 mOhm SMT Enhancement Mode Field Effect Transistor-TO-252-3

***roFlash: Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N, SMD, TO-252, FULL REEL; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.5V; Pow

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Market price

부분 #	제조	설명	재고	가격
IPD025N06NATMA1 DISTI # V72:2272_06377815	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	150	100:$1.5552 25:$1.9050 10:$1.9429 1:$2.5127
IPD025N06NATMA1 DISTI # V36:1790_06377815	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0	2500000:$0.9173 1250000:$0.9188 250000:$0.9919 25000:$1.0990 2500:$1.1160
IPD025N06NATMA1 DISTI # IPD025N06NATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 26A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3716In Stock	1000:$1.2349 500:$1.4905 100:$1.8141 10:$2.2570 1:$2.5100
IPD025N06NATMA1 DISTI # IPD025N06NATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 26A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3716In Stock	1000:$1.2349 500:$1.4905 100:$1.8141 10:$2.2570 1:$2.5100
IPD025N06NATMA1 DISTI # IPD025N06NATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 26A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	5000:$1.0749 2500:$1.1163
IPD025N06NATMA1 DISTI # 33362859	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$1.4109
IPD025N06NATMA1 DISTI # 31690562	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	150	8:$2.5127
IPD025N06NATMA1 DISTI # IPD025N06NATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD025N06NATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.7999 15000:$0.8149 10000:$0.8429 5000:$0.8749 2500:$0.9069
IPD025N06NATMA1 DISTI # IPD025N06N	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R (Alt: IPD025N06N) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
IPD025N06NATMA1 DISTI # SP000988276	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-252 T/R (Alt: SP000988276) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.6929 15000:€0.7429 10000:€0.7999 5000:€0.8669 2500:€1.0399
IPD025N06NATMA1 DISTI # 50Y2018	Infineon Technologies AG	MOSFET Transistor, N Channel, 90 A, 60 V, 0.0021 ohm, 10 V, 2.8 V RoHS Compliant: Yes	1409	1000:$1.1500 500:$1.3800 250:$1.4800 100:$1.5900 50:$1.7200 25:$1.8500 10:$1.9800 1:$2.3300
IPD025N06NATMA1	Infineon Technologies AG	Single N-Channel 60 V 2.5 mOhm 71 nC OptiMOS Power Mosfet - TO-252-3 RoHS: Not Compliant	2500Reel	2500:$0.8600
IPD025N06N DISTI # 726-IPD025N06N	Infineon Technologies AG	MOSFET N-Ch 60V 90A DPAK-2 RoHS: Compliant	11062	1:$2.3100 10:$1.9600 100:$1.5700 500:$1.3700 1000:$1.1400 2500:$1.0600 5000:$1.0200
IPD025N06NATMA1 DISTI # 726-IPD025N06NATMA1	Infineon Technologies AG	MOSFET N-Ch 60V 90A DPAK-2 RoHS: Compliant	1305	1:$2.3100 10:$1.9600 100:$1.5700 500:$1.3700 1000:$1.1400 2500:$1.0600 5000:$1.0200
IPD025N06NATMA1 DISTI # 9064485P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 90A OPTIMOS TO252, RL	2284	200:£1.1350 80:£1.2750 40:£1.4150 8:£1.5380
IPD025N06NATMA1 DISTI # IPD025N06NATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,90A,167W,PG-TO252-3	2104	100:$1.0248 10:$1.0980 3:$1.2275 1:$1.3852
IPD025N06NATMA1 DISTI # 2480813	Infineon Technologies AG	MOSFET, N-CH, 60V, 90A, TO-252-3 RoHS: Compliant	1409	2500:$1.6000 1000:$1.7200 500:$2.0600 100:$2.3700 10:$2.9500 1:$3.4800
IPD025N06NATMA1 DISTI # 2480813RL	Infineon Technologies AG	MOSFET, N-CH, 60V, 90A, TO-252-3 RoHS: Compliant	0	2500:$1.6000 1000:$1.7200 500:$2.0600 100:$2.3700 10:$2.9500 1:$3.4800
IPD025N06NATMA1 DISTI # 2480813	Infineon Technologies AG	MOSFET, N-CH, 60V, 90A, TO-252-3	2700	500:£1.0700 250:£1.1500 100:£1.2200 10:£1.5200 1:£2.0300
IPD025N06NATMA1 DISTI # XSFP00000130347	Infineon Technologies AG	RoHS: Compliant	5000 in Stock0 on Order	5000:$1.1500 2500:$1.2300

IPD025N06NATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes