SI4686DY-T1-GE3

Mfr. #:: SI4686DY-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 30V 18.2A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4686DY-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: SI4686DY-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

포장: 릴

부분 별칭: SI4686DY-GE3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: SOIC-Narrow-8

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 3 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 8 ns

상승 시간: 20 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 13.8 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 9.5 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 20 ns

일반 켜기 지연 시간: 20 ns

채널 모드: 상승

Tags: SI4686DY-T1, SI4686DY-T, SI4686, SI468, SI46, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4686DY-T1-GE3 설명

***et Europe: Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R

***ment14 APAC: N CHANNEL MOSFET, 30V, 18.2A, SOIC

***ponent Sense: MOSFET SO8S N 0.0144R 30V 13A~

***ark: Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:18.2A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes

SI4686DY-T1-GE3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.6930
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2500In Stock	1000:$0.7648 500:$0.9687 100:$1.2491 10:$1.5810 1:$1.7800
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 18.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2500In Stock	1000:$0.7648 500:$0.9687 100:$1.2491 10:$1.5810 1:$1.7800
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R (Alt: SI4686DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.5219 5000:€0.3559 10000:€0.3059 15000:€0.2829 25000:€0.2629
SI4686DY-T1-GE3 DISTI # SI4686DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 13.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4686DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.6189 5000:$0.6009 10000:$0.5759 15000:$0.5599 25000:$0.5449
SI4686DY-T1-GE3 DISTI # 15R5074	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0	1:$0.6170 2500:$0.6120 5000:$0.5940 10000:$0.5720
SI4686DY-T1-GE3 DISTI # 26R1888	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 18.2A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:18.2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):14mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0	1:$1.4900 10:$1.2300 25:$1.1300 50:$1.0400 100:$0.9410 250:$0.8750 500:$0.8090
SI4686DY-T1-GE3 DISTI # 781-SI4686DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V RoHS: Compliant	2486	1:$1.4900 10:$1.2300 100:$0.9410 500:$0.8090 1000:$0.6390 2500:$0.5960 5000:$0.5670 10000:$0.5530

영상	부분 #	설명
	Mfr.#: SI4686DY-T1-E3 OMO.#: OMO-SI4686DY-T1-E3	MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
	Mfr.#: SI4686DY-T1-GE3 OMO.#: OMO-SI4686DY-T1-GE3	MOSFET 30V 18.2A 5.2W 9.5mohm @ 10V
	Mfr.#: SI4686DY OMO.#: OMO-SI4686DY-1190	신규 및 오리지널
	Mfr.#: SI4686DY-T1 OMO.#: OMO-SI4686DY-T1-1190	신규 및 오리지널
	Mfr.#: SI4686DY-T1-E3 OMO.#: OMO-SI4686DY-T1-E3-VISHAY	MOSFET N-CH 30V 18.2A 8-SOIC
	Mfr.#: SI4686DY-T1-GE3 OMO.#: OMO-SI4686DY-T1-GE3-VISHAY	MOSFET N-CH 30V 18.2A 8-SOIC
	Mfr.#: SI4686DY-TI-E3 OMO.#: OMO-SI4686DY-TI-E3-1190	신규 및 오리지널

SI4686DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes