FDB024N04AL7

Mfr. #:: FDB024N04AL7
제조사:: ON Semiconductor
설명:: IGBT Transistors MOSFET 40V 2.4MOHM D2PAK-7L PowerTrench MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDB024N04AL7 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 페어차일드

제품 카테고리: FET - 단일

포장: 릴

단위 무게: 0.046279 oz

장착 스타일: SMD/SMT

패키지 케이스: TO-263-7

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 214 W

최대 작동 온도: + 175 C

최소 작동 온도: - 55 C

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 219 A

Vds-드레인-소스-고장-전압: 40 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 2 mOhms

트랜지스터 극성: N-채널

Qg-Gate-Charge: 84 nC

순방향 트랜스컨덕턴스-최소: 368 S

Tags: FDB024, FDB02, FDB0, FDB

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDB024N04AL7 설명

***C: Trans MOSFET N-CH 40V 219A 7-Pin(6+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N CH, 40V, 100A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:214W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Market price

부분 #	제조	설명	재고	가격
FDB024N04AL7 DISTI # FDB024N04AL7CT-ND	ON Semiconductor	MOSFET N-CH 40V D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDB024N04AL7 DISTI # FDB024N04AL7DKR-ND	ON Semiconductor	MOSFET N-CH 40V D2PAK-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDB024N04AL7 DISTI # FDB024N04AL7TR-ND	ON Semiconductor	MOSFET N-CH 40V D2PAK-7 RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	800:$2.4387
FDB024N04AL7 DISTI # FDB024N04AL7	ON Semiconductor	Trans MOSFET N-CH 40V 219A 7-Pin(6+Tab) D2PAK T/R (Alt: FDB024N04AL7) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	8000:€1.4900 4800:€1.5900 3200:€1.6900 1600:€1.7900 800:€1.8900
FDB024N04AL7 DISTI # FDB024N04AL7	ON Semiconductor	Trans MOSFET N-CH 40V 219A 7-Pin(6+Tab) D2PAK T/R - Bulk (Alt: FDB024N04AL7) RoHS: Not Compliant Min Qty: 120 Container: Bulk	Americas - 0	1200:$2.4900 360:$2.5900 600:$2.5900 120:$2.6900 240:$2.6900
FDB024N04AL7 DISTI # FDB024N04AL7	ON Semiconductor	Trans MOSFET N-CH 40V 219A 7-Pin(6+Tab) D2PAK T/R - Tape and Reel (Alt: FDB024N04AL7) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	4800:$2.2900 8000:$2.2900 800:$2.3900 1600:$2.3900 3200:$2.3900
FDB024N04AL7 DISTI # 92R5518	ON Semiconductor	FET 40V 2.4 MOHM D2PAK / REEL	0	30000:$1.7900 18000:$1.8200 12000:$1.8900 6000:$2.0300 3000:$2.1800 1:$2.2800
FDB024N04AL7 DISTI # 512-FDB024N04AL7	ON Semiconductor	MOSFET 40V 2.4MOHM D2PAK-7L PowerTrench MOSFET RoHS: Compliant	418	1:$3.9100 10:$3.3200 100:$2.8800 250:$2.7300 500:$2.4500 800:$2.0600 2400:$1.9600
FDB024N04AL7	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 100A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	30836	1000:$2.7600 500:$2.9100 100:$3.0300 25:$3.1600 1:$3.4000
FDB024N04AL7	Fairchild Semiconductor Corporation		789

관련 상품

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	Mfr.#: FDB024N08B7L OMO.#: OMO-FDB024N08B7L-1190	신규 및 오리지널
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	Mfr.#: FDB024N06-CUT TAPE OMO.#: OMO-FDB024N06-CUT-TAPE-1190	신규 및 오리지널