S29GL512P11FFIS10

Mfr. #:: S29GL512P11FFIS10
제조사:: SPANSIO
설명:: Flash 512M 3.0V 110ns Parallel NOR Flash
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: S29GL512P11FFIS10 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 스판시오

제품 카테고리: 메모리

시리즈: GL-P

포장: 쟁반

단위 무게: 0.006004 oz

장착 스타일: SMD/SMT

작동 온도 범위: - 40 C to + 85 C

패키지 케이스: BGA-64

작동 온도: -40°C ~ 85°C (TA)

상호 작용: 평행 한

전압 공급: 2.7 V ~ 3.6 V

공급자-장치-패키지: 64-Fortified BGA (13x11)

메모리 크기: 512M (32M x 16)

메모리형: 플래시 - NOR

속도: 110ns

건축학: 부문

포맷 메모리: 플래시

인터페이스 유형: 평행 한

조직: 64 M x 8

공급 전류 최대: 110 mA

데이터 버스 너비: 8 bit

공급 전압 최대: 3.6 V

공급 전압 최소: 2.7 V

타이밍 유형: 비동기

Tags: S29GL512P11FF, S29GL512P11F, S29GL512P11, S29GL512P, S29GL5, S29GL, S29G, S29

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

S29GL512P11FFIS10 설명

***et Europe: SPZS29GL512P11FFIS10 512MB MEMORY FLASH

***et: IC 512M PAGE-MODE FLASH MEMORY

***i-Key: IC FLASH 512MBIT 64FBGA

***p One Stop: NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray

***ress Semiconductor SCT: Parallel NOR Flash Memory, 256 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS

***ure Electronics: GL-P Series 256 M (32 M x 8) 3.6 V 110 ns Surface Mount Flash Memory - FBGA-64

***nell: IC, MEMORY, FLASH, 256MBIT, FBGA-64; Memory Type:Flash - NOR; Memory Size:256Mbit; Memory Configuration:(Not Available); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:110ns; IC Interface Type:CFI; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)

***ress Semiconductor SCT: Parallel NOR Flash Memory, 512 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS

***ow.cn: NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 110ns 64-Pin Fortified BGA Tray

***ure Electronics: GL-S Series 512 Mb (32 M x 16) 3.6 Surface Mount Flash Memory - FBGA-64

***nell: MEMORY, FLASH, 512MB, 3V, 64FBGA; Memory Type:Flash - NOR; Memory Size:512Mbit; Memory Configuration:(Not Available); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:FBGA; No. of Pins:64; Access Time:110ns; IC Interface Type:Parallel; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)

***ical: NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray

***ress Semiconductor SCT: Parallel NOR Flash Memory, 128 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS

***ure Electronics: GL-P Series 128 Mb (16 M x 8) 3.6 V 110 ns SMT Mirrorbit® Flash - FBGA-64

Market price

부분 #	제조	설명	재고	가격
S29GL512P11FFIS10 DISTI # 797-S29GL512P11FFIS1	Cypress Semiconductor	NOR Flash 512M 3.0V 110ns Parallel NOR Flash RoHS: Compliant	153	1:$7.5700 10:$6.9700 25:$6.8700 50:$6.8000 100:$6.1000 250:$5.9200 500:$5.7900

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