IRG4BC30FDPBF

IRG4BC30FDPBF
Mfr. #:
IRG4BC30FDPBF
제조사:
Infineon Technologies
설명:
IGBT Transistors 600V Fast 1-8kHz
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRG4BC30FDPBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4BC30FDPBF DatasheetIRG4BC30FDPBF Datasheet (P4-P6)IRG4BC30FDPBF Datasheet (P7-P9)IRG4BC30FDPBF Datasheet (P10)
ECAD Model:
추가 정보:
IRG4BC30FDPBF 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
패키지/케이스:
TO-220-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
수집기-이미터 포화 전압:
1.59 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
31 A
Pd - 전력 손실:
100 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
포장:
튜브
연속 수집가 현재 IC 최대:
31 A
키:
8.77 mm
길이:
10.54 mm
너비:
4.69 mm
상표:
인피니언 테크놀로지스
게이트-이미터 누설 전류:
100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
1000
하위 카테고리:
IGBT
부품 번호 별칭:
SP001545780
단위 무게:
0.211644 oz
Tags
IRG4BC30FD, IRG4BC30F, IRG4BC3, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IRG4BC30FD Series 600 V 17 A N-Channel Fast CoPack IGBT - TO-220AB
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***ied Electronics & Automation
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
***ineon SCT
Copacked 600V IGBT in a TO-220AB package with a fast 1-8 kHz soft recovery diode, TO220COPAK-3, RoHS
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.59 V Current release time: 160 ns Power dissipation: 100 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:31A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 31A, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Current Temperature:25°C; Device Marking:IRG4BC30FDPBF; Fall Time Max:160ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
부분 # 제조 설명 재고 가격
IRG4BC30FDPBF
DISTI # 33637326
Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-220AB Tube847
  • 500:$2.2176
  • 250:$2.4750
  • 100:$2.6037
  • 50:$2.7324
  • 25:$2.8710
  • 10:$2.9997
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF-ND
Infineon Technologies AGIGBT 600V 31A 100W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube
879In Stock
  • 1000:$1.9794
  • 500:$2.3469
  • 100:$2.7570
  • 10:$3.3650
  • 1:$3.7500
IRG4BC30FDPBF
DISTI # V36:1790_13892378
Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(3+Tab) TO-220AB Tube0
  • 1000000:$1.5690
  • 500000:$1.5730
  • 100000:$2.0600
  • 10000:$3.0150
  • 1000:$3.1800
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF
Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: IRG4BC30FDPBF)
Min Qty: 216
Container: Bulk
Americas - 0
  • 2160:$1.3900
  • 648:$1.4900
  • 1080:$1.4900
  • 216:$1.5900
  • 432:$1.5900
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF
Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRG4BC30FDPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
IRG4BC30FDPBF
DISTI # SP001545780
Infineon Technologies AGTrans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB (Alt: SP001545780)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€1.2900
  • 500:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 25:€1.5900
  • 10:€1.6900
  • 1:€1.7900
IRG4BC30FDPBF
DISTI # 38K2905
Infineon Technologies AGIGBT Single Transistor, 31 A, 1.9 V, 100 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes918
  • 500:$2.2600
  • 250:$2.5300
  • 100:$2.6600
  • 50:$2.7900
  • 25:$2.9300
  • 10:$3.0600
  • 1:$3.6100
IRG4BC30FDPBF
DISTI # 70018428
Infineon Technologies AG600V FAST 1-8 KHZ COPACK IGBT IN A TO-220AB PACKAGE
RoHS: Compliant
0
  • 250:$4.9600
IRG4BC30FDPBF
DISTI # 942-IRG4BC30FDPBF
Infineon Technologies AGIGBT Transistors 600V Fast 1-8kHz
RoHS: Compliant
939
  • 1:$3.5700
  • 10:$3.0300
  • 100:$2.6300
  • 250:$2.5000
  • 500:$2.2400
  • 1000:$1.8900
  • 2000:$1.8000
IRG4BC30FDPBFInternational Rectifier 
RoHS: Not Compliant
130
  • 1000:$1.7800
  • 500:$1.8700
  • 100:$1.9500
  • 25:$2.0300
  • 1:$2.1900
IRG4BC30FDPBF
DISTI # 5411310
Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 31A TO220AB, EA208
  • 500:£1.4100
  • 250:£1.5300
  • 100:£1.6200
  • 25:£1.8200
  • 1:£3.3500
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF
Infineon Technologies AGTransistor: IGBT,600V,31A,45W,TO220AB90
  • 50:$2.0900
  • 10:$2.3600
  • 3:$2.6600
  • 1:$2.9700
IRG4BC30FDPBF
DISTI # IRG4BC30FDPBF
Infineon Technologies AG600V 31A 100W TO220AB
RoHS: Compliant
530
  • 10:€1.6900
  • 50:€1.4900
  • 100:€1.3900
  • 200:€1.3400
IRG4BC30FDPBF
DISTI # IGBT1709
Infineon Technologies AGIGBT 600V17A 1,59VTO-220
RoHS: Compliant
Stock DE - 600Stock HK - 0Stock US - 0
  • 50:$2.0700
  • 150:$1.9500
  • 250:$1.9200
  • 450:$1.8800
  • 850:$1.7700
IRG4BC30FDPBFInternational Rectifier 
RoHS: Compliant
6150
    IRG4BC30FDPBF
    DISTI # 8650381
    Infineon Technologies AGIGBT, 600V, 31A, TO-220772
    • 500:£1.7400
    • 250:£1.9400
    • 100:£2.0500
    • 10:£2.3700
    • 1:£3.1300
    IRG4BC30FDPBF
    DISTI # 8650381
    Infineon Technologies AGIGBT, 600V, 31A, TO-220
    RoHS: Compliant
    773
    • 5000:$2.6700
    • 2000:$2.7700
    • 1000:$2.9100
    • 500:$3.4500
    • 250:$3.8500
    • 100:$4.0400
    • 10:$4.6700
    • 1:$5.4900
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    Mfr.#: STGP20M65DF2

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    IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
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    유효성
    재고:
    939
    주문 시:
    2922
    수량 입력:
    IRG4BC30FDPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$3.57
    US$3.57
    10
    US$3.03
    US$30.30
    100
    US$2.63
    US$263.00
    250
    US$2.50
    US$625.00
    500
    US$2.24
    US$1 120.00
    1000
    US$1.89
    US$1 890.00
    2000
    US$1.80
    US$3 600.00
    5000
    US$1.73
    US$8 650.00
    시작
    최신 제품
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