SPP35N10

Mfr. #:: SPP35N10
제조사:: Infineon Technologies
설명:: MOSFET N-CH 100V 35A TO-220AB
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SPP35N10 데이터 시트
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ECAD Model:

제품 속성
속성 값

Tags: SPP35, SPP3, SPP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SPP35N10 설명

***Yang: Trans MOSFET N-CH 100V 47A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***ponent Stockers USA: 35 A 100 V 0.044 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***i-Key: MOSFET N-CH 100V 35A TO-220AB

*** Electronics: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***icroelectronics: N-Channel 100V - 0.028 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) II POWER MOSFET

***th Star Micro: Transistor MOSFET N-CH 100V 40A 3-Pin (3+Tab) TO-220 Tube

*** Electronics: In a Tube of 50, N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STMicroelectronics STP40NF10L

***ure Electronics: STP40NF10L Series 100 V 33 mOhm N-Ch Low Gate Charge STripFET Mosfet TO-220

***ponent Stockers USA: 40 A 100 V 0.036 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***nell: MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation

***r Electronics: Power Field-Effect Transistor, 40A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***el Electronic: AMPHENOL ICC - GSB3211311WEU - USB Connector, USB Type B, USB 3.0, Receptacle, 9 Positions, Through Hole Mount, Right Angle

***icroelectronics: N-CHANNEL 120V - 0.028 Ohm 40A TO-220 LOW GATE CHARGE STripFET™II POWER MOSFET

***ure Electronics: N-Channel 120 V 32 mOhm Flange Mount StripFET II Power Mosfet - TO-220

***el Electronic: DDR/DDR2/DDR3/DDR3L/LPDDR3/DDR4 Termination Regulator 3A 4.75V to 5.25V 20-Pin HTSSOP T/R

***ical: Trans MOSFET N-CH 120V 40A 3-Pin(3+Tab) TO-220AB Tube

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 40A I(D), 120V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:120V; Continuous Drain Current Id:160A; On Resistance Rds(On):0.032Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.8V; Msl:- Rohs Compliant: Yes

***icroelectronics: N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET

*** Source Electronics: Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 35A TO-220

***ure Electronics: N-Channel 100 V 45 mOhm Flange Mount Power Mosfet - TO-220

***enic: 100V 35A 45´Î@10V15A 115W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***nell: MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 1

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: Power MOSFET, P-Channel, QFET®, -100 V, -8 A, 530 mΩ, TO-220

***Yang: Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***nell: MOSFET, P, TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Vo; Available until stocks are exhausted Alternative available

***r Electronics: Power Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, P, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:65W; MSL:- RoHS Compliant: No

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ure Electronics: Single N-Channel 100 V 12 mOhm 58 nC OptiMOS Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 100V 69A Automotive 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS

***ment14 APAC: MOSFET, N CH, 69A, 100V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:69A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.84V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:69A; Power Dissipation Pd:125W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 69 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 125

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***et: Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail

***emi: N-Channel PowerTrench® MOSFET 100V, 57A, 15mΩ

*** Stop Electro: Power Field-Effect Transistor, 57A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ment14 APAC: MOSFET, N CH, 100V, 57A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:228A

Market price

부분 #	제조	설명	재고	가격
SPP35N10 DISTI # SPP35N10IN-ND	Infineon Technologies AG	MOSFET N-CH 100V 35A TO-220AB RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
SPP35N10 DISTI # 726-SPP35N10	Infineon Technologies AG	MOSFET N-Ch 100V 35A TO220-3 RoHS: Compliant	0
SPP35N10	Infineon Technologies AG	Power Field-Effect Transistor, 35A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	34468	1000:$0.6700 500:$0.7100 100:$0.7400 25:$0.7700 1:$0.8300

영상	부분 #	설명
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	Mfr.#: SPP310R0KTRLF OMO.#: OMO-SPP310R0KTRLF-1098	Wirewound Resistors - Through Hole 10 OHM 10% 3W

SPP35N10

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes