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RGT8NS65DGC9

RGT8NS65DGC9
Mfr. #:
RGT8NS65DGC9
제조사:
Rohm Semiconductor
설명:
IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
RGT8NS65DGC9 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
RGT8NS65DGC9 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
패키지/케이스:
TO-262-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
650 V
수집기-이미터 포화 전압:
1.65 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
8 A
Pd - 전력 손실:
65 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 175 C
포장:
튜브
상표:
로옴 반도체
게이트-이미터 누설 전류:
200 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
50
하위 카테고리:
IGBT
부품 번호 별칭:
RGT8NS65D(TO-262)
Tags
RGT8N, RGT8, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 8A 65000mW 3-Pin(2+Tab) LPDS Tube
***p One Stop Global
Trans IGBT Chip N-CH 650V 8A 65000mW Tube
***
IGBT HIGH VOLT AND CURRENT AP
***ark
Igbt, 650V, 8A, 175Deg C, 65W; Dc Collector Current:8A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:65W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-262; No. Of Pins:3Pins; Operatingrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 8A, 175DEG C, 65W; DC Collector Current:8A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
***nell
IGBT, 650V, 8A, 175°C, 65W; Corrente di Collettore CC:8A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:65W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
영상 부분 # 설명
RGT8NS65DGC9

Mfr.#: RGT8NS65DGC9

OMO.#: OMO-RGT8NS65DGC9

 IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
RGT8NS65DGTL

Mfr.#: RGT8NS65DGTL

OMO.#: OMO-RGT8NS65DGTL

 IGBT Transistors 650V 4A IGBT Stop Trench
RGT8NS65DGTL

Mfr.#: RGT8NS65DGTL

OMO.#: OMO-RGT8NS65DGTL-ROHM-SEMI

 IGBT Transistors 650V 4A Field Stop Trench IGBT
유효성
재고:
Available
주문 시:
1984
수량 입력:
RGT8NS65DGC9의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.72
US$1.72
10
US$1.47
US$14.70
100
US$1.17
US$117.00
500
US$1.02
US$510.00
1000
US$0.85
US$852.00
2500
US$0.79
US$1 982.50
5000
US$0.76
US$3 820.00
10000
US$0.74
US$7 350.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
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