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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| HGTP10N120BN DISTI # HGTP10N120BNFS-ND | ON Semiconductor | IGBT 1200V 35A 298W TO220AB RoHS: Compliant Min Qty: 800 Container: Tube | Limited Supply - Call |
|
| HGTP10N120BN DISTI # HGTP10N120BN | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP10N120BN) RoHS: Compliant Min Qty: 800 Container: Tube | Americas - 0 |
|
| HGTP10N120BN DISTI # HGTP10N120BN | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP10N120BN) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| HGTP10N120BN DISTI # 98B1940 | ON Semiconductor | TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-220AB RoHS Compliant: Yes | 0 |
|
| HGTP10N120BN | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 1696 |
|
| HGTP10N120BNFS | Fairchild Semiconductor Corporation | RoHS: Not Compliant | 257 | |
| HGTP10N120BN DISTI # 512-HGTP10N120BN | ON Semiconductor | IGBT Transistors 35A 1200V N-Ch RoHS: Compliant | 0 | |
| HGTP10N120BN | ON Semiconductor | INSTOCK | 403 |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: HGTP10N120BN G10N120BN |
신규 및 오리지널 |
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Mfr.#: HGTP10N120BN,10N120BN, |
신규 및 오리지널 |
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Mfr.#: HGTP10N40C1D OMO.#: OMO-HGTP10N40C1D-1190 |
Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB |
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Mfr.#: HGTP10N40E1 OMO.#: OMO-HGTP10N40E1-1190 |
Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB |
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Mfr.#: HGTP10N40E1D OMO.#: OMO-HGTP10N40E1D-1190 |
Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB |
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Mfr.#: HGTP10N40F1D OMO.#: OMO-HGTP10N40F1D-1190 |
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB |
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Mfr.#: HGTP10N50C1D OMO.#: OMO-HGTP10N50C1D-1190 |
신규 및 오리지널 |
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Mfr.#: HGTP10N50E1 OMO.#: OMO-HGTP10N50E1-1190 |
Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB |
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Mfr.#: HGTP10N50E1D OMO.#: OMO-HGTP10N50E1D-1190 |
Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB |
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Mfr.#: HGTP10N50F1D OMO.#: OMO-HGTP10N50F1D-1190 |
신규 및 오리지널 |