IKD03N60RFATMA1

Mfr. #:: IKD03N60RFATMA1
제조사:: Infineon Technologies
설명:: IGBT Transistors IGBT w/ INTG DIODE 600V 5A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IKD03N60RFATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: IKD03N60RFATMA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-252-3

장착 스타일:: SMD/SMT

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

수집기-이미터 포화 전압:: 2.2 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 5 A

Pd - 전력 손실:: 53.6 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 175 C

시리즈:: RC

포장:: 릴

키:: 2.41 mm

길이:: 6.73 mm

너비:: 6.22 mm

상표:: 인피니언 테크놀로지스

게이트-이미터 누설 전류:: 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 2500

하위 카테고리:: IGBT

상표명:: 트렌치스톱

부품 번호 별칭:: IKD03N60RF SP000942930

Tags: IKD03, IKD0, IKD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IKD03N60RFATMA1 설명

*** Stop Electro: Insulated Gate Bipolar Transistor, 5A I(C), 600V V(BR)CES, N-Channel, TO-252

***ineon SCT: The RC-Drives 600 V, 3 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer drives market, PG-TO252-3, RoHS

***ineon: RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Washing machines; General purpose inverters; Aircon compressors; Hard switching topologies up to 1.0kW

***ical: Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R

***emi: IGBT, 600V, 3A, Short Circuit Rated

*** Stop Electro: Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252

***S: French Electronic Distributor since 1988

***rchild Semiconductor: Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.

***ical: Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) TO-252

***ineon SCT: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies, PG-TO252-3, RoHS

***ineon: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.

***et: IGBT 600V 6A 30W DPAK

*** Electronic Components: IGBT Transistors Dis High Perf IGBT

***inecomponents.com: Discrete, High Performance IGBT

***rchild Semiconductor: Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

***ical: Trans IGBT Chip N-CH 600V 6A 3-Pin (2+Tab) DPAK T/R

***icontronic: Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***inecomponents.com: POWER IGBT UFS 3A 600V TF=275NS MAX TO-252 TAPE AND REEL

***ser: IGBTs 6a, 600V N-Ch IGBT UFS Series

***ponent Stockers USA: 6 A 600 V N-CHANNEL IGBT TO-252AA

***ical: Trans IGBT Chip N-CH 600V 6.3A 35000mW 3-Pin(2+Tab) DPAK Tube

***ineon SCT: 600V IGBT with UltraFast Soft Recovery Diode, DPAKCOPAK-3, RoHS

***ineon: Target Applications: Dishwasher; Fan; Lighting HID; Refridgeration

***icontronic: Insulated Gate Bipolar Transistor, 6.3A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 6.3A, TO-252AA-3

*** Electronic Components: Rectifiers 600V IGBT Ultrafast 3.7A 1.95V

***ark: TUBE / IG,COPAK DPAK,G5,U,U,N,0.5,600

***nell: IGBT, SINGLE, 600V, 6.3A, TO-252AA-3; DC Collector Current: 6.3A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 35W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No.

***ical: Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R

***icroelectronics: N-channel 3 A, 600 V low drop IGBT

***ure Electronics: STGD3NB60SD Series 600 V 3 A Surface Mount N-Channel PowerMESH IGBT - DPAK-3

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252

***ser: IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3 Amp

IKD03N60RFATMA1 추가 정보

Home Appliance Solutions: Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More

Market price

부분 #	제조	설명	재고	가격
IKD03N60RFATMA1 DISTI # V36:1790_06384425	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 5A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0	2500000:$0.3880 1250000:$0.3883 250000:$0.4204 25000:$0.4796 2500:$0.4897
IKD03N60RFATMA1 DISTI # IKD03N60RFATMA1CT-ND	Infineon Technologies AG	IGBT 600V 6.5A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2296In Stock	1000:$0.5404 500:$0.6845 100:$0.8286 10:$1.0630 1:$1.1900
IKD03N60RFATMA1 DISTI # IKD03N60RFATMA1DKR-ND	Infineon Technologies AG	IGBT 600V 6.5A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2296In Stock	1000:$0.5404 500:$0.6845 100:$0.8286 10:$1.0630 1:$1.1900
IKD03N60RFATMA1 DISTI # IKD03N60RFATMA1TR-ND	Infineon Technologies AG	IGBT 600V 6.5A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.4663 2500:$0.4897
IKD03N60RFATMA1 DISTI # IKD03N60RFATMA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R - Bulk (Alt: IKD03N60RFATMA1) RoHS: Compliant Min Qty: 863 Container: Bulk	Americas - 0	8630:$0.3679 4315:$0.3749 2589:$0.3879 1726:$0.4019 863:$0.4169
IKD03N60RFATMA1 DISTI # IKD03N60RFATMA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R - Tape and Reel (Alt: IKD03N60RFATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4229 15000:$0.4299 10000:$0.4449 5000:$0.4619 2500:$0.4789
IKD03N60RFATMA1 DISTI # SP000942930	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 5A 3-Pin TO-252 T/R (Alt: SP000942930) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.3729 15000:€0.4019 10000:€0.4349 5000:€0.4749 2500:€0.5799
IKD03N60RFATMA1 DISTI # 726-IKD03N60RFATMA1	Infineon Technologies AG	IGBT Transistors IGBT w/ INTG DIODE 600V 5A RoHS: Compliant	2061	1:$1.0500 10:$0.8910 100:$0.6840 500:$0.6050 1000:$0.4770 2500:$0.4230
IKD03N60RFATMA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 5A I(C), 600V V(BR)CES, N-Channel, TO-252 RoHS: Compliant	9000	1000:$0.3800 500:$0.4000 100:$0.4200 25:$0.4400 1:$0.4700
IKD03N60RFATMA1 DISTI # IKD03N60RF	Infineon Technologies AG	600V 5A 53,6W TO252 RoHS: Compliant	0	5:€1.2800 50:€0.6800 200:€0.3800 500:€0.3600

영상	부분 #	설명
	Mfr.#: IKD03N60RFATMA1 OMO.#: OMO-IKD03N60RFATMA1	IGBT Transistors IGBT w/ INTG DIODE 600V 5A
	Mfr.#: IKD03N60RFAATMA1 OMO.#: OMO-IKD03N60RFAATMA1	IGBT Transistors IGBT PRODUCTS
	Mfr.#: IKD03N60RF OMO.#: OMO-IKD03N60RF	IGBT Transistors TRENCH RC Drives Fast 600V 2.5A
	Mfr.#: IKD03N60RF OMO.#: OMO-IKD03N60RF-INFINEON-TECHNOLOGIES	IGBT 600V 5A 53.6W TO252-3
	Mfr.#: IKD03N60RFATMA1 OMO.#: OMO-IKD03N60RFATMA1-INFINEON-TECHNOLOGIES	IGBT 600V 6.5A TO252-3
	Mfr.#: IKD03N60RFAATMA1 OMO.#: OMO-IKD03N60RFAATMA1-INFINEON-TECHNOLOGIES	IGBT Transistors IGBT PRODUCTS

IKD03N60RFATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes