OMO ElectronicOMO Electronic
Expand menu
안녕하세요, 로그인내 계정
0 카트

IXYH40N120C3D1

IXYH40N120C3D1
Mfr. #:
IXYH40N120C3D1
제조사:
Littelfuse
설명:
IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXYH40N120C3D1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYH40N120C3D1 DatasheetIXYH40N120C3D1 Datasheet (P4-P6)IXYH40N120C3D1 Datasheet (P7)
ECAD Model:
추가 정보:
IXYH40N120C3D1 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
IGBT 트랜지스터
기술:
시
패키지/케이스:
TO-247AD-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
4.8 V
최대 게이트 이미터 전압:
30 V
25C에서 연속 수집기 전류:
64 A
Pd - 전력 손실:
480 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
시리즈:
IXYH40N120
포장:
튜브
연속 수집가 현재 IC 최대:
64 A
상표:
익시스
게이트-이미터 누설 전류:
100 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
30
하위 카테고리:
IGBT
상표명:
XPT
단위 무게:
1.340411 oz
Tags
IXYH40N1, IXYH4, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 64 A Flange Mount High-Speed IGBT - TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
***i-Key
IGBT 1200V 64A 480W TO247
***trelec
IGBT, 1.2kV, 80A, TO-247AD
***S
new, original packaged
***el Nordic
Contact for details
***ure Electronics
IXYH30N120C3 - 1200 V 66 A High Speed XPT GenX3 IGBT Flange Mount - TO-247
***ical
Trans IGBT Chip N-CH 1.2KV 75A Automotive 3-Pin(3+Tab) TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Transistor, Igbt, 1.2Kv, 75A, To-247 Rohs Compliant: Yes
***i-Key
IGBT 1200V 75A 380W TO247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
new, original packaged
***el Nordic
Contact for details
***(Formerly Allied Electronics)
Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC
***p One Stop Global
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH50U Series N-Channel 1.2 kV 45 A Ultrafast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.78 V Current release time: 280 ns Power dissipation: 200 W
***ment14 APAC
SINGLE IGBT, 1.2KV, 45A; Transistor Type; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:3.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Fall Time Max:500ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:180A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip Negative Channel 1.2K Volt 45A 3-Pin(3+Tab) TO-247AC
***ineon SCT
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***ure Electronics
IRG4PH50U series 1200 V 45 A Through Hole N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.56 V Current release time: 180 ns Power dissipation: 200 W
***nell
IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:3.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:180A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:260ns; Time, Rise:24ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/25 FAST IGBT FSII T
***i-Key
IGBT FIELD STOP 1200V 50A TO247
***ical
Trans IGBT Chip N=-CH 1200V 64A 417000mW 3-Pin(3+Tab) TO-247AB Tube
***ark
Igbt, 1.2Kv, 64A, 150Deg C, 417W Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
부분 # 제조 설명 재고 가격
IXYH40N120C3D1
DISTI # IXYH40N120C3D1-ND		IXYS CorporationIGBT 1200V 64A 480W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		51In Stock
  • 510:$7.6981
  • 270:$8.4430
  • 120:$9.1880
  • 30:$10.1813
  • 10:$11.1750
  • 1:$12.4200
IXYH40N120C3D1
DISTI # 747-IXYH40N120C3D1		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT60
  • 1:$12.4100
  • 10:$11.1800
  • 25:$10.1800
  • 50:$9.3000
  • 100:$9.1900
  • 250:$8.3700
  • 500:$7.7000
  • 1000:$6.7100
IXYH40N120C3D1
DISTI # IXYH40N120C3D1		IXYS Corporation1200V 64A 480W TO247AD
RoHS: Compliant		17
  • 1:€10.1500
  • 5:€7.1500
  • 30:€6.1500
  • 60:€5.9500
IXYH40N120C3D1
DISTI # XSFP00000012546		IXYS CorporationPower Field-Effect Transistor,3.6AI(D),40V,0.056ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-236AB
RoHS: Compliant		1822
  • 30:$11.8900
  • 1822:$11.1500
영상 부분 # 설명
IR2214SSPBF

Mfr.#: IR2214SSPBF

OMO.#: OMO-IR2214SSPBF

 Gate Drivers 1200V HALF BRDG DRVR IC
ISO7340FCQDWRQ1

Mfr.#: ISO7340FCQDWRQ1

OMO.#: OMO-ISO7340FCQDWRQ1

 Digital Isolators Auto device of ISO7340FC
MM3Z11VST1G

Mfr.#: MM3Z11VST1G

OMO.#: OMO-MM3Z11VST1G

 Zener Diodes SOD-323 COPPER PB FR
PB3506-E3/45

Mfr.#: PB3506-E3/45

OMO.#: OMO-PB3506-E3-45

 Bridge Rectifiers 35 Amp 600 Volt Enhanced Power
IKW40N120CS6XKSA1

Mfr.#: IKW40N120CS6XKSA1

OMO.#: OMO-IKW40N120CS6XKSA1

 IGBT Transistors INDUSTRY 14
IKY75N120CH3XKSA1

Mfr.#: IKY75N120CH3XKSA1

OMO.#: OMO-IKY75N120CH3XKSA1

 IGBT Transistors
IKW40N120H3

Mfr.#: IKW40N120H3

OMO.#: OMO-IKW40N120H3

 IGBT Transistors IGBT PRODUCTS
IGW40N120H3

Mfr.#: IGW40N120H3

OMO.#: OMO-IGW40N120H3

 IGBT Transistors IGBT PRODUCTS
IRLB8314PBF

Mfr.#: IRLB8314PBF

OMO.#: OMO-IRLB8314PBF

 MOSFET TRENCH_MOSFETS
B65811J0100A087

Mfr.#: B65811J0100A087

OMO.#: OMO-B65811J0100A087

 Ferrite Cores & Accessories RM8 N87 100 +3%-3%
유효성
재고:
35
주문 시:
2018
수량 입력:
IXYH40N120C3D1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$12.41
US$12.41
10
US$11.18
US$111.80
25
US$10.18
US$254.50
50
US$9.30
US$465.00
100
US$9.19
US$919.00
250
US$8.37
US$2 092.50
500
US$7.70
US$3 850.00
1000
US$6.71
US$6 710.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
시작
최신 제품
More Newest Products
Top