AUIRL1404ZSTRL

Mfr. #:: AUIRL1404ZSTRL
제조사:: Infineon Technologies
설명:: MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: AUIRL1404ZSTRL 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-263-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 40 V

Id - 연속 드레인 전류:: 180 A

Rds On - 드레인 소스 저항:: 5.9 mOhms

Vgs - 게이트 소스 전압:: 16 V

Qg - 게이트 차지:: 75 nC

최소 작동 온도:: - 55 C

Pd - 전력 손실:: 200 W

구성:: 하나의

채널 모드:: 상승

자격:: AEC-Q101

포장:: 릴

키:: 4.4 mm

길이:: 10 mm

트랜지스터 유형:: 1 N-Channel

너비:: 9.25 mm

상표:: 인피니언 테크놀로지스

가을 시간:: 49 ns

상품 유형:: MOSFET

상승 시간:: 180 ns

공장 팩 수량:: 800

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 30 ns

일반적인 켜기 지연 시간:: 19 ns

부품 번호 별칭:: SP001518266

단위 무게:: 0.139332 oz

Tags: AUIRL1404ZST, AUIRL1404ZS, AUIRL1404Z, AUIRL1, AUIRL, AUIR, AUI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

AUIRL1404ZSTRL 설명

***(Formerly Allied Electronics): AUIRL1404ZS N-channel MOSFET Transistor; 180 A; 40 V; 4-Pin D2PAK

***ineon SCT: Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 40 V 5.9 mOhm 75 nC Automotive HEXFET® Power Mosfet - D2PAK

***Yang: Trans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.1pF 50Volts C0G +/-0.1pF

***ark: MOSFET,W DIODE,N CH,40V,160A,D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating ;RoHS Compliant: Yes

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - D2PAK

***et: Trans MOSFET N-CH 40V 208A 3-Pin(2+Tab) D2PAK T/R

*** Stop Electro: Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 40V, 120A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 208 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 2 / Gate-Source Voltage V = 20 / Fall Time ns = 68 / Rise Time ns = 68 / Turn-OFF Delay Time ns = 115 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 208

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ure Electronics: Single N-Channel 40 V 0.004 Ohm 140 nC HEXFET® Power Mosfet - TO-262-3

***nell: MOSFET, N, 40V, 160A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power D

***ineon SCT: Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 40V 193A Automotive 3-Pin(2+Tab) D2PAK T/R

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: Single N-Channel 40 V 2.3 mOhm 107 nC Automotive HEXFET® Power Mosfet - D2PAK

***nell: MOSFET, 40V, 120A, Q101, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow

***ineon: Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Battery Switch; Brushed Motor Drive; Brushless Motor Drive; DC-DC; Electric Power Steering; Glowplug; PTC Heater; Relay Replacement

***r Electronics: Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH Si 40V 120A Automotive 3-Pin(2+Tab) H2PAK T/R

***icroelectronics: Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-2 package

***el Electronic: Ceramic Capacitors 1000pF Radial, Disc ±10% B Bulk 1 (Unlimited) General Purpose Through Hole -25°C~105°C CAP CER 1000PF 2KV RADIAL

***ow.cn: Trans MOSFET P-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK

***ure Electronics: Single P-Channel 40 V 4 mOhm 375 W SMT Automotive Power Mosfet - TO-263

***ark: P-Channel 40-V (D-S) 175C Mosfet Rohs Compliant: Yes

***ment14 APAC: MOSFET, P-CH, 40V, 120A, 175DEG C, 375W;

***S: MOSFET P-CHANNEL 40V 120V TO-263

***r Electronics: Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***icroelectronics: Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package

***et: Trans MOSFET N-CH 40V 120A 6-Pin H2PAK T/R

***icroelectronics SCT: Automotive Power Discrete, 40V, 120A, H2PAK-6, Tape and Reel

***icroelectronics: N-channel 40 V, 2.7 mOhm typ., 160 A STripFET F6 Power MOSFET in H2PAK-2 package

***ca Corp: Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 40V 120A 3-Pin H2PAK-2 T/R

***(Formerly Allied Electronics): MOSFET 40V 0.032 / 0.046 OHM LL

***icroelectronics SCT: Power MOSFETs, 40V, 160A, H2PAK-2, Tape and Reel

***S: French Electronic Distributor since 1988

Market price

부분 #	제조	설명	재고	가격
AUIRL1404ZSTRL DISTI # AUIRL1404ZSTRL-ND	Infineon Technologies AG	MOSFET N-CH 40V 160A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	800:$1.9813
AUIRL1404ZSTRL DISTI # AUIRL1404ZSTRL	Infineon Technologies AG	Trans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRL1404ZSTRL) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$1.6900 1600:$1.5900 3200:$1.5900 4800:$1.4900 8000:$1.4900
AUIRL1404ZSTRL DISTI # SP001518266	Infineon Technologies AG	Trans MOSFET N-CH 40V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001518266) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	800:€1.5900 1600:€1.5900 3200:€1.4900 4800:€1.3900 8000:€1.2900
AUIRL1404ZSTRL DISTI # 942-AUIRL1404ZSTRL	Infineon Technologies AG	MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms RoHS: Compliant	0	1:$3.1800 10:$2.7100 100:$2.3500 250:$2.2300 500:$2.0000 800:$1.6900 2400:$1.6000 4800:$1.5400

관련 상품

영상	부분 #	설명
	Mfr.#: AUIRL1404Z OMO.#: OMO-AUIRL1404Z	MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
	Mfr.#: AUIRL1404ZSTRL OMO.#: OMO-AUIRL1404ZSTRL	MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
	Mfr.#: AUIRL1404S OMO.#: OMO-AUIRL1404S	MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
	Mfr.#: AUIRL1404Z OMO.#: OMO-AUIRL1404Z-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
	Mfr.#: AUIRL1404S OMO.#: OMO-AUIRL1404S-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
	Mfr.#: AUIRL1404ZS OMO.#: OMO-AUIRL1404ZS-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms
	Mfr.#: AUIRL1404STRL OMO.#: OMO-AUIRL1404STRL-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 160A D2PAK
	Mfr.#: AUIRL1404ZSTRLPBF OMO.#: OMO-AUIRL1404ZSTRLPBF-1190	신규 및 오리지널
	Mfr.#: AUIRL1404ZL OMO.#: OMO-AUIRL1404ZL-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 160A TO262
	Mfr.#: AUIRL1404ZSTRL OMO.#: OMO-AUIRL1404ZSTRL-INFINEON-TECHNOLOGIES	MOSFET N-CH 40V 160A D2PAK

유효성

재고:: 800
주문 시:: 2783
수량 입력:

AUIRL1404ZSTRL의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$3.18~~; ~~US$3.18~~

10: ~~US$2.71~~; ~~US$27.10~~

100: ~~US$2.35~~; ~~US$235.00~~

250: ~~US$2.23~~; ~~US$557.50~~

500: ~~US$2.00~~; ~~US$1 000.00~~

시작

AUIRL1404ZST 3
AUIRL1404ZS 4
AUIRL1404Z 6
AUIRL1 9
AUIRL 170
AUIR 1190
AUI 1423

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AUIRL1404ZSTRL

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes