IGW30N100TFKSA1

IGW30N100TFKSA1
Mfr. #:
IGW30N100TFKSA1
제조사:
Infineon Technologies
설명:
IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IGW30N100TFKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1000 V
수집기-이미터 포화 전압:
1.8 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
60 A
Pd - 전력 손실:
412 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
트렌치스톱 IGBT
포장:
튜브
연속 수집가 현재 IC 최대:
30 A
상표:
인피니언 테크놀로지스
게이트-이미터 누설 전류:
600 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
240
하위 카테고리:
IGBT
상표명:
트렌치스톱
부품 번호 별칭:
IGW30N100T IGW3N1TXK SP000380845
단위 무게:
0.014110 oz
Tags
IGW30N1, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
TransIGBTChipNCH1000V60A412000mWAutomotive3Pin3TabTO247Tube
***ark
TransistorIgbt1Kv60ATo247;DcCollectorCurrent60A;CollectorEmitterSaturationVoltageVceOn155V;PowerDissipationPd412W;CollectorEmitterVoltageVBrCeo1Kv;TransistorCaseStyleto247;NoOfPins3Pins;RohsCompliantYes
***ineon
InfineonsTRENCHSTOPIGBTtechnologyleadstosignificantimprovementofstaticaswellasdynamicperformanceofthedeviceduetocombinationoftrenchtopcellandfiledstopconceptCombinationofIGBTwithsoftrecoveryEmitterControlledDiodefurtherminimizestheturnonlossesThehighestefficiencyisreachedduetothebestcompromisebetweenswitchingandconductionlossesSummaryofFeaturesLowestVcesatdropforlowerconductionlosses;Lowswitchinglosses;EasyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVcesat;VerysoftfastrecoveryantiparallelEmitterControlledDiode;Highruggednesstemperaturestablebehavior;LowEMIemissions;Lowgatecharge;VerytightparameterdistributionBenefitsHighestefficiencylowconductionandswitchinglosses;Comprehensiveportfolioin600Vand1200Vforflexibilityofdesign;HighdevicereliabilityTargetApplicationsUPS;SolarInverters;MajorHomeAppliances;Welding;Airconditioning;IndustrialDrives;Otherhardswitchingapplications
부분 # 제조 설명 재고 가격
IGW30N100TFKSA1
DISTI # V99:2348_06378671
Infineon Technologies AGTrans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
244
  • 100:$3.9750
  • 10:$4.6210
  • 1:$6.0313
IGW30N100TFKSA1
DISTI # IGW30N100TFKSA1-ND
Infineon Technologies AGIGBT 1000V 60A 412W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IGW30N100TFKSA1
    DISTI # 26197476
    Infineon Technologies AGTrans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    244
    • 3:$6.0313
    IGW30N100TFKSA1
    DISTI # 13AC9000
    Infineon Technologies AGTRANSISTOR, IGBT, 1KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:412W,Collector Emitter Voltage V(br)ceo:1kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes0
      IGW30N100T
      DISTI # 726-IGW30N100T
      Infineon Technologies AGIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      RoHS: Compliant
      153
      • 1:$5.5100
      • 10:$4.6800
      • 100:$4.0600
      • 250:$3.8500
      • 500:$3.4600
      IGW30N100TFKSA1
      DISTI # 726-IGW30N100TFKSA1
      Infineon Technologies AGIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      RoHS: Compliant
      118
      • 1:$5.5100
      • 10:$4.6800
      • 100:$4.0600
      • 250:$3.8500
      • 500:$3.4600
      IGW30N100TFKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-247AD
      RoHS: Compliant
      69
      • 1000:$2.3700
      • 500:$2.4900
      • 100:$2.6000
      • 25:$2.7100
      • 1:$2.9200
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      주문 시:
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      수량 입력:
      IGW30N100TFKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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