SMMBTA06WT1G

Mfr. #:: SMMBTA06WT1G
제조사:: ON Semiconductor
설명:: Bipolar Transistors - BJT SS GP XSTR NPN 80V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SMMBTA06WT1G 데이터 시트
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HTML Datasheet:: SMMBTA06WT1G Datasheet SMMBTA06WT1G Datasheet (P4-P5)
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SC-70-3

트랜지스터 극성:: NPN

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 80 V

컬렉터-베이스 전압 VCBO:: 80 V

이미터-베이스 전압 VEBO:: 4 V

수집기-이미터 포화 전압:: 0.25 V

최대 DC 수집기 전류:: 500 mA

이득 대역폭 곱 fT:: 100 MHz

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

시리즈:: MMBTA06WT1

포장:: 릴

상표:: 온세미컨덕터

지속적인 수집가 전류:: 500 mA

DC 수집기/기본 이득 hfe 최소:: 100

Pd - 전력 손실:: 150 mW

상품 유형:: BJT - 양극성 트랜지스터

자격:: AEC-Q101

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

단위 무게:: 0.000219 oz

Tags: SMMBTA0, SMMBTA, SMMBT, SMMB, SMM

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SMMBTA06WT1G 설명

***ca Corp: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: SMMBTA06 Series 80 V 500 mA Surface Mount NPN Silicon Transistor - SC-70-3

***ow.cn: Trans GP BJT NPN 80V 0.5A 150mW Automotive 3-Pin SC-70 T/R

***(Formerly Allied Electronics): Transistor, Bipolar,Si,NPN,Driver,VCEO 80VDC,IC 500mA,PD 225mW,SOT-23,VCBO 80VDC

***itex: Transistor: NPN; bipolar; 80V; 0.5A; 225mW; -55+150 deg.C; SMD; SOT23

***enic: 60V 225mW 500mA NPN SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS

***p One Stop: Trans GP BJT NPN 80V 0.5A 300mW Automotive 3-Pin SOT-23 T/R

***ure Electronics: MMBTA06L Series NPN 80 V 500 mA SMT Driver Transistor - SOT-23

***SIT Distribution GmbH: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

***Yang: Transistor GP BJT NPN 80V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt

***trelec: Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 500 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 80 / Emitter-Base Voltage (Vebo) V = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 300 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 250 / Reflow Temperature Max. °C = 260

***(Formerly Allied Electronics): ON Semi MMBTA06LT3G NPN Bipolar Transistor; 0.5 A; 80 V; 3-Pin SOT-23

***eco: Trans General Purpose BJT NPN 80 Volt 0.5A 3-Pin SOT-23 Tape and Reel

***roFlash: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236

***ure Electronics: MMBT Series 80 V 500 mA Surface Mount NPN Silicon Driver Transistor - SOT-23

***ark: BIPOLAR TRANSISTOR, NPN, 80V SOT-23, FULL REEL; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:500mA; Power Dissipation:225mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes

***nell: TRANSISTOR, NPN, 80V, 0.5A, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

***eco: Transistor General Purpose BJT NPN 80 Volt 0.5 Amp 3-Pin SOT-23 Tape And Reel

***ure Electronics: MMBTA06 Series NPN 80 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3

***icontronic: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

***ment14 APAC: Transistor, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW;

***nell: TRANSISTOR, NPN, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 300mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

***ca Corp: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

*** Electronic Components: Bipolar Transistors - BJT NPN Transistor Medium Power

***emi: 500 mA, 80 V NPN Small Signal Bipolar Junction Transistor

***Yang: Transistor GP BJT NPN 80V 0.5A 3-Pin TO-92 Bulk - Bulk

***ure Electronics: MPSAXX Series 80 V CE Breakdown 0.5 A NPN General Purpose Amplifier - TO-92

***fin: Transistor NPN MPSA06 FAIRCHILD milliampere=500 TO92

***ment14 APAC: Transistor, NPN, 80V, 0.5A, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation

***rchild Semiconductor: NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.

***ark: Transistor, Npn, 80V, 0.5A, To-226Aa; Transistor Polarity:npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:625Mw; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes

***nell: TRANSISTOR, NPN, 80V, 0.5A, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 625mW; Termination Type: Through Hole

***ca Corp: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: MMSTA Series NPN 200 mW 80 V 500 mA SMT Small Signal Transistor - SOT-323

***(Formerly Allied Electronics): Transistor NPN 80V 0.5A SOT323 | Diodes Inc MMSTA06-7-F

***eco: BIPOLAR TRANSISTOR NPN SOT-323 ROHS 3K

***nell: TRANSISTOR, NPN, SOT323; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 200mW; DC Collector Current: 500mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 500mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

***ca Corp: Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: SSTA06 Series 80 V 0.5 A SMT NPN General Purpose Transistor - SST-3

***ark: Trans Gp Bjt Npn 80V 0.5A 3-Pin Sst T/r Rohs Compliant: Yes

***nell: TRANSISTOR SOT-23 NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 200mW; DC Collector Current: 100mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 250mV; Current Ic Continuous a Max: 100mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: General Purpose

Market price

부분 #	제조	설명	재고	가격
SMMBTA06WT1G DISTI # V36:1790_07284058	ON Semiconductor	Trans GP BJT NPN 80V 0.5A 150mW Automotive 3-Pin SC-70 T/R RoHS: Compliant	0
SMMBTA06WT1G DISTI # SMMBTA06WT1GOSCT-ND	ON Semiconductor	TRANS NPN 80V 0.5A SC70-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7621In Stock	1000:$0.0846 500:$0.1103 100:$0.1666 10:$0.2940 1:$0.4000
SMMBTA06WT1G DISTI # SMMBTA06WT1GOSDKR-ND	ON Semiconductor	TRANS NPN 80V 0.5A SC70-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7621In Stock	1000:$0.0846 500:$0.1103 100:$0.1666 10:$0.2940 1:$0.4000
SMMBTA06WT1G DISTI # SMMBTA06WT1GOSTR-ND	ON Semiconductor	TRANS NPN 80V 0.5A SC70-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	75000:$0.0476 30000:$0.0536 15000:$0.0571 6000:$0.0643 3000:$0.0714
SMMBTA06WT1G DISTI # SMMBTA06WT1G	ON Semiconductor	Trans GP BJT NPN 80V 0.5A 3-Pin SC-70 T/R (Alt: SMMBTA06WT1G) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.0846 6000:€0.0658 12000:€0.0538 18000:€0.0455 30000:€0.0423
SMMBTA06WT1G DISTI # SMMBTA06WT1G	ON Semiconductor	Trans GP BJT NPN 80V 0.5A 3-Pin SC-70 T/R - Tape and Reel (Alt: SMMBTA06WT1G) RoHS: Compliant Min Qty: 9000 Container: Reel	Americas - 0	9000:$0.0444 15000:$0.0442 24000:$0.0436 45000:$0.0430 90000:$0.0420
SMMBTA06WT1G DISTI # SMMBTA06WT1G	ON Semiconductor	Trans GP BJT NPN 80V 0.5A 3-Pin SC-70 T/R (Alt: SMMBTA06WT1G) RoHS: Compliant Min Qty: 9000 Container: Tape and Reel	Asia - 0	9000:$0.0680 18000:$0.0654 27000:$0.0630 45000:$0.0607 90000:$0.0586 225000:$0.0567 450000:$0.0557
SMMBTA06WT1G DISTI # 76T7282	ON Semiconductor	SS SC70 GP XSTR NPN 80V / REEL	0	27000:$0.0520 9000:$0.0530 1000:$0.0640 500:$0.0980 250:$0.1010 100:$0.1040 50:$0.2400 1:$0.4260
SMMBTA06WT1G DISTI # 863-SMMBTA06WT1G	ON Semiconductor	Bipolar Transistors - BJT SS GP XSTR NPN 80V RoHS: Compliant	7701	1:$0.3800 10:$0.2460 100:$0.1060 1000:$0.0810 3000:$0.0620 9000:$0.0550 24000:$0.0510

영상	부분 #	설명
	Mfr.#: SMMBTA56WT1G OMO.#: OMO-SMMBTA56WT1G	Bipolar Transistors - BJT SS GP XSTR PNP 80V
	Mfr.#: BSS138N H6433 OMO.#: OMO-BSS138N-H6433	MOSFET N-Ch 60V 230mA SOT-23-3
	Mfr.#: FDS8935 OMO.#: OMO-FDS8935	MOSFET -80V Dual P-Channel PowerTrench MOSFET
	Mfr.#: BAT54SWFILMY OMO.#: OMO-BAT54SWFILMY	Schottky Diodes & Rectifiers Automotive small signal Schottky diodes
	Mfr.#: CRCW060310K0FKEA OMO.#: OMO-CRCW060310K0FKEA-VISHAY-DALE	Thick Film Resistors - SMD 1/10watt 10Kohms 1%
	Mfr.#: CRCW06031K00FKEA OMO.#: OMO-CRCW06031K00FKEA-VISHAY-DALE	Thick Film Resistors - SMD 1/10watt 1.0Kohms 1%
	Mfr.#: SMMBTA56WT1G OMO.#: OMO-SMMBTA56WT1G-ON-SEMICONDUCTOR	Bipolar Transistors - BJT SS GP XSTR PNP 80V
	Mfr.#: BSS138N H6433 OMO.#: OMO-BSS138N-H6433-1190	N-CH 60V 0,23A 3500mOhm SOT-23
	Mfr.#: BAT54SWFILMY OMO.#: OMO-BAT54SWFILMY-STMICROELECTRONICS	DIODE ARRAY
	Mfr.#: FDS8935 OMO.#: OMO-FDS8935-ON-SEMICONDUCTOR	MOSFET 2P-CH 80V 2.1A 8SOIC

SMMBTA06WT1G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes