SI4166DY-T1-GE3

Mfr. #:: SI4166DY-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 30V 30.5A 8-SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4166DY-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SI4166DY-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

포장: 릴

부분 별칭: SI4166DY-GE3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: SOIC-Narrow-8

기술: 시

채널 수: 1 Channel

구성: 싱글 쿼드 드레인 트리플 소스

트랜지스터형: 1 N-Channel

Pd 전력 손실: 3 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 15 ns

상승 시간: 19 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 20.5 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 4.5 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 35 ns

일반 켜기 지연 시간: 30 ns

순방향 트랜스컨덕턴스-최소: 65 S

채널 모드: 상승

Tags: SI4166DY-T, SI4166D, SI4166, SI416, SI41, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4166DY-T1-GE3 추가 정보

TrenchFET® Gen III Power MOSFET: The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4166DY-T1-GE3 DISTI # SI4166DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 30.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1130In Stock	1000:$0.7138 500:$0.9041 100:$1.1659 10:$1.4750 1:$1.6700
SI4166DY-T1-GE3 DISTI # SI4166DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 30.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1130In Stock	1000:$0.7138 500:$0.9041 100:$1.1659 10:$1.4750 1:$1.6700
SI4166DY-T1-GE3 DISTI # SI4166DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 30.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.6468
SI4166DY-T1-GE3 DISTI # SI4166DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4166DY-T1-GE3 DISTI # SI4166DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4166DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.6329 5000:$0.6319 10000:$0.6299 15000:$0.6279 25000:$0.6269
SI4166DY-T1-GE3 DISTI # SI4166DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R (Alt: SI4166DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.6869 5000:€0.4689 10000:€0.4029 15000:€0.3719 25000:€0.3469
SI4166DY-T1-GE3 DISTI # 85W3205	Vishay Intertechnologies	Trans MOSFET N-CH 30V 20.5A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 85W3205) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.7990
SI4166DY-T1-GE3 DISTI # 97W2647	Vishay Intertechnologies	MOSFET, N CH, 30V, 30.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:30.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0032ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power , RoHS Compliant: Yes	2250	1:$1.4700 10:$1.2100 25:$1.1200 50:$1.0200 100:$0.9290 500:$0.7990 1000:$0.7010
SI4166DY-T1-GE3 DISTI # 781-SI4166DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	4268	1:$1.4700 10:$1.2100 100:$0.9290 500:$0.7990 1000:$0.7560 2500:$0.7000
SI4166DY-T1-GE3 DISTI # 2335305	Vishay Intertechnologies	MOSFET, N CH, 30V, 30.5A, SOIC RoHS: Compliant	2250	1:$2.3400 10:$1.9200 100:$1.4700 500:$1.2600 1000:$1.1200 2500:$1.1100
SI4166DY-T1-GE3 DISTI # 2335305	Vishay Intertechnologies	MOSFET, N CH, 30V, 30.5A, SOIC RoHS: Compliant	4741	5:£1.1300 25:£0.9270 100:£0.7100 250:£0.6610 500:£0.6100
SI4166DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 5000	2500:$0.4080 5000:$0.3860 10000:$0.3730

영상	부분 #	설명
	Mfr.#: SI4166DY-T1-GE3 OMO.#: OMO-SI4166DY-T1-GE3	MOSFET 30V Vds 20V Vgs SO-8
	Mfr.#: SI4166DY OMO.#: OMO-SI4166DY-1190	신규 및 오리지널
	Mfr.#: SI4166DY-T1-E3 OMO.#: OMO-SI4166DY-T1-E3-1190	신규 및 오리지널
	Mfr.#: SI4166DY-T1-GE3 OMO.#: OMO-SI4166DY-T1-GE3-VISHAY	MOSFET N-CH 30V 30.5A 8-SOIC
	Mfr.#: SI4166DY-T1-GE3,SI4166DY OMO.#: OMO-SI4166DY-T1-GE3-SI4166DY-1190	신규 및 오리지널

SI4166DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes