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SI4162DY-T1-GE3

SI4162DY-T1-GE3
Mfr. #:
SI4162DY-T1-GE3
제조사:
Vishay
설명:
MOSFET N-CH 30V 19.3A 8-SOIC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI4162DY-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SI4162DY-T1-GE3 추가 정보
제품 속성
속성 값
제조사
비쉐이
제품 카테고리
FET - 단일
포장
릴
부분 별칭
SI4162DY-GE3
단위 무게
0.006596 oz
장착 스타일
SMD/SMT
패키지 케이스
SOIC-Narrow-8
기술
시
채널 수
1 Channel
구성
싱글 쿼드 드레인 트리플 소스
트랜지스터형
1 N-Channel
Pd 전력 손실
2.5 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
10 ns
상승 시간
15 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
19.3 A
Vds-드레인-소스-고장-전압
30 V
Rds-On-Drain-Source-Resistance
8.2 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
25 ns
일반 켜기 지연 시간
20 ns
순방향 트랜스컨덕턴스-최소
70 S
채널 모드
상승
Tags
SI4162DY-T, SI4162D, SI4162, SI416, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.0079 Ohms Surface Mount Power Mosfet - SOIC-8
***C
MOSFET N-CH 30V 19.3A 8-SOIC MOSFET N-CH 30V 19.3A 8-SOIC
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:19.3A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
***nell
MOSFET,N CH,30V,19.3A,SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:19.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Current Id Max:13.6A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:20V
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
부분 # 제조 설명 재고 가격
SI4162DY-T1-GE3
DISTI # V36:1790_07432597		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R
RoHS: Compliant		32500
  • 2500:$0.3377
SI4162DY-T1-GE3
DISTI # V72:2272_07432597		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R
RoHS: Compliant		4227
  • 3000:$0.3016
  • 1000:$0.3317
  • 500:$0.3770
  • 250:$0.4305
  • 100:$0.4324
  • 25:$0.5114
  • 10:$0.5143
  • 1:$0.5733
SI4162DY-T1-GE3
DISTI # SI4162DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 19.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3139In Stock
  • 1000:$0.4351
  • 500:$0.5438
  • 100:$0.7342
  • 10:$0.9520
  • 1:$1.0900
SI4162DY-T1-GE3
DISTI # SI4162DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 19.3A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3139In Stock
  • 1000:$0.4351
  • 500:$0.5438
  • 100:$0.7342
  • 10:$0.9520
  • 1:$1.0900
SI4162DY-T1-GE3
DISTI # SI4162DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 19.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 2500:$0.3828
SI4162DY-T1-GE3
DISTI # 30544067		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R
RoHS: Compliant		32500
  • 2500:$0.3377
SI4162DY-T1-GE3
DISTI # 25778319		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R
RoHS: Compliant		4227
  • 3000:$0.3016
  • 1000:$0.3317
  • 500:$0.3770
  • 250:$0.4305
  • 100:$0.4324
  • 35:$0.5114
SI4162DY-T1-GE3
DISTI # 29754216		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.3038
SI4162DY-T1-GE3
DISTI # SI4162DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R (Alt: SI4162DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.3779
  • 5000:€0.2579
  • 10000:€0.2219
  • 15000:€0.2049
  • 25000:€0.1899
SI4162DY-T1-GE3
DISTI # SI4162DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4162DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.2199
  • 5000:$0.2139
  • 10000:$0.2049
  • 15000:$0.1989
  • 25000:$0.1939
SI4162DY-T1-GE3
DISTI # 05W6941		Vishay IntertechnologiesTrans MOSFET N-CH 30V 13.6A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 05W6941)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.5760
SI4162DY-T1-GE3
DISTI # 05W6941		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 19.3A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:19.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):6.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes59
  • 1:$1.1500
  • 10:$0.9190
  • 25:$0.8450
  • 50:$0.7720
  • 100:$0.6970
  • 250:$0.6370
  • 500:$0.5760
  • 1000:$0.4810
SI4162DY-T1-GE3.
DISTI # 15AC0297		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:19.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):6.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:5W,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$0.4000
  • 2500:$0.4000
SI4162DY-T1-GE3
DISTI # R1082528		Vishay DaleTRANSITOR,SI4886DY
RoHS: Compliant		0
  • 5:$0.5900
  • 25:$0.5800
  • 100:$0.5600
  • 250:$0.5500
  • 500:$0.5400
SI4162DY-T1-GE3Vishay IntertechnologiesSingle N-Channel 30 V 0.0079 Ohms Surface Mount Power Mosfet - SOIC-8
RoHS: Compliant		20000Reel
  • 2500:$0.3000
SI4162DY-T1-GE3
DISTI # 781-SI4162DY-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
RoHS: Compliant		3606
  • 1:$0.9600
  • 10:$0.7660
  • 100:$0.5810
  • 500:$0.4800
  • 1000:$0.4570
  • 2500:$0.4000
SI4162DY-T1-GE3Vishay Siliconix 440
  • 9:$0.5625
  • 37:$0.3656
  • 138:$0.2109
SI4162DY-T1-GE3
DISTI # 7103323P		Vishay IntertechnologiesMOSFET N-CHANNEL 30V 13.6A SOIC8, RL1145
  • 25:£0.4440
  • 100:£0.4320
  • 250:£0.4240
  • 500:£0.3980
SI4162DY-T1-GE3Vishay Siliconix 352
  • 161:$0.2250
  • 34:$0.3750
  • 1:$0.7500
SI4162DY-T1-GE3
DISTI # SI4162DY-GE3		Vishay IntertechnologiesN-Ch 30V 19,3A 2,5W 0,0079R SO8
RoHS: Compliant		900
  • 50:€0.2630
  • 100:€0.2030
  • 500:€0.1730
  • 2500:€0.1675
SI4162DY-T1-GE3
DISTI # C1S806000592792		Vishay IntertechnologiesMOSFETs
RoHS: Not Compliant		30000
  • 2500:$0.3367
SI4162DY-T1-GE3
DISTI # C1S803600844751		Vishay IntertechnologiesMOSFETs
RoHS: Compliant		2500
  • 2500:$0.5200
SI4162DY-T1-GE3
DISTI # 1779240RL		Vishay IntertechnologiesMOSFET, N-CH, 30V, 19.3A, SO8
RoHS: Compliant		0
  • 1:$1.5300
  • 10:$1.2100
  • 100:$0.9200
  • 500:$0.7600
  • 1000:$0.6350
  • 2500:$0.6340
SI4162DY-T1-GE3
DISTI # 1779240		Vishay IntertechnologiesMOSFET, N-CH, 30V, 19.3A, SO8
RoHS: Compliant		5474
  • 1:$1.5300
  • 10:$1.2100
  • 100:$0.9200
  • 500:$0.7600
  • 1000:$0.6350
  • 2500:$0.6340
SI4162DY-T1-GE3
DISTI # 1779240		Vishay IntertechnologiesMOSFET, N-CH, 30V, 19.3A, SO8
RoHS: Compliant		5514
  • 5:£0.7280
  • 25:£0.4730
  • 100:£0.4610
  • 250:£0.4520
  • 500:£0.3870
SI4162DY-T1-GE3..
DISTI # 1840421		Vishay IntertechnologiesMOSFET,N CH,30V,19.3A,SO8
RoHS: Compliant		59
  • 1:£0.3250
  • 25:£0.3190
  • 100:£0.3140
  • 250:£0.3080
  • 500:£0.3020
SI4162DY-T1-GE3
DISTI # XSFP00000063462		Vishay Siliconix 
RoHS: Compliant		40380
  • 2500:$0.6000
  • 40380:$0.5455
SI4162DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
RoHS: Compliant		Americas - 2500
  • 2500:$0.2200
  • 5000:$0.2080
  • 10000:$0.2010
영상 부분 # 설명
SI4162DY-T1-GE3

Mfr.#: SI4162DY-T1-GE3

OMO.#: OMO-SI4162DY-T1-GE3

 MOSFET 30V Vds 20V Vgs SO-8
SI4162DY

Mfr.#: SI4162DY

OMO.#: OMO-SI4162DY-1190

 신규 및 오리지널
SI4162DY-T1-GE3

Mfr.#: SI4162DY-T1-GE3

OMO.#: OMO-SI4162DY-T1-GE3-VISHAY

 MOSFET N-CH 30V 19.3A 8-SOIC
SI4162DY-TI-GE3

Mfr.#: SI4162DY-TI-GE3

OMO.#: OMO-SI4162DY-TI-GE3-1190

 신규 및 오리지널
SI4162DY-T1-GE3-CUT TAPE

Mfr.#: SI4162DY-T1-GE3-CUT TAPE

OMO.#: OMO-SI4162DY-T1-GE3-CUT-TAPE-1190

 신규 및 오리지널
유효성
재고:
Available
주문 시:
2500
수량 입력:
SI4162DY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.25
US$0.25
10
US$0.24
US$2.40
100
US$0.23
US$22.70
500
US$0.21
US$107.20
1000
US$0.20
US$201.80
시작
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