SI8824EDB-T2-E1

Mfr. #:: SI8824EDB-T2-E1
제조사:: Vishay / Siliconix
설명:: MOSFET 20V Vds 5V Vgs MICRO FOOT 0.8 x 0.8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI8824EDB-T2-E1 데이터 시트
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HTML Datasheet:: SI8824EDB-T2-E1 Datasheet SI8824EDB-T2-E1 Datasheet (P4-P6)SI8824EDB-T2-E1 Datasheet (P7-P8)
ECAD Model:
추가 정보:: SI8824EDB-T2-E1 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: MicroFoot-4

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 20 V

Id - 연속 드레인 전류:: 2.9 A

Rds On - 드레인 소스 저항:: 60 mOhms

Vgs th - 게이트 소스 임계 전압:: 350 mV

Vgs - 게이트 소스 전압:: 5 V

Qg - 게이트 차지:: 6 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 900 mW

구성:: 하나의

채널 모드:: 상승

상표명:: TrenchFET

포장:: 릴

키:: 0.65 mm

길이:: 1.6 mm

시리즈:: SI8

트랜지스터 유형:: 1 N-Channel

너비:: 1.6 mm

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 11 S

가을 시간:: 10 ns

상품 유형:: MOSFET

상승 시간:: 20 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 17 ns

일반적인 켜기 지연 시간:: 5 ns

Tags: Si8824, Si882, Si88, SI8

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8824EDB-T2-E1 설명

***enic: 20V 2.1A 500mW 75m´Î@4.5V1A 800mV@250Ã×A N Channel XFBGA-4 MOSFETs ROHS

***ical: Trans MOSFET N-CH 20V 2.9A 4-Pin Micro Foot T/R

***i-Key: MOSFET N-CH 20V 2.1A MICROFOOT

***ark: MOSFET, N-CH, 20V, 2.9A, MICRO FOOT-4; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800mV RoHS Compliant: Yes

***ure Electronics: N-Channel 20 V 56 mOhm Surface Mount Enhancement Mode Mosfet - SOT-323

***ical: Trans MOSFET N-CH 20V 2.8A Automotive 3-Pin SOT-323 T/R

***nell: MOSFET, N-CH, 20V, SOT-323-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.8A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 430mW; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***Yang: Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOT-23 T/R - Tape and Reel

***emi: Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mΩ

***ment14 APAC: MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):70mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***p One Stop Global: Trans MOSFET N/P-CH 20V 3A/2.2A 6-Pin SuperSOT T/R

***ure Electronics: Dual N/P-Channel 20 V 70 mOhm Surface Mount PowerTrench Mosfet - SSOT-6

***r Electronics: Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***ment14 APAC: MOSFET, DUAL, NP, SMD, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

***(Formerly Allied Electronics): MOSFET, Power,N-Ch,VDSS 20V,RDS(ON) 0.045Ohm,ID 2.1A,TO-236 (SOT-23),PD 0.7W

***S.I.T. Europe - USA - Asia: Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:2.1A; Resistance, Rds On:0.06ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.95V; Case Style:SOT-23; Termination Type:SMD; Current, Id Max:2.1A; Current, Idm Pulse:10A; No. of Pins:3; Power Dissipation:0.7W; Power Output:0.7W; Power, Pd:0.7W; Power, Ptot:0.7W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 2.5V N Channel:0.115ohm; Resistance, Rds on @ Vgs = 4.5V N Channel:0.06ohm; Resistance, Rds on Max:0.06ohm; SMD Marking:2A; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Rds Measurement:4.5V; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Max:1.2V; Voltage, Vgs th Min:0.65V; Width, Tape:8mm

***ure Electronics: Single N-Channel 20 V 0.057 Ohms Surface Mount Power Mosfet - SOT-23

***enic: 20V 2.9A 57m´Î@4.5V3.6A 710mW 850mV@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ical: Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R

***ment14 APAC: N CHANNEL MOSFET, 20V, 2.9A, TO-236; TRA; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A;

***roFlash: Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: Mosfet, N Channel, 20V, 0.045Ohm, 2.6A, To-236, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:2.5V; Power Dissipation:710Mw Rohs Compliant: No

***emi: Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 2.7A, 80mΩ

***Yang: Transistor MOSFET Array Dual N-CH 20V 2.7A 6-Pin TSOT-23 T/R - Product that comes on tape, but is no

***enic: 20V 2.7A 80m¦¸@4.5V,2.7A 700mW 1.5V@250¦ÌA 2 N-Channel TSOT-23-6 MOSFETs ROHS

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.7A; On Resistance, Rds(on):0.08ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

SI8824EDB-T2-E1 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

부분 #	제조	설명	재고	가격
SI8824EDB-T2-E1 DISTI # V72:2272_14141675	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET	5990	3000:$0.1062 1000:$0.1126 500:$0.1596 250:$0.1945 100:$0.1986 25:$0.2916 10:$0.3239 1:$0.4598
SI8824EDB-T2-E1 DISTI # V36:1790_14141675	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET	0	6000000:$0.0952 3000000:$0.0953 600000:$0.1046 60000:$0.1187 6000:$0.1209
SI8824EDB-T2-E1 DISTI # SI8824EDB-T2-E1CT-ND	Vishay Siliconix	MOSFET N-CH 20V 2.1A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	24728In Stock	1000:$0.1359 500:$0.1812 100:$0.2416 10:$0.3550 1:$0.4400
SI8824EDB-T2-E1 DISTI # SI8824EDB-T2-E1DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 2.1A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	24728In Stock	1000:$0.1359 500:$0.1812 100:$0.2416 10:$0.3550 1:$0.4400
SI8824EDB-T2-E1 DISTI # SI8824EDB-T2-E1TR-ND	Vishay Siliconix	MOSFET N-CH 20V 2.1A MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	24000In Stock	75000:$0.0938 30000:$0.0975 15000:$0.1063 6000:$0.1136 3000:$0.1209
SI8824EDB-T2-E1 DISTI # 27608806	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET	5990	3000:$0.1062 1000:$0.1126 500:$0.1596 250:$0.1945 100:$0.1986 71:$0.2916
SI8824EDB-T2-E1 DISTI # SI8824EDB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 4-Pin MICRO FOOT T/R (Alt: SI8824EDB-T2-E1) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1329 18000:€0.1429 12000:€0.1549 6000:€0.1799 3000:€0.2639
SI8824EDB-T2-E1 DISTI # SI8824EDB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 4-Pin MICRO FOOT T/R - Tape and Reel (Alt: SI8824EDB-T2-E1) RoHS: Not Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.0889 30000:$0.0909 18000:$0.0939 12000:$0.0979 6000:$0.1009
SI8824EDB-T2-E1 DISTI # 49Y3696	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.9A 4-Pin MICRO FOOT T/R - Product that comes on tape, but is not reeled (Alt: 49Y3696) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.1580
SI8824EDB-T2-E1 DISTI # 49Y3696	Vishay Intertechnologies	MOSFET, N-CH, 20V, 2.9A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV RoHS Compliant: Yes	0	1000:$0.1270 500:$0.1700 250:$0.1900 100:$0.2110 50:$0.2620 25:$0.3130 1:$0.4550
SI8824EDB-T2-E1 DISTI # 49Y3697	Vishay Intertechnologies	MOSFET, N-CH, 20V, 2.9A, MICRO FOOT-4,Transistor Polarity:N Channel,Continuous Drain Current Id:2.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.06ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV RoHS Compliant: Yes	0	50000:$0.0900 30000:$0.1000 20000:$0.1080 10000:$0.1210 5000:$0.1390 1:$0.1470
SI8824EDB-T2-E1 DISTI # 78-SI8824EDB-T2-E1	Vishay Intertechnologies	MOSFET 20V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant	15697	1:$0.4500 10:$0.3100 100:$0.2090 500:$0.1680 1000:$0.1260 3000:$0.1160 6000:$0.1090 9000:$0.1020 24000:$0.0930
SI8824EDB-T2-E1 DISTI # 1807330	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET, RL	6000	3000:£0.0930
SI8824EDBT2E1	Vishay Intertechnologies	RoHS: Compliant	3000
SI8824EDB-T2-E1 DISTI # 2484054	Vishay Intertechnologies	MOSFET, N-CH, 20V, 2.9A, MICRO FOOT-4 RoHS: Compliant	0	1000:$0.2050 500:$0.2730 100:$0.3650 10:$0.5350 1:$0.6600
SI8824EDB-T2-E1 DISTI # 2484054	Vishay Intertechnologies	MOSFET, N-CH, 20V, 2.9A, MICRO FOOT-4 RoHS: Compliant	10	250:£0.2030 100:£0.2240 50:£0.2790 25:£0.3320 1:£0.4930
SI8824EDB-T2-E1	Vishay Intertechnologies	MOSFET 20V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant	Americas -

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	Mfr.#: AC0402KRX7R7BB104 OMO.#: OMO-AC0402KRX7R7BB104-YAGEO	Cap Ceramic 0.1uF 16V X7R 10% SMD 0402 125C Automotive T/R
	Mfr.#: DA14585-00000AT2 OMO.#: OMO-DA14585-00000AT2-DIALOG-SEMICONDUCTOR	IC RF TXRX+MCU BLUETOOTH 40VFQFN
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SI8824EDB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes