TGF2060

Mfr. #:: TGF2060
제조사:: Qorvo
설명:: RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGF2060 데이터 시트
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ECAD Model:
추가 정보:: TGF2060 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: pHEMT

기술:: GaAs

얻다:: 12 dB

Vds - 드레인 소스 항복 전압:: 8 V

Vgs - 게이트 소스 항복 전압:: - 3 V

Id - 연속 드레인 전류:: 194 mA

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 2.1 W

장착 스타일:: SMD/SMT

포장:: 젤팩

구성:: 하나의

동작 주파수:: 20 GHz

작동 온도 범위:: - 65 C to + 150 C

제품:: RF JFET

시리즈:: TGF

유형:: GaAs pHEMT

상표:: 코르보

순방향 트랜스컨덕턴스 - 최소:: 232 mS

NF - 노이즈 피겨:: 1.4 dB

P1dB - 압축점:: 28 dBm

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 100

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1098619

Tags: TGF20, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2060 설명

***W: Transistor, DC- 20 GHz, 28 dBm, 12 dB, 1.4 dB NF, 8V, DIE

TGF2060 추가 정보

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

TGF2040/60 Discrete GaAs pHEMTs: Qorvo TGF2040 400µm Discrete GaAs pHEMT and TGF2060 600µm Discrete GaAs pHEMT operate from DC to 20GHz and are designed to optimize microwave power and efficiency at high drain bias operating conditions. TGF2040 pHEMT typically provides 26dBm of output power at P1dB with gain of 13dB and 55% power-added efficiency at 1dB compression while TGF2060 typically provides 28dBm of output power at P1dB with gain of 12dB and 55% power-added efficiency at 1dB compression. Qorvo TGF2040 and TGF2060 pHEMTs are appropriate for high efficiency applications. Theses transistors feature a protective overcoat layer with silicon nitride that provides a level of environmental robustness and scratch protection.Learn More

Market price

부분 #	제조	설명	재고	가격
TGF2060 DISTI # 772-TGF2060	Qorvo	RF JFET Transistors DC-20GHz NF 1.4dB Gain 12dB P1dB 28dBm RoHS: Compliant	100	100:$7.3300 300:$6.8500 500:$6.4000 1000:$5.9800

TGF2060

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes